公开(公告)号：US4450018A

公开(公告)日：1984-05-22

申请号：US482614

申请日：1983-04-06

申请人： Katsuyuki Suga ,  Toyofumi Kitada ,  Yutaka Naganawa ,  Hirotaka Nakagawa

发明人： Katsuyuki Suga ,  Toyofumi Kitada ,  Yutaka Naganawa ,  Hirotaka Nakagawa

IPC分类号： B23K35/36 ,  B23K35/362 ,  B23K35/34 ,  C22B9/10

CPC分类号： B23K35/361 ,  B23K35/362

摘要： When the invented flux is applied to an inclined welding, especially high speed welding of more than 3 m/min of a spiral welded pipe, desired shapes of beads may be obtained without creating so-called under-cut or excessive concave, whereby speed-up of the welding could be expected in the spiral seam, so that the producing efficiency is exactly increased in the spiral welded steel pipe production.

摘要翻译： 当将本发明的焊剂应用于螺旋焊接管的倾斜焊接，特别是高于3m / min的高速焊接时，可以获得所需形状的焊珠，而不产生所谓的下切或过度凹陷， 在螺旋焊缝中可以预期焊接，从而在螺旋焊接钢管生产中提高了生产效率。

公开(公告)号：US06677222B1

公开(公告)日：2004-01-13

申请号：US09637276

申请日：2000-08-11

申请人： Yasuyoshi Mishima ,  Katsuyuki Suga ,  Michiko Takei ,  Akito Hara

发明人： Yasuyoshi Mishima ,  Katsuyuki Suga ,  Michiko Takei ,  Akito Hara

IPC分类号： H01L2120

CPC分类号： H01L21/02675 ,  H01L21/2022 ,  H01L21/2026

摘要： A first layer made of polysilicon is formed on the surface of an underlying substrate. The surface of the first layer is exposed to an environment which etches silicon oxide. If the surface of the first layer is covered with a silicon oxide film, the silicon oxide film is removed. An energy is supplied to the first layer, the energy allowing silicon crystal to re-grow. Solid phase growth of silicon occurs in the first layer to planarize the surface thereof. A polysilicon film having small root mean square of roughness can be formed.

摘要翻译： 在下面的衬底的表面上形成由多晶硅制成的第一层。 第一层的表面暴露于蚀刻氧化硅的环境中。 如果第一层的表面被氧化硅膜覆盖，则去除氧化硅膜。 能量被供应到第一层，能量允许硅晶体再生长。 在第一层中发生硅的固相生长以平坦化其表面。 可以形成具有小的粗糙度均方根的多晶硅膜。

公开(公告)号：US08951888B2

公开(公告)日：2015-02-10

申请号：US13703999

申请日：2011-05-23

申请人： Katsuyuki Suga

发明人： Katsuyuki Suga

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L27/12

CPC分类号： H01L33/0095 ,  H01L27/1214 ,  H01L27/1266 ,  Y10S414/135

摘要： A method for fabricating a semiconductor device includes a first step of forming, on a first substrate, a first element region in which a plurality of elements are collectively arranged, a second step of relocating the plurality of elements formed on the first substrate to a holding member in the same arrangement as in the first element region to have the plurality of elements held on the holding member, a third step of rearranging the plurality of elements held on the holding member and having the plurality of elements held on an intermediate substrate, thereby forming a second element region having a shape different from a shape of the first element region on the intermediate substrate, and a fourth step of dispersing the plurality of elements held on the intermediate substrate and adhering the plurality of elements to a second substrate.

摘要翻译： 一种制造半导体器件的方法包括：第一步骤，在第一衬底上形成集成了多个元件的第一元件区域;第二步骤，将形成在第一衬底上的多个元件重新定位到保持 构件以与第一元件区域相同的布置方式将多个元件保持在保持构件上;第三步骤，将保持在保持构件上的多个元件重新排列并且将多个元件保持在中间基板上，由此 形成具有与中间基板上的第一元件区域的形状不同的形状的第二元件区域，以及分散保持在中间基板上的多个元件并将多个元件粘附到第二基板的第四步骤。

公开(公告)号：US08507359B2

公开(公告)日：2013-08-13

申请号：US13511377

申请日：2010-10-19

申请人： Katsuyuki Suga

发明人： Katsuyuki Suga

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  G02F1/136277 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00

摘要： A wire (24) and a pixel electrode (25) are formed on a surface of a flat supporting substrate (21) which surface is opposite to a surface on which a TFT (16) is formed. Accordingly, it is possible to provide an active matrix substrate (2) which makes it possible to suppress a decline in yield.

摘要翻译： 在与形成TFT（16）的表面相对的表面上的平坦支撑基板（21）的表面上形成有线（24）和像素电极（25）。 因此，可以提供能够抑制产量下降的有源矩阵基板（2）。

公开(公告)号：US20120273831A1

公开(公告)日：2012-11-01

申请号：US13511377

申请日：2010-10-19

申请人： Katsuyuki Suga

发明人： Katsuyuki Suga

IPC分类号： H01L23/48 ,  H01L21/02 ,  H01L31/02 ,  H01L21/768 ,  H01L33/62

CPC分类号： H01L27/1266 ,  G02F1/136277 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00

摘要： A wire (24) and a pixel electrode (25) are formed on a surface of a flat supporting substrate (21) which surface is opposite to a surface on which a TFT (16) is formed. Accordingly, it is possible to provide an active matrix substrate (2) which makes it possible to suppress a decline in yield.

摘要翻译： 在与形成TFT（16）的表面相对的表面上的平坦支撑基板（21）的表面上形成有线（24）和像素电极（25）。 因此，可以提供能够抑制产量下降的有源矩阵基板（2）。

公开(公告)号：US20130089933A1

公开(公告)日：2013-04-11

申请号：US13703999

申请日：2011-05-23

申请人： Katsuyuki Suga

发明人： Katsuyuki Suga

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L27/1214 ,  H01L27/1266 ,  Y10S414/135

摘要： A method for fabricating a semiconductor device includes a first step of forming, on a first substrate, a first element region in which a plurality of elements are collectively arranged, a second step of relocating the plurality of elements formed on the first substrate to a holding member in the same arrangement as in the first element region to have the plurality of elements held on the holding member, a third step of rearranging the plurality of elements held on the holding member and having the plurality of elements held on an intermediate substrate, thereby forming a second element region having a shape different from a shape of the first element region on the intermediate substrate, and a fourth step of dispersing the plurality of elements held on the intermediate substrate and adhering the plurality of elements to a second substrate.

摘要翻译： 一种制造半导体器件的方法包括：第一步骤，在第一衬底上形成集成了多个元件的第一元件区域;第二步骤，将形成在第一衬底上的多个元件重新定位到保持 构件以与第一元件区域相同的布置方式将多个元件保持在保持构件上;第三步骤，将保持在保持构件上的多个元件重新排列并且将多个元件保持在中间基板上，由此 形成具有与中间基板上的第一元件区域的形状不同的形状的第二元件区域，以及分散保持在中间基板上的多个元件并将多个元件粘附到第二基板的第四步骤。

公开(公告)号：US20110157113A1

公开(公告)日：2011-06-30

申请号：US13062077

申请日：2009-06-04

申请人： Tadayoshi Miyamoto ,  Katsuyuki Suga ,  Fumiyoshi Yoshioka ,  Satomi Hasegawa

发明人： Tadayoshi Miyamoto ,  Katsuyuki Suga ,  Fumiyoshi Yoshioka ,  Satomi Hasegawa

IPC分类号： G09G5/00

CPC分类号： H01L27/12 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1229 ,  H01L27/1285

摘要： A display panel (100) is provided which allows optimization of the respective characteristics of different semiconductor elements without incurring an increase in manufacturing cost. The display panel (100) includes: pixel TFTs (11) disposed in a display section (101); scanning driver TFTs (12) disposed in a scanning driver (102); and data driver (13) disposed in a data driver (103). A polysilicon film of the pixel TFTs (11), the scanning driver TFTs (12), and the data driver TFTs (13) is polycrystallized by irradiation of laser light so as to have a crystal growth direction that goes along a scanning direction of the laser light. The pixel TFTs (11) are disposed so that the crystal growth direction of the polysilicon film is substantially perpendicular to the directions of current paths of the pixel TFTs (11). The scanning driver TFTs (12) and the data driver TFTs (13) are so that the crystal growth direction of the polysilicon film is substantially parallel to the directions of current paths of the scanning driver TFTs (12) and the data driver TFTs (13).

摘要翻译： 提供了显示面板（100），其允许优化不同半导体元件的相应特性，而不会导致制造成本的增加。 显示面板（100）包括：设置在显示部（101）中的像素TFT（11）; 设置在扫描驱动器（102）中的扫描驱动TFT（12）; 和数据驱动器（13），其设置在数据驱动器（103）中。 像素TFT（11），扫描驱动器TFT（12）和数据驱动器TFT（13）的多晶硅膜通过激光的照射被多晶化，以具有沿着扫描方向的晶体生长方向 激光灯。 像素TFT（11）被布置成使得多晶硅膜的晶体生长方向基本上垂直于像素TFT（11）的电流路径的方向。 扫描驱动器TFT（12）和数据驱动器TFT（13）使得多晶硅膜的晶体生长方向基本上平行于扫描驱动TFT（12）和数据驱动器TFT（13）的电流路径的方向 ）。