公开(公告)号：US09972742B2

公开(公告)日：2018-05-15

申请号：US14629940

申请日：2015-02-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei Oh ,  Byung-yong Wang

IPC: H01B1/02 ,  H01L31/18 ,  B82Y30/00 ,  C22C5/06 ,  C22C9/00 ,  C22C19/03 ,  B22F1/00 ,  B22F9/24 ,  H01L31/0224 ,  B22F3/10

CPC classification number: H01L31/1884 ,  B22F1/0025 ,  B22F3/10 ,  B22F9/24 ,  B82Y30/00 ,  C22C5/06 ,  C22C9/00 ,  C22C19/03 ,  H01B1/02 ,  H01B1/026 ,  H01L31/022466 ,  Y02E10/50

Abstract: Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

公开(公告)号：US10141082B2

公开(公告)日：2018-11-27

申请号：US14440230

申请日：2012-11-02

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei Oh ,  Se-Hoon Kim

IPC: H01B1/02 ,  B22F1/00 ,  B22F9/24 ,  C09D11/52 ,  B22F1/02 ,  B82Y40/00

Abstract: The present invention relates to oxidation resistant copper nanoparticles, and to a method for producing the same, which includes the steps of: preparing a first solution composed of a solvent, a polymer, and an organic acid; stirring the first solution to produce a first stirred solution; mixing the first stirred solution, a copper precursor, and a first reducing agent to produce a second reactant solution; mixing a second reducing agent with the second reactant solution to produce a third reactant solution; and collecting copper nanoparticles separated from the third reactant solution, which is a very simple process performing the reactions at a normal temperature under atmospheric conditions to produce copper nanoparticles, and an eco-friendly method firstly applying a watery solvent so as to achieve mass production of copper nanoparticles only by mixing solutions. In particular, the copper nanoparticles according to the present invention may have excellent oxidation resistant properties to prevent them from being oxidized for three months or more even when preserved at a normal temperature under atmospheric conditions.

公开(公告)号：US09236493B2

公开(公告)日：2016-01-12

申请号：US13659226

申请日：2012-10-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei Oh ,  Chil-Hyoung Lee ,  Won-Kook Choi ,  Jeon-Kook Lee ,  Young-Soo No

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2  [Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (μ) and rectification ratio as well as transparency.

Abstract translation: p型透明氧化物半导体包括以下化学式1所示的氧化锡化合物：Sn1-xMxO2 [化学式1]其中，在化学式1中，M为三价金属，X为0.01的实数 ~0.05。 由于优异的电气和光学性质，p型透明氧化物半导体可应用于诸如TFT-LCD和透明太阳能电池的有源半导体器件，并且在可见光透射率（T），载流子迁移率（μ）和 整改率以及透明度。