公开(公告)号：US20240172436A1

公开(公告)日：2024-05-23

申请号：US17990333

申请日：2022-11-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young KWAK ,  Minkyung KIM ,  Suyoun LEE ,  Inho KIM ,  Jong-Keuk PARK ,  Jaewook KIM ,  Jongkil PARK ,  YeonJoo JEONG

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A flash memory device including multi-layered oxide for neuromorphic computing system is disclosed. According to embodiments, the flash memory device includes: a substrate; a channel layer disposed on the substrate; source/drain patterns disposed on both ends of the channel layer; a tunneling insulating layer disposed on the channel layer; a trapping layer disposed on the tunneling insulating layer and including a plurality of nitride layers; an intermediate barrier layer interposed within the trapping layer, and including an oxide layer, the oxide layer having a high dielectric constant; a blocking insulating layer disposed on the trapping layer; and an upper gate disposed on the blocking insulating layer.