公开(公告)号：US20230005651A1

公开(公告)日：2023-01-05

申请号：US17525855

申请日：2021-11-12

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol Koo ,  Ki Hyuk Han ,  Dong Soo Han ,  Ouk Jae Lee ,  Byoung Chul Min ,  Hyung Jun Kim

IPC: H01F10/32 ,  H01L43/02

Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.

公开(公告)号：US12106879B2

公开(公告)日：2024-10-01

申请号：US17525855

申请日：2021-11-12

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol Koo ,  Ki Hyuk Han ,  Dong Soo Han ,  Ouk Jae Lee ,  Byoung Chul Min ,  Hyung Jun Kim

IPC: H01F10/32 ,  H10N50/80

CPC classification number: H01F10/329 ,  H10N50/80 ,  H01F10/3259

Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.