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公开(公告)号:US20070059935A1
公开(公告)日:2007-03-15
申请号:US11512837
申请日:2006-08-30
CPC分类号: H01L21/02024 , B24B37/044 , B24B55/12 , B24B57/04 , C09G1/02 , Y02P70/179
摘要: A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50-60 wt %/40-50 wt %, a modulus of elasticity of 1.4×1010 Pa or higher and a particle size of 1 μm or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.