利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.032 秒)

    Bipolar transistor and manufacting method thereof
    1.
    发明授权
    Bipolar transistor and manufacting method thereof 失效
    双极晶体管及其制造方法

    公开(公告)号：US06482710B2

    公开(公告)日：2002-11-19

    申请号：US09811559

    申请日：2001-03-20

    申请人： Katsuya Oda ,  Eiji Ohue ,  Masao Kondo ,  Katsuyoshi Washio ,  Masamichi Tanabe ,  Hiromi Shimamoto

    发明人： Katsuya Oda ,  Eiji Ohue ,  Masao Kondo ,  Katsuyoshi Washio ,  Masamichi Tanabe ,  Hiromi Shimamoto

    IPC分类号： H01L21331

    CPC分类号： H01L29/66287 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

    摘要： A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.

    摘要翻译： 根据本发明的双极晶体管具有以下结构：由单晶Si-Ge构成的本征基极和基极引出电极通过高浓度掺杂的由多晶Si-Ge制成的连接基底连接，此外， 在本征基底之下的部分具有与集电体相同的导电类型，并且在外围部分中，在本征基极和集电极层之间设置具有与基底相同的导电类型的单晶Si-Ge层。 因此，同时实现本征基极与基极引出电极之间的基极的电阻的降低和集电极与基极之间的电容的减小，以及自对准双极晶体管，其中发射极和 集电极和基极之间的基极和电容分别小，功耗小，获得高速运行。

    Bipolar transistor and manufacturing method thereof
    2.
    发明授权
    Bipolar transistor and manufacturing method thereof 失效
    双极晶体管及其制造方法

    公开(公告)号：US06521974B1

    公开(公告)日：2003-02-18

    申请号：US09689800

    申请日：2000-10-13

    申请人： Katsuya Oda ,  Eiji Ohue ,  Masao Kondo ,  Katsuyoshi Washio ,  Masamichi Tanabe ,  Hiromi Shimamoto

    发明人： Katsuya Oda ,  Eiji Ohue ,  Masao Kondo ,  Katsuyoshi Washio ,  Masamichi Tanabe ,  Hiromi Shimamoto

    IPC分类号： H01L2970

    CPC分类号： H01L29/66287 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

    摘要： A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.

    摘要翻译： 根据本发明的双极晶体管具有以下结构：由单晶Si-Ge构成的本征基极和基极引出电极通过高浓度掺杂的由多晶Si-Ge制成的连接基底连接，此外， 在本征基底之下的部分具有与集电体相同的导电类型，并且在外围部分中，在本征基极和集电极层之间设置具有与基底相同的导电类型的单晶Si-Ge层。 因此，同时实现本征基极与基极引出电极之间的基极的电阻的降低和集电极与基极之间的电容的减小，以及自对准双极晶体管，其中发射极和 集电极和基极之间的基极和电容分别小，功耗小，获得高速运行。

    Heterojunction bipolar transistor
    5.
    发明授权
    Heterojunction bipolar transistor 失效
    异质结双极晶体管

    公开(公告)号：US5962880A

    公开(公告)日：1999-10-05

    申请号：US892673

    申请日：1997-07-14

    申请人： Katsuya Oda ,  Eiji Ohue ,  Takahiro Onai ,  Katsuyoshi Washio

    发明人： Katsuya Oda ,  Eiji Ohue ,  Takahiro Onai ,  Katsuyoshi Washio

    IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L29/737

    CPC分类号： H01L29/66242 ,  H01L29/1004 ,  H01L29/7378

    摘要： A self-aligned bipolar transistor which has a small base resistance and small emitter-base and collector-base capacitances and is operable at high speed is disclosed. This bipolar transistor is characterized in that a low concentration collector region made of single crystal Si--Ge is self-alignedly formed between an intrinsic base of single crystal Si--Ge and an intrinsic base, and that an extrinsic base electrode and an intrinsic base are connected only through a doped external base. With this arrangement, an energy barrier is not established at the collector base interface owing to the formation of the low concentration region of single crystal Si--Ge, so that the transit time of the carriers charged from the emitter is shortened. The connection between the intrinsic base and the extrinsic base electrode via the doped external base results in the reduction of the base resistance. In addition, the self-aligned formation of the emitter-base-collector leads to the reduction in capacitance between the emitter and the base and also between the collector and the base. Accordingly, a high-speed bipolar transistor can be realized and thus, circuits using the transistor are operable at high speed.

    摘要翻译： 公开了具有小的基极电阻和小的发射极基极和集电极基极电容并且可高速操作的自对准双极晶体管。 该双极型晶体管的特征在于，由单晶Si-Ge构成的低浓度集电极区域在单晶Si-Ge的本征基极和本征基极之间自对准地形成，而外部基极电极和固有基极为 仅通过掺杂的外部基极连接。 通过这种布置，由于形成单晶Si-Ge的低浓度区域，在集电极基极界面处没有形成能量势垒，从而缩短了从发射极充电的载流子的渡越时间。 通过掺杂的外部基极的本征基极和外部基极之间的连接导致基极电阻的降低。 此外，发射极 - 基极集电体的自对准形成导致发射极和基极之间以及集电极和基极之间的电容减小。 因此，可以实现高速双极晶体管，因此，使用晶体管的电路可以高速工作。

    Semiconductor device with reduced base resistance
    6.
    发明授权
    Semiconductor device with reduced base resistance 失效
    具有降低基极电阻的半导体器件

    公开(公告)号：US07521734B2

    公开(公告)日：2009-04-21

    申请号：US10855378

    申请日：2004-05-28

    申请人： Eiji Oue ,  Katsuyoshi Washio ,  Hiromi Shimamoto ,  Katsuya Oda ,  Makoto Miura

    发明人： Eiji Oue ,  Katsuyoshi Washio ,  Hiromi Shimamoto ,  Katsuya Oda ,  Makoto Miura

    IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/66287 ,  H01L29/7322

    摘要： A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor device is structured so that the emitter and extrinsic base are separated from each other by an insulator sidewall and the bottom faces of the insulator sidewall, and the emitter are approximately on the same plane. The extrinsic base electrode and the collector region are separated from each other by an insulator.

    摘要翻译： 提供双极晶体管，其中基极电阻和基极集电极电容都减小，并且能够以高截止频率工作。 半导体器件被构造成使得发射极和非本征基极通过绝缘体侧壁和绝缘体侧壁的底面彼此分离，并且发射极大致在同一平面上。 外部基极和集电极区域通过绝缘体彼此分离。

    Semiconductor device and method for manufacturing the same
    7.
    发明申请
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20050001238A1

    公开(公告)日：2005-01-06

    申请号：US10855378

    申请日：2004-05-28

    申请人： Eiji Oue ,  Katsuyoshi Washio ,  Hiromi Shimamoto ,  Katsuya Oda ,  Makoto Miura

    发明人： Eiji Oue ,  Katsuyoshi Washio ,  Hiromi Shimamoto ,  Katsuya Oda ,  Makoto Miura

    IPC分类号： H01L21/331 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328

    CPC分类号： H01L29/66287 ,  H01L29/7322

    摘要： A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor device is structured so that the emitter and extrinsic base are separated from each other by an insulator sidewall and the bottom faces of the insulator sidewall, and the emitter are approximately on the same plane. The extrinsic base electrode and the collector region are separated from each other by an insulator.

    摘要翻译： 提供双极晶体管，其中基极电阻和基极集电极电容都减小，并且能够以高截止频率工作。 半导体器件被构造成使得发射极和非本征基极通过绝缘体侧壁和绝缘体侧壁的底面彼此分离，并且发射极大致在同一平面上。 外部基极和集电极区域通过绝缘体彼此分离。

    Bipolar transistor
    8.
    发明授权
    Bipolar transistor 失效

    公开(公告)号：US06653715B2

    公开(公告)日：2003-11-25

    申请号：US10237674

    申请日：2002-09-10

    申请人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    发明人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    IPC分类号： H01L2782

    CPC分类号： H01L31/1105

    摘要： A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

    Bipolar transistor
    9.
    发明授权
    Bipolar transistor 失效

    公开(公告)号：US06469367B2

    公开(公告)日：2002-10-22

    申请号：US09983143

    申请日：2001-10-23

    申请人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    发明人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    IPC分类号： H01L27082

    CPC分类号： H01L31/1105

    摘要： A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

    Bipolar transistor
    10.
    发明授权
    Bipolar transistor 失效

    公开(公告)号：US06388307B1

    公开(公告)日：2002-05-14

    申请号：US09376352

    申请日：1999-08-18

    申请人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    发明人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    IPC分类号： H01L2782

    CPC分类号： H01L31/1105

    摘要： A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.