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    METHODS OF ETCHING CONDUCTIVE FEATURES, AND RELATED DEVICES AND SYSTEMS
    1.
    发明申请
    METHODS OF ETCHING CONDUCTIVE FEATURES, AND RELATED DEVICES AND SYSTEMS 审中-公开

    公开(公告)号：US20190335589A1

    公开(公告)日：2019-10-31

    申请号：US16507358

    申请日：2019-07-10

    申请人： Kateeva, Inc.

    发明人： Nava Shpaisman ,  Moshe Frenkel

    IPC分类号： H05K3/06 ,  H05K3/28

    摘要： A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

    Methods of etching conductive features, and related devices and systems
    2.
    发明授权
    Methods of etching conductive features, and related devices and systems 有权

    公开(公告)号：US10398034B2

    公开(公告)日：2019-08-27

    申请号：US15835116

    申请日：2017-12-07

    申请人： Kateeva, Inc.

    发明人： Nava Shpaisman ,  Moshe Frenkel

    IPC分类号： H05K3/06 ,  H05K3/28

    摘要： A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

    Methods of etching conductive features, and related devices and systems
    3.
    发明授权
    Methods of etching conductive features, and related devices and systems 有权

    公开(公告)号：US11425822B2

    公开(公告)日：2022-08-23

    申请号：US17301459

    申请日：2021-04-02

    申请人： Kateeva, Inc.

    发明人： Nava Shpaisman ,  Moshe Frenkel

    IPC分类号： H05K3/06 ,  H05K3/28

    摘要： A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

    Methods of etching conductive features, and related devices and systems
    4.
    发明授权
    Methods of etching conductive features, and related devices and systems 有权

    公开(公告)号：US11006528B2

    公开(公告)日：2021-05-11

    申请号：US16507358

    申请日：2019-07-10

    申请人： Kateeva, Inc.

    发明人： Nava Shpaisman ,  Moshe Frenkel

    IPC分类号： H05K3/00 ,  H05K3/06 ,  H05K3/28

    摘要： A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

    METHODS FOR PRODUCING AN ETCH RESIST PATTERN ON A METALLIC SURFACE
    5.
    发明申请
    METHODS FOR PRODUCING AN ETCH RESIST PATTERN ON A METALLIC SURFACE 有权

    公开(公告)号：US20210007225A1

    公开(公告)日：2021-01-07

    申请号：US16948597

    申请日：2020-09-24

    申请人： Kateeva, Inc.

    发明人： Nava Shpaisman ,  Moshe Frenkel

    IPC分类号： H05K3/06 ,  C09D11/101 ,  B41M5/00 ,  C23F1/02 ,  G03F7/20 ,  H01L51/00 ,  H05K3/00 ,  G03F1/50 ,  C09D11/30 ,  C23F1/00

    摘要： A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.

    Methods for producing an etch resist pattern on a metallic surface
    6.
    发明授权
    Methods for producing an etch resist pattern on a metallic surface 有权

    公开(公告)号：US10743420B2

    公开(公告)日：2020-08-11

    申请号：US15578300

    申请日：2016-06-02

    申请人： Kateeva, Inc.

    发明人： Moshe Frenkel ,  Nava Shpaisman

    IPC分类号： C09D11/54 ,  C23F1/02 ,  C23F1/14 ,  C23F1/16 ,  C23F1/18 ,  H05K3/06 ,  G03F7/00

    摘要： Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include applying a composition comprising a first reactive component onto a metallic surface to form a primer layer; and image-wise printing by a nonimpact printing process on the primer layer another composition comprising a second reactive component to produce an etch-resist mask, wherein when droplets of the second composition contact the primer layer, the reactive components undergo a chemical reaction so as to immobilize the droplets. The set may include a first liquid composition comprising a fixating reactive component and a second liquid composition comprising an etch-resist reactive component, wherein the fixating reactive component and the fixating reactive component are capable undergoing a chemical reaction to form a bi-component material that is insoluble in water and in an acidic etch solution.

    Methods for producing an etch resist pattern on a metallic surface
    8.
    发明授权
    Methods for producing an etch resist pattern on a metallic surface 有权

    公开(公告)号：US11606863B2

    公开(公告)日：2023-03-14

    申请号：US16912818

    申请日：2020-06-26

    申请人： Kateeva, Inc.

    发明人： Moshe Frenkel ,  Nava Shpaisman

    IPC分类号： H05K3/06 ,  C23F1/02 ,  C09D11/54 ,  C23F1/18 ,  G03F7/00

    摘要： Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

    Methods for producing an etch resist pattern on a metallic surface
    9.
    发明授权
    Methods for producing an etch resist pattern on a metallic surface 有权

    公开(公告)号：US11255018B2

    公开(公告)日：2022-02-22

    申请号：US16948597

    申请日：2020-09-24

    申请人： Kateeva, Inc.

    发明人： Nava Shpaisman ,  Moshe Frenkel

    IPC分类号： C23F1/02 ,  C09D11/101 ,  B41M5/00 ,  G03F7/20 ,  H01L51/00 ,  H05K3/00 ,  G03F1/50 ,  H05K3/06 ,  C09D11/30 ,  C23F1/00

    摘要： A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.