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1.发明授权公开(公告)号：US12106879B2
公开(公告)日：2024-10-01
申请号：US17525855
申请日：2021-11-12
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyun Cheol Koo , Ki Hyuk Han , Dong Soo Han , Ouk Jae Lee , Byoung Chul Min , Hyung Jun Kim
CPC classification number: H01F10/329 , H10N50/80 , H01F10/3259
Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.
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Patent Agency Ranking
公开(公告)号：US10998906B1
公开(公告)日：2021-05-04
申请号：US16774322
申请日：2020-01-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyoung Whan Kim , Dong Soo Han , Byoung Chul Min , Seok Min Hong , Hyun Cheol Koo , Hyung Jun Kim , Tae Eon Park , Ouk Jae Lee
Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.
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公开(公告)号：US20210126639A1
公开(公告)日：2021-04-29
申请号：US16774322
申请日：2020-01-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyoung Whan Kim , Dong Soo Han , Byoung Chul Min , Seok Min Hong , Hyun Cheol Koo , Hyung Jun Kim , Tae Eon Park , Ouk Jae Lee
Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.
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4.发明申请公开(公告)号：US20230005651A1
公开(公告)日：2023-01-05
申请号：US17525855
申请日：2021-11-12
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyun Cheol Koo , Ki Hyuk Han , Dong Soo Han , Ouk Jae Lee , Byoung Chul Min , Hyung Jun Kim
Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.
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公开(公告)号：US11322190B2
公开(公告)日：2022-05-03
申请号：US17127414
申请日：2020-12-18
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyoung Whan Kim , Dong Soo Han
Abstract: Disclosed is a magnetic device including a spin sinker. The magnetic device includes a storage medium, a spin sinker, and a read node. The storage medium receives an in-plane current from outside and generates a self-generated spin current that perpendicularly flows to a charge current, thereby controlling a data structure with the self-generated spin current. The spin sinker receives and attenuates the spin current. The read node measures a magnetoresistance of a data structure through the storage medium. The storage medium is made of a magnetic metal and the spin sinker is made of a magnetic insulating material.
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公开(公告)号：US20220036933A1
公开(公告)日：2022-02-03
申请号：US17127414
申请日：2020-12-18
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyoung Whan Kim , Dong Soo Han
Abstract: Disclosed is a magnetic device including a spin sinker. The magnetic device includes a storage medium, a spin sinker, and a read node. The storage medium receives an in-plane current from outside and generates a self-generated spin current that perpendicularly flows to a charge current, thereby controlling a data structure with the self-generated spin current. The spin sinker receives and attenuates the spin current. The read node measures a magnetoresistance of a data structure through the storage medium. The storage medium is made of a magnetic metal and the spin sinker is made of a magnetic insulating material.
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