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    PIEZOELECTRIC DEVICE
    3.
    发明申请
    PIEZOELECTRIC DEVICE 有权
    压电器件

    公开(公告)号：US20140035439A1

    公开(公告)日：2014-02-06

    申请号：US13566468

    申请日：2012-08-03

    申请人： Katsuyuki KURACHI ,  Yasuhiro AIDA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

    发明人： Katsuyuki KURACHI ,  Yasuhiro AIDA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

    IPC分类号： H01L41/047

    CPC分类号： H01L41/0478 ,  B41J2/14233 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/313 ,  H01L41/316

    摘要： A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film.

    摘要翻译： 根据本发明的压电装置设置有第一电极膜，设置在第一电极膜上的第一非金属导电中间膜，设置在第一非金属导电中间膜上的压电膜，设置在第一非金属导电中间膜上的第二非金属导电中间膜 压电膜，以及设置在第二非金属导电中间膜上的第二电极膜。 第一非金属导电性中间膜的线膨胀系数比第一电极膜和压电膜的线膨胀系数大，第二非金属导电性中间膜的线膨胀系数比第二电极膜和压电膜的线膨胀系数大 。

    SOLAR CELL, AND METHOD FOR PRODUCING THE SOLAR CELL
    4.
    发明申请
    SOLAR CELL, AND METHOD FOR PRODUCING THE SOLAR CELL 有权
    太阳能电池和太阳能电池的制造方法

    公开(公告)号：US20100229951A1

    公开(公告)日：2010-09-16

    申请号：US12718528

    申请日：2010-03-05

    申请人： Yasuhiro AIDA ,  Masato SUSUKIDA

    发明人： Yasuhiro AIDA ,  Masato SUSUKIDA

    IPC分类号： H01L31/032 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

    摘要： A solar cell is provided as one capable of increasing the open voltage when compared with the conventional solar cells. A solar cell according to the present invention has a p-type semiconductor layer containing a group Ib element, a group IIIb element, and a group VIb element, and an n-type semiconductor layer containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer. A content of the group Ib element in the n-type semiconductor layer is from 15 to 21 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer, and a content of Zn in the n-type semiconductor layer is from 0.005 to 1.0 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer.

    摘要翻译： 提供太阳能电池作为与常规太阳能电池相比能够增加开路电压的太阳能电池。 根据本发明的太阳能电池具有含有Ib族元素，IIIb族元素和VIb族元素的p型半导体层，以及含有Ib族元素，IIIb族元素， VIb族元素，Zn形成在p型半导体层上。 n型半导体层中的Ib族元素的含量为15〜21at。 ％至n型半导体层中的Ib族元素，IIIb族元素，VIb族元素和Zn族的原子总数，n型半导体层中的Zn含量为0.005〜1.0 在。 ％至n型半导体层中的Ib族元素，IIIb族元素，VIb族元素和Zn的总原子数。

    METHOD OF MANUFACTURING SOLAR CELL
    5.
    发明申请
    METHOD OF MANUFACTURING SOLAR CELL 审中-公开
    制造太阳能电池的方法

    公开(公告)号：US20100210065A1

    公开(公告)日：2010-08-19

    申请号：US12702871

    申请日：2010-02-09

    申请人： Yasuhiro AIDA ,  Masato SUSUKIDA

    发明人： Yasuhiro AIDA ,  Masato SUSUKIDA

    IPC分类号： H01L21/363

    CPC分类号： H01L21/02568 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02631 ,  H01L31/02168 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method of manufacturing a solar cell is provided, which can enhance the carrier concentration, so as to increase the open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby raising the conversion efficiency. The method of manufacturing a solar cell in accordance with the present invention comprises a sputtering step of forming a layer containing Ib and IIIb group elements and Se on a substrate by sputtering with a target containing a Ib group element and a target containing a IIIb group element in an atmosphere containing Se; and a heat treatment step of heating the layer.

    摘要翻译： 提供一种制造太阳能电池的方法，其可以增强载流子浓度，从而提高开路电压，短路电流和填充因子（F.F.），从而提高转换效率。 根据本发明的太阳能电池的制造方法包括：溅射步骤，通过用含有Ib族元素的靶和含有IIIb族元素的靶在溅射中形成含有Ib和IIIb族元素的层和Se 在含有Se的气氛中 以及加热该层的热处理步骤。

    SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL
    6.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL 有权
    太阳能电池和制造太阳能电池的方法

    公开(公告)号：US20100206381A1

    公开(公告)日：2010-08-19

    申请号：US12704413

    申请日：2010-02-11

    申请人： Yasuhiro AIDA ,  Masato SUSUKIDA

    发明人： Yasuhiro AIDA ,  Masato SUSUKIDA

    IPC分类号： H01L31/04 ,  H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/18 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： A solar cell which can increase its open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby enhancing its conversion efficiency is provided. The solar cell of the present invention comprises a p-type semiconductor layer and an n-type semiconductor layer, formed on the p-type semiconductor layer, containing a compound expressed by the following chemical formula (1): ZnO1-x-ySxSey  (1) where x≧0, y>0, and 0.2

    摘要翻译： 提供了可以增加其开路电压，短路电流和填充因子（F.F.）的太阳能电池，从而提高其转换效率。 本发明的太阳能电池包括p型半导体层和n型半导体层，其形成在p型半导体层上，其含有由以下化学式（1）表示的化合物：ZnO1-x-ySxSey（ 1）其中x≥0，y> 0和0.2