公开(公告)号：US11283243B2

公开(公告)日：2022-03-22

申请号：US16488595

申请日：2018-02-27

申请人： KYOTO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

发明人： Susumu Noda ,  Yoshinori Tanaka ,  Menaka De Zoysa ,  Junichi Sonoda ,  Tomoaki Koizumi ,  Kei Emoto

IPC分类号： H01S5/02216 ,  H01S5/22 ,  H01S5/18 ,  H01S5/32 ,  H01L21/02 ,  H01S5/11 ,  H01S5/12 ,  H01S5/20

摘要： A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.

公开(公告)号：US11539187B2

公开(公告)日：2022-12-27

申请号：US16956512

申请日：2018-12-17

申请人： KYOTO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

发明人： Susumu Noda ,  Yoshinori Tanaka ,  Menaka De Zoysa ,  Tomoaki Koizumi ,  Kei Emoto

IPC分类号： H01S5/11 ,  H01S5/183 ,  H01S5/20 ,  H01S5/343 ,  H01S5/185

摘要： A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.