公开(公告)号：US11705549B2

公开(公告)日：2023-07-18

申请号：US16952087

申请日：2020-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seung Hyub Baek ,  Seong Keun Kim ,  Hyun-Cheol Song ,  Sang Tae Kim ,  Hyun Seok Lee

IPC: H01M4/04 ,  H01M10/052 ,  H01M4/58 ,  H01M4/02

CPC classification number: H01M4/0404 ,  H01M4/58 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/027

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]:

SiNx  [Chemical Formula 1]



(wherein 0

公开(公告)号：US11837977B2

公开(公告)日：2023-12-05

申请号：US16953859

申请日：2020-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol Song ,  Chong Yun Kang ,  Jin Sang Kim ,  Ji-Won Choi ,  Seung Hyub Baek ,  Seong Keun Kim

IPC: H02N2/18 ,  H10N30/30 ,  H10N30/857

CPC classification number: H02N2/188 ,  H10N30/304 ,  H10N30/857

Abstract: Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

公开(公告)号：US10217928B2

公开(公告)日：2019-02-26

申请号：US15158158

申请日：2016-05-18

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Jin Sang Kim ,  Ji-Won Choi ,  Seung Hyub Baek ,  Seong Keun Kim ,  Woo-Suk Jung ,  Beomjin Kwon

IPC: H01L41/02 ,  H01L41/113

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2 ⁢ d 2 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) , y 2 = E 1 ⁢ d 1 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) ⁢ ⁢ and Equation ⁢ ⁢ 1 y 1 = E 2 ⁢ A 2 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) , y 2 = E 1 ⁢ A 1 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) . Equation ⁢ ⁢ 2

公开(公告)号：US11417516B2

公开(公告)日：2022-08-16

申请号：US16225432

申请日：2018-12-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  INSTITUTE FOR BASIC SCIENCE ,  ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun Kim ,  Woo Chui Lee ,  Sang Tae Kim ,  Hyun Cheol Song ,  Seung Hyub Baek ,  Ji Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Christopher W. Bielawski ,  Jung Hwan Yum ,  Eric S. Larsen

IPC: C01F3/02 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below, BexM1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

公开(公告)号：US10685762B2

公开(公告)日：2020-06-16

申请号：US15990824

申请日：2018-05-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seong Keun Kim ,  Seung Hyub Baek ,  Sang Tae Kim ,  Won Jae Lee ,  Narendra Singh Parmar ,  Young-Shin Lee

IPC: H01B1/22 ,  H01L29/20 ,  H01L21/288 ,  H01L21/285 ,  H01L29/45 ,  C08L29/04 ,  C08K3/22

Abstract: The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

公开(公告)号：US11733543B2

公开(公告)日：2023-08-22

申请号：US16044510

申请日：2018-07-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Yong-Won Song ,  Hyunjung Yi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seong Keun Kim ,  Seung Hyub Baek ,  Sang Tae Kim ,  Hyun Seok Lee

IPC: G02C7/04 ,  H01M4/64 ,  H01M10/0562 ,  H01M4/04 ,  H01M10/058 ,  H01M10/04 ,  G02C11/00 ,  H02J50/10 ,  H01M6/40

CPC classification number: G02C7/04 ,  G02C11/10 ,  H01M4/0426 ,  H01M4/64 ,  H01M10/0436 ,  H01M10/058 ,  H01M10/0562 ,  H01M6/40 ,  H01M2220/30 ,  H01M2300/0068 ,  H02J50/10

Abstract: Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

公开(公告)号：US11245345B2

公开(公告)日：2022-02-08

申请号：US16296218

申请日：2019-03-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol Song ,  Chong Yun Kang ,  Jin Sang Kim ,  Ji-won Choi ,  Seung Hyub Baek ,  Seong Keun Kim ,  Sang Tae Kim ,  Youn-hwan Shin

IPC: H02N2/18 ,  H01L41/04 ,  H01L41/113 ,  H01L41/053

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

公开(公告)号：US10062699B1

公开(公告)日：2018-08-28

申请号：US15648770

申请日：2017-07-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun Kim ,  Jung Joon Pyeon ,  Cheol Jin Cho ,  Sangtae Kim ,  Doo Seok Jeong ,  Seung-Hyub Baek ,  Chong-Yun Kang ,  Ji-Won Choi ,  Jin-Sang Kim

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285 ,  H01L21/02

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).