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公开(公告)号：US20090134446A1
公开(公告)日：2009-05-28
申请号：US12275995
申请日：2008-11-21
申请人： Katsuyuki SEKINE , Yoshio OZAWA , Hiroaki TSUNODA
发明人： Katsuyuki SEKINE , Yoshio OZAWA , Hiroaki TSUNODA
IPC分类号： H01L29/788 , H01L29/68 , H01L29/66
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42336 , H01L29/511
摘要： A semiconductor device includes a tunnel insulating film formed on a semiconductor substrate, a floating gate electrode formed on the tunnel insulating film, an inter-electrode insulating film formed on the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein the inter-electrode insulating film includes a main insulating film and a plurality of nano-particles in the main insulating film.
摘要翻译： 半导体器件包括形成在半导体衬底上的隧道绝缘膜，形成在隧道绝缘膜上的浮栅电极，形成在浮栅电极上的电极间绝缘膜，以及形成在电极间绝缘层上的控制栅电极 膜，其中所述电极间绝缘膜包括主绝缘膜和所述主绝缘膜中的多个纳米颗粒。
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公开(公告)号：US20080305612A1
公开(公告)日：2008-12-11
申请号：US12131406
申请日：2008-06-02
IPC分类号： H01L21/76
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor device such as a flash memory includes a semiconductor substrate, two gate insulating films formed on the substrate so as to have a first film thickness and a second film thickness smaller than the first film thickness respectively, and a polycrystalline silicon film formed on the gate insulating films so that parts of the polycrystalline silicon film on the respective gate insulating films are on a level with each other and serving as a gate electrode. The substrate is formed with a recess defined by a bottom and sidewalls substantially perpendicular to the bottom, the recess corresponding to the part of the gate insulating film with the first film thickness.
摘要翻译： 诸如闪速存储器的半导体器件包括半导体衬底，在衬底上形成的第一膜厚度和第二膜厚度分别形成在第一膜厚度和第二膜厚度上的两个栅极绝缘膜，以及形成在第一膜厚度上的多晶硅膜 栅极绝缘膜，使得各个栅极绝缘膜上的多晶硅膜的一部分彼此成一层并且用作栅电极。 衬底形成有由底部限定的凹部和基本上垂直于底部的侧壁，凹部对应于具有第一膜厚度的栅极绝缘膜的部分。
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