公开(公告)号：US5401676A

公开(公告)日：1995-03-28

申请号：US114134

申请日：1993-08-30

Applicant: Kang-ok Lee

Inventor： Kang-ok Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/44

CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2209/0226

Abstract: A method is disclosed for making a silicon emission emitter for use as electron sources for various display elements, light sources, high-speed switching devices, and micro-sensors. The method relates to the formation of a tip portion of an emitter and an electron range by using a silicide material having a high melting point and a low work function. The emitter tip and electron range formed by the silicide material is a predetermined distance away from an oxide film, therefore, the emission characteristic of the emitter is efficiently strengthened, and the leakage current is, thereby, reduced due to the prevention of the metallic contamination to the insulating layers.

Abstract translation: 公开了一种用于制造用作各种显示元件，光源，高速开关器件和微传感器的电子源的硅发射发射器的方法。 该方法涉及通过使用具有高熔点和低功函数的硅化物材料形成发射极的尖端部分和电子范围。 由硅化物材料形成的发射极尖端和电子范围距离氧化膜预定距离，因此，发射极的发射特性被有效地加强，并且由于防止金属污染而使漏电流减小 到绝缘层。

公开(公告)号：US5527200A

公开(公告)日：1996-06-18

申请号：US163818

申请日：1993-12-08

Applicant: Kang-ok Lee ,  Cheon-kyu Lee

Inventor： Kang-ok Lee ,  Cheon-kyu Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/46 ,  H01J9/12

CPC classification number: H01J1/3042 ,  H01J9/025

Abstract: There is disclosed a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process. The silicon field emission emitter in accordance with the embodiment of the present invention includes a silicon substrate of high density, an insulating layer on the silicon substrate of high density, a cavity formed in the insulating layer, an emitter formed with the silicon substrate of high density in a body in the cavity, and a gate electrode formed on the insulating layer. The insulating layer is made of the thermal oxide film having the thickness of 4000 angstroms and the gate electrode coats the emitter tip.

Abstract translation: 公开了一种硅场致发射体和制造具有良好电子特性和简化制作工艺的硅场致发射体的方法。 根据本发明的实施例的硅场发射发射器包括高密度的硅衬底，高密度的硅衬底上的绝缘层，在绝缘层中形成的腔，形成有高硅衬底的发射极 空腔中的体内的密度，以及形成在绝缘层上的栅电极。 绝缘层由厚度为4000埃的热氧化膜制成，栅电极覆盖发射极尖端。