公开(公告)号：US12091598B2

公开(公告)日：2024-09-17

申请号：US17881210

申请日：2022-08-04

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Gyuweon Hwang ,  Taehwan Park ,  Hyeri Yoo ,  Sangtae Kim ,  Nuri Oh ,  Seungki Shin ,  Namyoung Gwak

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/08 ,  C09K11/70 ,  C09K11/88 ,  H10K50/115 ,  H10K85/30

CPC classification number: C09K11/025 ,  C09K11/0883 ,  C09K11/70 ,  C09K11/883 ,  H10K50/115 ,  H10K85/321 ,  B82Y20/00 ,  B82Y40/00

Abstract: Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.

公开(公告)号：US10062699B1

公开(公告)日：2018-08-28

申请号：US15648770

申请日：2017-07-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun Kim ,  Jung Joon Pyeon ,  Cheol Jin Cho ,  Sangtae Kim ,  Doo Seok Jeong ,  Seung-Hyub Baek ,  Chong-Yun Kang ,  Ji-Won Choi ,  Jin-Sang Kim

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285 ,  H01L21/02

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).