-
公开(公告)号：US07928419B2
公开(公告)日：2011-04-19
申请号：US11830213
申请日：2007-07-30
CPC分类号： H01L45/142 , C23C18/1204 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/1608
摘要： The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
摘要翻译： 本公开内容涉及包含非晶态硫族化物固体活性电解质层的固体电解质装置; 第一和第二金属层。 无定形硫族化物固体活性电解质层位于第一和第二金属层之间。 无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的， 将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。 本公开还涉及制造固体电解质器件的方法。
-
公开(公告)号：US20080314739A1
公开(公告)日：2008-12-25
申请号：US11830213
申请日：2007-07-30
IPC分类号： C25B9/06
CPC分类号： H01L45/142 , C23C18/1204 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/1608
摘要： The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
摘要翻译： 本公开内容涉及包含非晶态硫族化物固体活性电解质层的固体电解质装置; 第一和第二金属层。 无定形硫族化物固体活性电解质层位于第一和第二金属层之间。 无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的， 将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。 本公开还涉及制造固体电解质器件的方法。
-
公开(公告)号：US20080314738A1
公开(公告)日：2008-12-25
申请号：US11765142
申请日：2007-06-19
CPC分类号： H01L45/142 , C23C18/1204 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/1608
摘要： The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
摘要翻译： 本公开内容涉及包含非晶态硫族化物固体活性电解质层的固体电解质装置; 第一和第二金属层。 无定形硫族化物固体活性电解质层位于第一和第二金属层之间。 无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的， 将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。 本公开还涉及制造固体电解质器件的方法。
-
4.发明授权公开(公告)号：US10147604B2
公开(公告)日：2018-12-04
申请号：US12718039
申请日：2010-03-05
申请人： David B. Mitzi , Teodor K. Todorov
发明人： David B. Mitzi , Teodor K. Todorov
IPC分类号： B05D3/02 , H01L21/02 , H01L31/032 , H01L31/0749
摘要： A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≤x≤1; 0≤y≤1; 0≤z≤1; −1≤q≤1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
-
公开(公告)号：US08053772B2
公开(公告)日：2011-11-08
申请号：US12549297
申请日：2009-08-27
申请人： David B. Mitzi , Matthew W. Copel
发明人： David B. Mitzi , Matthew W. Copel
IPC分类号： H01L29/04
CPC分类号： C23C18/1295 , C23C18/1204 , C23C18/1225 , C23C18/14 , H01L29/66742 , H01L29/78681 , Y10T428/25 , Y10T428/30 , Y10T428/31507 , Y10T428/31678
摘要： A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
摘要翻译： 一种沉积金属硫族化物膜的方法，包括以下步骤：使金属硫族化物的分离的肼鎓前体和其中具有增溶添加剂的溶剂接触以形成其络合物溶液; 将复合物的溶液施加到基底上以在基底上产生溶液的涂层; 从涂层中除去溶剂以在基材上产生复合物的膜; 然后使复合物的膜退火，以在衬底上产生金属硫族化物膜。 还提供了制备金属硫族化物的分离的肼鎓前体的方法以及使用金属硫属元素作为沟道层的薄膜场效应晶体管器件。
-
公开(公告)号：US20110240932A1
公开(公告)日：2011-10-06
申请号：US13112356
申请日：2011-05-20
申请人： David B. Mitzi , Matthew W. Copel
发明人： David B. Mitzi , Matthew W. Copel
IPC分类号： H01B1/00
CPC分类号： C23C18/1295 , C23C18/1204 , C23C18/1225 , C23C18/14 , H01L29/66742 , H01L29/78681 , Y10T428/25 , Y10T428/30 , Y10T428/31507 , Y10T428/31678
摘要： A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
摘要翻译： 一种沉积金属硫族化物膜的方法，包括以下步骤：使金属硫族化物的分离的肼鎓前体与其中具有增溶添加剂的溶剂接触以形成其络合物溶液; 将复合物的溶液施加到基底上以在基底上产生溶液的涂层; 从涂层中除去溶剂以在基材上产生复合物的膜; 然后使复合物的膜退火，以在衬底上产生金属硫族化物膜。 还提供了制备金属硫族化物的分离的肼鎓前体的方法以及使用金属硫属元素作为沟道层的薄膜场效应晶体管器件。
-
公开(公告)号：US20100041907A1
公开(公告)日：2010-02-18
申请号：US12549297
申请日：2009-08-27
申请人： David B. Mitzi , Matthew W. Copel
发明人： David B. Mitzi , Matthew W. Copel
CPC分类号： C23C18/1295 , C23C18/1204 , C23C18/1225 , C23C18/14 , H01L29/66742 , H01L29/78681 , Y10T428/25 , Y10T428/30 , Y10T428/31507 , Y10T428/31678
摘要： A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
-
公开(公告)号：US08802977B2
公开(公告)日：2014-08-12
申请号：US12118230
申请日：2008-05-09
申请人： Min Yuan , David B. Mitzi , Wei Liu
发明人： Min Yuan , David B. Mitzi , Wei Liu
IPC分类号： H01L31/0272
CPC分类号： H01L31/1884 , C23C18/08 , H01L31/0322 , H01L31/0392 , H01L31/03925 , H01L31/03928 , H01L31/1852 , Y02E10/541 , Y02E10/544 , Y10T428/268
摘要： Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0≦x≦1, and ranges therebetween; 0≦y≦0.2, and ranges therebetween; 0.001≦z≦0.02, and ranges therebetween; and 0≦w≦2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.
摘要翻译： 提供了用于提高光伏器件中的能量转换效率的技术。 在一个方面，提供由式（Ⅵ-yIn1-xGaxSbzSe2-wSw）表示的锑（Sb）掺杂的膜，其中：其中：0＆lt; lE; x＆nlE; 1; 0＆nlE; y＆nlE; 0.2，它们之间的范围; 0.001＆nlE; z＆nlE; 0.02，它们之间的范围; 和0＆nlE; w＆nlE; 2和它们之间的范围。 还提供了掺杂Sb掺杂CIGS膜的光电器件及其制造方法。
-
公开(公告)号：US08617915B2
公开(公告)日：2013-12-31
申请号：US13153381
申请日：2011-06-03
申请人： Supratik Guha , David B. Mitzi , Teodor K. Todorov , Kejia Wang
发明人： Supratik Guha , David B. Mitzi , Teodor K. Todorov , Kejia Wang
IPC分类号： H01L21/00
CPC分类号： H01L21/02491 , H01L21/02422 , H01L21/02568 , H01L21/02614 , H01L31/0326 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： In an annealing process, a Kesterite film is provided on a substrate. The Kesterite film and the substrate are generally planar, have an interface, and have a substrate exterior side and a Kesterite exterior side. An additional step includes locating the cap adjacent the Kesterite exterior side. A further step includes applying sufficient heat to the Kesterite film and the substrate for a sufficient time to anneal the Kesterite film. The annealing is carried out with the cap adjacent the Kesterite exterior side. In another aspect, the film is not limited to Kesterite, and the cap is employed without any precursor layer thereon. Solar cell manufacturing techniques employing the annealing techniques are also disclosed.
摘要翻译： 在退火工艺中，在基材上提供Kesterite薄膜。 Kesterite膜和基材通常是平面的，具有界面，并且具有基材外侧和Kesterite外侧。 另外的步骤包括将盖子定位在Kesterite外侧附近。 另外的步骤包括向Kesterite薄膜和基底施加足够的时间以使Kesterite薄膜退火足够的时间。 退火是在与Kesterite外侧相邻的盖上进行的。 另一方面，该膜不限于Kesterite，并且在其上没有任何前体层的情况下使用该盖。 还公开了采用退火技术的太阳能电池制造技术。
-
公开(公告)号：US08574953B2
公开(公告)日：2013-11-05
申请号：US13362862
申请日：2012-01-31
IPC分类号： H01L51/40
CPC分类号： H01L51/0003 , H01L51/0002 , H01L51/0025 , H01L51/0077 , H01L51/0512 , Y10T428/1471
摘要： The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
摘要翻译： 本发明提供一种制备熔融加工的有机 - 无机混合材料的方法，包括以下步骤：将固体有机 - 无机混合材料保持在高于熔点但低于有机 - 无机混合材料的分解温度的温度 足以形成均匀熔体的时间段，然后在足以产生熔融加工的有机 - 无机混合材料的条件下将均匀的熔体冷却至环境温度。
-
-
-
-
-
-
-
-
-
搜索结果
45 条记录 (耗时 0.032 秒)
