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公开(公告)号:US20180051237A1
公开(公告)日:2018-02-22
申请号:US15510810
申请日:2015-10-30
发明人: Yasuyuki Seino
CPC分类号: C11D11/0047 , C11D3/0073 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/32 , C11D7/5022 , C23F1/14 , H01L21/02071 , H01L21/32138
摘要: To provide a composition for removing photoresist residue and/or polymer residue formed in a process for producing a semiconductor circuit element, and a removal method employing same. A composition for removing photoresist residue and/or polymer residue, the composition containing saccharin and water, and the pH being no greater than 9.7.
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公开(公告)号:US11091726B2
公开(公告)日:2021-08-17
申请号:US15510810
申请日:2015-10-30
发明人: Yasuyuki Seino
IPC分类号: C11D11/00 , H01L21/3213 , H01L21/02 , C11D3/00 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C23F1/14
摘要: To provide a composition for removing photoresist residue and/or polymer residue formed in a process for producing a semiconductor circuit element, and a removal method employing same. A composition for removing photoresist residue and/or polymer residue, the composition containing saccharin and water, and the pH being no greater than 9.7.
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