公开(公告)号：US20090302474A1

公开(公告)日：2009-12-10

申请号：US12583108

申请日：2009-08-13

申请人： Katayun Barmak ,  Hyungjun Kim ,  Ismail C. Noyan ,  Stephen M. Rossnagel

发明人： Katayun Barmak ,  Hyungjun Kim ,  Ismail C. Noyan ,  Stephen M. Rossnagel

IPC分类号： H01L23/532

CPC分类号： H01L21/76846 ,  H01L23/53238

摘要： The present invention relates to a very thin multilayer diffusion barrier for a semiconductor device and fabrication method thereof. The multilayer diffusion barrier according to the present invention is fabricated by forming a very thin, multilayer diffusion barrier composed of even thinner sub-layers, where the sub-layers are only a few atoms thick. The present invention provides a diffusion barrier layer for a semiconductor device which is in a substantially amorphous state and thermodynamically stable, even at high temperatures.

摘要翻译： 本发明涉及一种用于半导体器件的非常薄的多层扩散阻挡层及其制造方法。 根据本发明的多层扩散阻挡层通过形成由更薄的子层组成的非常薄的多层扩散阻挡层来制造，其中子层仅为几个原子厚。 本发明提供一种用于半导体器件的扩散阻挡层，该扩散阻挡层处于基本非晶态并且在高温下具有热力学稳定性。

公开(公告)号：US20050070097A1

公开(公告)日：2005-03-31

申请号：US10674853

申请日：2003-09-29

申请人： Katayun Barmak ,  Hyungjun Kim ,  Ismail Noyan ,  Stephen Rossnagel

发明人： Katayun Barmak ,  Hyungjun Kim ,  Ismail Noyan ,  Stephen Rossnagel

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76846 ,  H01L23/53238

摘要： The present invention relates to a very thin multilayer diffusion barrier for a semiconductor device and fabrication method thereof. The multilayer diffusion barrier according to the present invention is fabricated by forming a very thin, multilayer diffusion barrier composed of even thinner sub-layers, where the sub-layers are only a few atoms thick. The present invention provides a diffusion barrier layer for a semiconductor device which is in a substantially amorphous state and thermodynamically stable, even at high temperatures.

摘要翻译： 本发明涉及一种用于半导体器件的非常薄的多层扩散阻挡层及其制造方法。 根据本发明的多层扩散阻挡层通过形成由更薄的子层组成的非常薄的多层扩散阻挡层来制造，其中子层仅为几个原子厚。 本发明提供一种用于半导体器件的扩散阻挡层，该扩散阻挡层处于基本非晶态并且在高温下具有热力学稳定性。

公开(公告)号：US20140210581A1

公开(公告)日：2014-07-31

申请号：US14232830

申请日：2012-07-16

申请人： Laura H. Lewis ,  Jeffrey E. Shield ,  Katayun Barmak

发明人： Laura H. Lewis ,  Jeffrey E. Shield ,  Katayun Barmak

IPC分类号： H01F1/01 ,  H01F41/02

CPC分类号： H01F1/01 ,  B22F1/0018 ,  B22F2009/0812 ,  B22F2998/10 ,  C22C1/0433 ,  C22C19/03 ,  C22C30/00 ,  C22C33/02 ,  C22C38/08 ,  C22C2202/02 ,  H01F1/047 ,  H01F1/068 ,  H01F41/0253 ,  H01F41/0266 ,  C22C1/1036 ,  B22F9/04 ,  B22F3/02

摘要： The invention provides rare earth-free permanent magnetic materials and methods of making them. The materials can be used to produce magnetic structures for use in a wide variety of commercial applications, such as motors, generators, and other electromechanical and electronic devices. Magnets fabricated using the materials can be substituted for magnets requiring rare earth elements that are costly and in limited supply. The invention provides two different types of magnetic materials. The first type is based on an iron-nickel alloy that is doped with one or more doping elements to promote the formation of L10 crystal structure. The second type is a nanocomposite particle containing magnetically hard and soft phases that interact to form an exchange spring magnetic material. The hard phase contains Fe or FeCo, and the soft phase contains AlMnC.

摘要翻译： 本发明提供无稀土永磁材料及其制造方法。 这些材料可用于生产用于各种商业应用中的磁性结构，例如马达，发电机和其它机电和电子设备。 使用这些材料制造的磁体可以代替需要稀土元素的磁体，其成本高且供应有限。 本发明提供两种不同类型的磁性材料。 第一种类型是基于掺杂有一种或多种掺杂元素以促进L10晶体结构形成的铁镍合金。 第二种类型是纳米复合粒子，其含有相互作用以形成交换弹簧磁性材料的磁性硬和软相。 硬相含有Fe或FeCo，软相含有AlMnC。

公开(公告)号：US06846734B2

公开(公告)日：2005-01-25

申请号：US10300165

申请日：2002-11-20

申请人： Ricky Amos ,  Katayun Barmak ,  Diane C. Boyd ,  Cyril Cabral, Jr. ,  Meikei Leong ,  Thomas S. Kanarsky ,  Jakub Tadeusz Kedzierski

发明人： Ricky Amos ,  Katayun Barmak ,  Diane C. Boyd ,  Cyril Cabral, Jr. ,  Meikei Leong ,  Thomas S. Kanarsky ,  Jakub Tadeusz Kedzierski

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/823835 ,  H01L21/28097 ,  H01L21/823842 ,  H01L21/84 ,  H01L29/66545

摘要： Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.

摘要翻译： 提供了形成具有易于调节的多阈值电压的互补金属氧化物半导体（CMOS）器件的方法。 提供了用金属双层（代表本发明的第一种方法）或金属合金（代表本发明的第二种方法）的总的水杨酸化。 还描述了通过本方法提供的具有多阈值电压的CMOS器件。

公开(公告)号：US10332661B2

公开(公告)日：2019-06-25

申请号：US14232830

申请日：2012-07-16

申请人： Laura H. Lewis ,  Katayun Barmak

发明人： Laura H. Lewis ,  Katayun Barmak

IPC分类号： H01F1/01 ,  H01F1/06 ,  H01F1/047 ,  C22C19/03 ,  C22C30/00 ,  C22C38/08 ,  H01F41/02 ,  C22C1/04 ,  C22C33/02 ,  B22F1/00 ,  B22F9/08

摘要： The invention provides rare earth-free permanent magnetic materials and methods of making them. The materials can be used to produce magnetic structures for use in a wide variety of commercial applications, such as motors, generators, and other electromechanical and electronic devices. Magnets fabricated using the materials can be substituted for magnets requiring rare earth elements that are costly and in limited supply. The invention provides two different types of magnetic materials. The first type is based on an iron-nickel alloy that is doped with one or more doping elements to promote the formation of L10 crystal structure. The second type is a nanocomposite particle containing magnetically hard and soft phases that interact to form an exchange spring magnetic material. The hard phase contains Fe or FeCo, and the soft phase contains AlMnC.

公开(公告)号：US20050106788A1

公开(公告)日：2005-05-19

申请号：US11001913

申请日：2004-12-02

申请人： Ricky Amos ,  Katayun Barmak ,  Diane Boyd ,  Cyril Cabral ,  Meikei Leong ,  Thomas Kanarsky ,  Jakub Kedzierski

发明人： Ricky Amos ,  Katayun Barmak ,  Diane Boyd ,  Cyril Cabral ,  Meikei Leong ,  Thomas Kanarsky ,  Jakub Kedzierski

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L31/0392

CPC分类号： H01L21/823835 ,  H01L21/28097 ,  H01L21/823842 ,  H01L21/84 ,  H01L29/66545

摘要： Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.