公开(公告)号：US20220344476A1

公开(公告)日：2022-10-27

申请号：US17849848

申请日：2022-06-27

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Philip Chan ,  Phillip Skahan ,  Nick Pfister ,  Christian Zollner ,  James W. Raring

IPC: H01L29/205 ,  H01L33/00 ,  H01L33/32 ,  H01L27/12 ,  H01L27/06 ,  H01L23/00 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683 ,  H01L27/088 ,  H01L27/15 ,  H01L29/66 ,  H01L33/06 ,  H01S5/02 ,  H01S5/227 ,  H01S5/343

Abstract: A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

公开(公告)号：US20240413614A1

公开(公告)日：2024-12-12

申请号：US18207044

申请日：2023-06-07

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Phillip Skahan ,  Christian Zollner

IPC: H01S5/227 ,  H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/343

Abstract: The present disclosure provides optical devices and methods for forming the optical devices. In some embodiments, the optical devices include active and passive regions. The active regions may include gallium and nitrogen containing epitaxial material, and the passive regions may include waveguide structures. The active and passive regions may be arranged on a carrier wafer in an end-to-end configuration. In other embodiments, the optical devices include laser devices or gain regions and dielectric waveguides. The laser devices or gain regions may include gallium and nitrogen containing epitaxial material.