公开(公告)号：US20130069193A1

公开(公告)日：2013-03-21

申请号：US13699964

申请日：2011-04-08

申请人： Katsushi Kishimoto ,  Masanori Mizuta

发明人： Katsushi Kishimoto ,  Masanori Mizuta

IPC分类号： H01L31/028 ,  H01L31/105

CPC分类号： H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： An intermediate layer for a stacked type photoelectric conversion device including an n-type silicon-based stacked body including an n-type crystalline silicon-based semiconductor layer and an n-type silicon-based composite layer, and a p-type silicon-based stacked body including a p-type crystalline silicon-based semiconductor layer and a p-type silicon-based composite layer, the n-type crystalline silicon-based semiconductor layer of the n-type silicon-based stacked body being in contact with the p-type crystalline silicon-based semiconductor layer of the p-type silicon-based stacked body, a stacked type photoelectric conversion device including the same, and a method for manufacturing a stacked type photoelectric conversion device.

摘要翻译： 一种用于层叠型光电转换装置的中间层，其包括n型硅基层叠体，其包括n型晶体硅基半导体层和n型硅基复合层，以及p型硅基 包括p型晶体硅基半导体层和p型硅基复合层的堆叠体，n型硅基层叠体的n型晶体硅基半导体层与p 型p型硅基层叠体的层叠型光电转换装置，以及叠层型光电转换装置的制造方法。