公开(公告)号：US20230145077A1

公开(公告)日：2023-05-11

申请号：US17961995

申请日：2022-10-07

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Hyung-Jin CHOI ,  Sung Hoon HUR ,  Ji-Soo JANG ,  Jung Ho YOON ,  Seong Keun KIM ,  Hyun Cheol SONG ,  Chong Yun KANG ,  Ji-Won CHOI ,  Jin Sang KIM ,  Byung Chul Lee

IPC: C30B33/02 ,  H01L41/319 ,  C30B29/22 ,  C30B23/02

CPC classification number: C30B33/02 ,  H01L41/319 ,  C30B29/22 ,  C30B23/025 ,  H01L41/1871

Abstract: Disclosed is a method of manufacturing an epitaxy oxide thin film of enhanced crystalline quality, and an epitaxy oxide thin film manufactured thereby according to the present invention. With respect to the manufacturing method of the epitaxy oxide thin film, which epitaxially grows an orientation film with an oxide capable of being oriented to (001), (110), and (111) on a single crystal Si substrate, because time required for raising a temperature of the orientation film up to an annealing temperature at room temperature is extremely minimized, thermal stress arising from the large difference in thermal expansion coefficients between the substrate and the orientation film is controlled, so crystalline quality of the epitaxy oxide thin film can be enhanced. Moreover, various epitaxial functional oxides are integrated into the thin film of enhanced crystalline quality so that a novel electronic device can be embodied.