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96 条记录 (耗时 0.043 秒)

    Mask for photolithography
    1.
    发明授权
    Mask for photolithography 失效
    光刻掩模

    公开(公告)号：US5389474A

    公开(公告)日：1995-02-14

    申请号：US47056

    申请日：1993-04-12

    申请人： Katsuji Iguchi ,  Takashi Fukushima ,  Hiroki Tabuchi

    发明人： Katsuji Iguchi ,  Takashi Fukushima ,  Hiroki Tabuchi

    IPC分类号： G03F1/28 ,  G03F1/34 ,  G03F1/68 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

    CPC分类号： G03F1/29

    摘要： A mask for photolithography having a transparent substrate which allows light having a predetermined wavelength to pass therethrough; an opaque pattern provided on said substrate for inhibiting the light from passing therethrough; and a stepped portion provided adjacent to said opaque pattern on said substrate and having an inclined area, said stepped portion being transparent for allowing the light to pass therethrough, which can be used in a photolithographic system in fabrication of semiconductor devices and the like.

    摘要翻译： 一种用于光刻的掩模，具有允许具有预定波长的光通过的透明基板; 设置在所述基板上的用于抑制光通过的不透明图案; 以及设置在所述基板上与所述不透明图案相邻并且具有倾斜区域的阶梯部分，所述台阶部分是透明的，以允许光线通过，可用于制造半导体器件等的光刻系统中。

    Elastic member for ink jet
    3.
    发明授权
    Elastic member for ink jet 有权
    喷墨弹性件

    公开(公告)号：US08653173B2

    公开(公告)日：2014-02-18

    申请号：US13279056

    申请日：2011-10-21

    申请人： Takashi Fukushima ,  Akihiko Shimomura ,  Toshihiko Ujita ,  Kyosuke Nagaoka

    发明人： Takashi Fukushima ,  Akihiko Shimomura ,  Toshihiko Ujita ,  Kyosuke Nagaoka

    IPC分类号： C08K5/06

    CPC分类号： C08L23/02 ,  C08K5/06 ,  C08L53/02 ,  C08L53/025 ,  C08L2666/06 ,  C08L23/06 ,  C08L23/20 ,  C08L23/12 ,  C08L25/06

    摘要： Provided is an elastic member for ink jet, including a styrene-based thermoplastic elastomer and a thermoplastic resin, in which the elastic member further includes at least a nonionic surfactant having an ethylene oxide adduct, and the content of the nonionic surfactant is 0.1 to 5 mass % with respect to the styrene-based thermoplastic elastomer. The elastic member has sufficient releasability and high liquid-contact properties, which suppresses clogging of ejection orifices due to precipitation when eluted in ink.

    摘要翻译： 本发明提供一种喷墨用弹性体，包括苯乙烯类热塑性弹性体和热塑性树脂，弹性体还含有至少一种具有环氧乙烷加合物的非离子表面活性剂，非离子性表面活性剂的含量为0.1〜5 相对于苯乙烯类热塑性弹性体的质量％。 弹性构件具有足够的释放性和高的液体接触性，其抑制在油墨中洗脱时由于沉淀引起的喷射孔的堵塞。

    INK JET RECORDING HEAD
    7.
    发明申请
    INK JET RECORDING HEAD 有权
    喷墨记录头

    公开(公告)号：US20110267403A1

    公开(公告)日：2011-11-03

    申请号：US13182501

    申请日：2011-07-14

    申请人： Akihiko Shimomura ,  Toshihiko Ujita ,  Takashi Fukushima

    发明人： Akihiko Shimomura ,  Toshihiko Ujita ,  Takashi Fukushima

    IPC分类号： B41J2/135

    CPC分类号： B41J2/1603 ,  B41J2/1626 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1645 ,  B41J2002/14362 ,  B41J2202/03

    摘要： An ink jet recording head comprises a discharge port forming member that forms a discharge port used to discharge ink and a channel forming member that forms an ink channel communicating with the discharge port, at least either one of the channel forming member and the discharge port forming member comprising a substance having fluorine atoms and a rubber member composing a part of an ink passage continuous with the channel, the rubber member being cross-linked by an organic substance.

    摘要翻译： 喷墨记录头包括形成用于排出墨的排出口的排出口形成构件和形成与排出口连通的墨通道的流路形成构件，形成沟槽的构件和排出口中的至少一个形成 包括具有氟原子的物质的构件和构成与通道连续的油墨通道的一部分的橡胶构件，橡胶构件通过有机物质交联。

    Lower seal
    8.
    发明申请
    Lower seal 审中-公开
    下封

    公开(公告)号：US20110126475A1

    公开(公告)日：2011-06-02

    申请号：US12924340

    申请日：2010-09-24

    申请人： Takashi Fukushima ,  Koso Deguchi

    发明人： Takashi Fukushima ,  Koso Deguchi

    IPC分类号： E06B7/22

    CPC分类号： B60J10/80 ,  B60J10/36

    摘要： In a lower seal composed of a mounting part 5 to be mounted to a door panel 3 by a clip 4, a main lip 6 that is provided in a protruding state by bending from the upper end of the mounting part toward the inside of a vehicle and a sub-lip 22 that is integrally formed in the lower end of the mounting part, and that covers a drainage hole 12 by elastically making contact with a paint sealer 11 mounted to a hem 9; a folding part 23 with a V-shaped cross section is formed in the sub-lip 22 so as not to damage the lower seal, because the folding part 23 makes contact with the margin of the insertion groove 17 and is folded and the lower end of the sub-lip 22 is drawn from the hem 9 and tucked by the pedestal 16 when the door panel 3 after mounting of the lower seal is carried to a cradle for the next process.

    摘要翻译： 在由通过夹子4安装到门板3的安装部分5构成的下密封件中，通过从安装部件的上端朝向车辆内侧弯曲而设置成突出状态的主唇缘6 一体地形成在安装部的下端，并且通过弹性地与安装在下摆9上的涂料密封件11接触而覆盖排水孔12的副唇缘22; 因为折叠部23与插入槽17的边缘接触并被折叠，所以在副唇部22中形成具有V形横截面的折叠部23，以便不损坏下部密封，并且下端 当安装下部密封件的门板3被携带到用于下一个处理的支架时，子唇缘22从下摆9被拉出并被基座16折叠。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20100084685A1

    公开(公告)日：2010-04-08

    申请号：US12563334

    申请日：2009-09-21

    申请人： Hiroshi ITOKAWA ,  Takashi Fukushima

    发明人： Hiroshi ITOKAWA ,  Takashi Fukushima

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/1054 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66636

    摘要： A semiconductor device includes an SiGe film formed on part of a semiconductor substrate and including a channel region and at least part of source/drain extension regions between which the channel region is positioned, source/drain contact regions formed in a surface area of the semiconductor substrate and brought into contact with the pair of source/drain extension regions, a gate structure having a gate insulation film formed on the SiGe film and a gate electrode formed on the gate insulation film, first sidewall films formed on the SiGe film along side surfaces of the gate structure, second sidewall films formed on the SiGe film along the first sidewall films, third sidewall films formed on the source/drain contact regions along side surfaces of the SiGe film and the second sidewall films, and first silicide films formed on the source/drain contact regions.

    摘要翻译： 半导体器件包括形成在半导体衬底的一部分上的SiGe膜，其包括沟道区域和沟道区域位于其之间的源极/漏极延伸区域的至少一部分，在半导体衬底的表面区域中形成的源极/漏极接触区域 衬底并与一对源极/漏极延伸区域接触，具有形成在SiGe膜上的栅极绝缘膜的栅极结构和形成在栅极绝缘膜上的栅电极，沿着SiGe膜沿着侧表面形成的第一侧壁膜 栅极结构的第二侧壁膜沿着第一侧壁膜形成在SiGe膜上的第二侧壁膜，沿着SiGe膜和第二侧壁膜的侧表面形成在源极/漏极接触区域上的第三侧壁膜，以及形成在第一侧壁膜上的第一硅化物膜 源极/漏极接触区域。