公开(公告)号：US20180342297A1

公开(公告)日：2018-11-29

申请号：US15968038

申请日：2018-05-01

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Gun Hwan KIM ,  Young Kuk LEE ,  Taek Mo CHUNG ,  Bo Keun PARK ,  Jeong Hwan HAN ,  Ji Woon CHOI

IPC: G11C13/00 ,  G11C11/56

Abstract: There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.