公开(公告)号：US5650353A

公开(公告)日：1997-07-22

申请号：US561166

申请日：1995-11-21

申请人： Katsuo Yoshizawa ,  Tsutomu Sato ,  Kiyoshi Mitani ,  Masatake Katayama

发明人： Katsuo Yoshizawa ,  Tsutomu Sato ,  Kiyoshi Mitani ,  Masatake Katayama

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  Y02P80/30 ,  Y10S148/012 ,  Y10S148/135

摘要： SOI (silicon-on-insulator) substrates are efficiently produced by a method which comprises superposing and bonding at least three single crystal silicon wafers through the medium of a SiO.sub.2 film formed on the surface of each of the wafers and cutting the bonded wafers along planes perpendicular to the direction of superposition thereof. The cutting can be infallibly attained with high dimensional accuracy without entailing such adverse phenomena as the vibration of the blade of a cutting tool by providing at the portions destined to be cut the grooves for guiding the blade of the cutting tool in advance of the cutting work.

摘要翻译： 通过一种方法有效地制造SOI（绝缘体上硅）衬底，该方法包括通过形成在每个晶片的表面上的SiO 2膜的介质将至少三个单晶硅晶片叠加并结合，并沿着平面切割结合的晶片 垂直于其叠加方向。 可以以高尺寸精度实现切割，而不会产生诸如切割工具的刀片的振动的不利现象，因为在切割工具的前面提供用于引导切割工具的刀刃的凹槽的部分 。

公开(公告)号：US5918139A

公开(公告)日：1999-06-29

申请号：US14415

申请日：1998-01-27

申请人： Kiyoshi Mitani ,  Katsuo Yoshizawa

发明人： Kiyoshi Mitani ,  Katsuo Yoshizawa

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L27/12 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007

摘要： A method of manufacturing a bonding substrate is disclosed. An oxide film is formed on the surface of at least one of two semiconductor substrates, and the two substrates are brought into close contact with each other via the oxide film. The substrates are heat-treated in an oxidizing atmosphere in order to firmly join the substrates together. Subsequently, an unjoined portion at the periphery of a device-fabricating substrate is completely removed, and the thickness of the device-fabricating substrate is reduced to a desired thickness so as to yield a thin film. The surface of the thin film is then etched through vapor-phase etching in order to make the thickness of the thin film uniform. In the method, the oxide film on the unjoined portion of at least the support substrate is removed before the surface of the thin film is subjected to vapor-phase etching. The method prevents a groove from being formed in the surface of the unjoined portion (terrace portion) of the support substrate (base wafer) even when the surface of the thin film undergoes vapor phase etching.

摘要翻译： 公开了一种制造接合衬底的方法。 在两个半导体衬底中的至少一个的表面上形成氧化物膜，并且通过氧化膜使两个衬底彼此紧密接触。 将基板在氧化气氛中进行热处理，以将基板牢固地接合在一起。 随后，在器件制造衬底的周边处的未连接部分被完全去除，并且将器件制造衬底的厚度减小到期望的厚度以产生薄膜。 然后通过气相蚀刻对薄膜的表面进行蚀刻，以使薄膜的厚度均匀。 在该方法中，在对薄膜的表面进行气相蚀刻之前，去除至少支撑基板的未连接部分上的氧化膜。 即使当薄膜的表面进行气相蚀刻时，该方法也防止在支撑基板（基底晶片）的未连接部分（平台部分）的表面中形成凹槽。

公开(公告)号：US06534384B2

公开(公告)日：2003-03-18

申请号：US09324939

申请日：1999-06-03

申请人： Masatake Nakano ,  Katsuo Yoshizawa

发明人： Masatake Nakano ,  Katsuo Yoshizawa

IPC分类号： H01L2146

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  H01L21/76256

摘要： A method for manufacturing an SOI wafer. The method includes forming an oxide film on a surface of at least one silicon wafer of two silicon wafers. The method also includes bonding the silicon wafers through the oxide film at room temperature to form a room temperature bond end, one of the two silicon wafers being a bond wafer. The method further includes heat treating the wafers in an oxidizing atmosphere to form a heat treatment bond end. Thereafter, an outer periphery of the bond wafer is removed from an outer peripheral edge of the bond wafer up to a region between the room temperature bond end and the heat treatment bond end. The thickness of the bond wafer is reduced to form an SOI layer.

摘要翻译： 一种制造SOI晶片的方法。 该方法包括在两个硅晶片的至少一个硅晶片的表面上形成氧化膜。 该方法还包括在室温下将硅晶片粘合通过氧化膜以形成室温结合端，两个硅晶片之一是接合晶片。 该方法还包括在氧化气氛中热处理晶片以形成热处理粘结端。 此后，将接合晶片的外周从接合晶片的外周边缘去除至室温接合端与热处理接合端之间的区域。 接合晶片的厚度减小以形成SOI层。