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公开(公告)号：US20090014658A1
公开(公告)日：2009-01-15
申请号：US11658516
申请日：2005-07-25
申请人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
发明人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
IPC分类号： G01T1/24
CPC分类号： H01L31/0232 , H01L27/14601 , H01L27/14623 , H01L27/148 , H01L31/02005
摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
摘要翻译： 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域产生横向电势（Phi（x））的摄摄门（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成对于给定的横向电势（Phi（x））的屏蔽层，入射光（In）不会撞击载流子不会在其上的部分 运送到集成门（IG）。
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公开(公告)号：US20110101241A1
公开(公告)日：2011-05-05
申请号：US12987669
申请日：2011-01-10
申请人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
发明人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
IPC分类号： G01N21/64
CPC分类号： H01L31/0232 , H01L27/14601 , H01L27/14623 , H01L27/148 , H01L31/02005
摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
摘要翻译： 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的摄像机（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门（IG）。
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公开(公告)号：US07897928B2
公开(公告)日：2011-03-01
申请号：US11658516
申请日：2005-07-25
申请人： Rolf Kaufmann , Thierry Oggier , Simon Neukom , Michael Lehmann
发明人： Rolf Kaufmann , Thierry Oggier , Simon Neukom , Michael Lehmann
IPC分类号： G01T1/24 , H01L27/148
CPC分类号： H01L31/0232 , H01L27/14601 , H01L27/14623 , H01L27/148 , H01L31/02005
摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
摘要翻译： 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的照相门（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门（IG）。
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公开(公告)号：US07671671B2
公开(公告)日：2010-03-02
申请号：US12090433
申请日：2006-10-05
IPC分类号： G01R25/00 , H03D13/00 , H03K17/693
CPC分类号： H03D7/00
摘要： A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1, IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).
摘要翻译： 公开了半导体技术中的解调装置（1）。 装置（1）能够解调注入的调制电流。 设备（1）包括输入节点（IN1），采样级（DG1，IG1，GS1，IG2，DG2）和至少两个输出节点（D1，D2）。 采样级DG1，IG1，GS1，IG2，DG2）包括用于将调制的充电电流信号从输入节点（IN1）传送到分配的输出节点（D1，D2）之一的传送装置（GL，GM，GR） 到调制周期内的相应时间间隔。 在标准半导体技术中，小尺寸和再现设备（1）的能力使得设备（1）的成本有效的集成成为可能。
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公开(公告)号：US20080247033A1
公开(公告)日：2008-10-09
申请号：US12090433
申请日：2006-10-05
CPC分类号： H03D7/00
摘要： A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1 IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).
摘要翻译： 公开了半导体技术中的解调装置（1）。 装置（1）能够解调注入的调制电流。 装置（1）包括输入节点（IN 1），采样级（DG 1，IG 1，GS 1 IG 2，DG 2）和至少两个输出节点（D 1，D 2）。 采样级DG 1，IG 1，GS 1，IG 2，DG 2）包括用于将调制的充电电流信号从输入节点（IN 1）传送到输出节点之一的传送装置（GL，GM，GR） （D 1，D 2）分配给调制周期内的各个时间间隔。 在标准半导体技术中，小尺寸和再现设备（1）的能力使得设备（1）的成本有效的集成成为可能。
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公开(公告)号：US20070034779A1
公开(公告)日：2007-02-15
申请号：US11503524
申请日：2006-08-11
IPC分类号： H01L27/00
CPC分类号： H01L31/02024 , G01J3/2803 , H01L27/14603
摘要： The pixel (1) for use in an image sensor comprises a plurality of small-sized radiation-sensitive elements (2.1-2.9) for converting incident radiation into electric signals, the radiation-sensitive elements (2.1-2.9) being properly interconnected to form a larger radiation-sensitive area. The pixel (1) further comprises a plurality of storage elements (3A-3D) for storing the electric signals. The pixel further comprises transfer means for transferring the electric signals from the radiation-sensitive elements (2.1-2.9) to any selected one of the storage elements (3A-3D). The pixel (1) exhibits a high optical sensitivity and a high demodulation speed, and is especially suited for distance-measuring sensors based on the time-of-flight (TOF) principle or interferometry.
摘要翻译： 用于图像传感器的像素（1）包括用于将入射辐射转换成电信号的多个小尺寸的辐射敏感元件（2.1-2.9），所述辐射敏感元件（2.1-2.9）被正确互连以形成 更大的辐射敏感区域。 像素（1）还包括用于存储电信号的多个存储元件（3A-3D）。 像素还包括用于将来自辐射敏感元件（2.1-2.9）的电信号传送到存储元件（3A-3D）中的任何选定的一个的传送装置。 像素（1）具有高的光学灵敏度和高的解调速度，并且特别适用于基于飞行时间（TOF）原理或干涉测量的距离测量传感器。
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公开(公告)号：US20090021617A1
公开(公告)日：2009-01-22
申请号：US12175091
申请日：2008-07-17
IPC分类号： H04N5/335
CPC分类号： G01S17/89
摘要： An integrated sensor chip comprises at least one pixel. The at least one pixel comprises: one or several integration regions for receiving and storing photogenerated charges; a modulation region that moves the photogenerated charges to be stored in the at least two integration regions; and sense nodes, in which each of the sense nodes is associated with one of the integration regions, into which the photogenerated charges are moved from the integration regions during a readout stage. The chip comprises: at least one function generator for generating a time-varying function that is applied to the integration regions during the readout cycle to move the photogenerated changes to the sense nodes; a counter generates a count during the generation of the time-varying function; and registers, in which each of the registers is associated with one of the sense nodes during read out, for storing digital values; wherein the registers store the count in response to the associated sense node receiving photogenerated charges from the associated integration regions.
摘要翻译： 集成传感器芯片包括至少一个像素。 所述至少一个像素包括：用于接收和存储光生电荷的一个或几个积分区域; 调制区域，其移动要存储在所述至少两个积分区域中的光生电荷; 以及感测节点，其中每个感测节点与所述积分区域之一相关联，所述积分区域在读出阶段期间从所述积分区域移动所述光生电荷。 该芯片包括：至少一个功能发生器，用于产生在读出周期期间应用于积分区域的时变功能，以将光生变化移动到感测节点; 在产生时变功能期间，计数器产生计数; 和寄存器，其中每个寄存器在读出期间与感测节点之一相关联，用于存储数字值; 其中所述寄存器响应于所述相关联的感测节点从相关联的积分区域接收光生电荷而存储所述计数。
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8.发明授权公开(公告)号：US09698196B2
公开(公告)日：2017-07-04
申请号：US12856701
申请日：2010-08-16
IPC分类号： H01L31/08 , H01L27/144 , H01L27/148
CPC分类号： H01L27/14812 , H01L27/14806
摘要： A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected.
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9.发明申请Demodulation Pixel Incorporating Majority Carrier Current, Buried Channel and High-Low Junction 有权解调像素结合多数载波电流，埋地通道和高低端公开(公告)号：US20110089471A1
公开(公告)日：2011-04-21
申请号：US12856701
申请日：2010-08-16
IPC分类号： H01L31/08
CPC分类号： H01L27/14812 , H01L27/14806
摘要： A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected.
摘要翻译： 解调像素通过利用硅中的电荷传输的两种效应来提高电荷传输速度和灵敏度，以便实现前述的优化。 第一种是基于CCD门原理的传输方法。 然而，这不仅限于CCD技术，而且还可以在CMOS技术中实现。 在速度，灵敏度和低陷阱噪声方面，表面甚至靠近表面的掩埋通道中的电荷传输都是高效的。 此外，通过激活流过衬底的多数载流子电流，在耗尽的CCD通道之下产生另一个漂移场。 该漂移场深深地位于基板中，作为深色光电子 - 空穴对的有效分离器。 因此，另外大量少数载体被高速运送到扩散节点并进行检测。
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公开(公告)号：US08754939B2
公开(公告)日：2014-06-17
申请号：US12942598
申请日：2010-11-09
CPC分类号： H04N5/37452
摘要： A demodulation structure for a n-tap pixel, mainly for 3D time-of-flight (TOF) applications uses a 2-stage switch structure for demodulating a modulated electromagnetic wave. An almost arbitrary number of storage sites per pixel can be implemented enabling an almost arbitrary number of samplings captured during one exposure. It also provides the option to demodulate and integrate different phasing samples according to the different modulation frequencies within the same exposure.
摘要翻译： 主要用于3D飞行时间（TOF）应用的n抽头像素的解调结构使用2级开关结构来解调调制的电磁波。 可以实现每像素几乎任意数量的存储位置，使得能够在一次曝光期间捕获几乎任意数量的采样。 它还提供了在相同曝光中根据不同调制频率对不同定相样本进行解调和集成的选项。
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