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    Magneto-resistive element and magnetic head for data writing/reading
    5.
    发明授权
    Magneto-resistive element and magnetic head for data writing/reading 有权
    用于数据写入/读取的磁阻元件和磁头

    公开(公告)号：US06490139B1

    公开(公告)日：2002-12-03

    申请号：US09492229

    申请日：2000-01-27

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967

    摘要： A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.

    摘要翻译： 磁阻元件包括第一电极，形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。 磁阻层具有形成在第一电极上的第一磁性层，形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。 第一电极的平均表面粗糙度等于或小于0.3nm。 由于第一电极具有如此小的平均表面粗糙度，所以形成在第一电极层上的非磁性层变扁平化，从而防止了电流泄漏。 第一电极由具有强粘合强度的Ta，Zr，Ti，Hf，W，Mo，Y，V，Nb，Au，Ag，Pd和Pt中的至少一种制成。 由于第一电极具有强的结合强度，所以不会发生第一电极与接触第一电极的层的剥离。

    Magnetoresistance element, with lower electrode anti-erosion/flaking layer
    6.
    发明授权
    Magnetoresistance element, with lower electrode anti-erosion/flaking layer 有权
    磁阻元件，具有较低的电极抗侵蚀/剥落层

    公开(公告)号：US06493195B1

    公开(公告)日：2002-12-10

    申请号：US09651068

    申请日：2000-08-30

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Hiroaki Honjo ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Hiroaki Honjo ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/09 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  H01F10/3268 ,  H01F41/302

    摘要： A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.

    摘要翻译： 磁阻元件包括下电极层，磁阻效应层，上电极层和下电极抗侵蚀/剥落层。 在除去形成在图案化的下电极层上的光致抗蚀剂层之前形成的下电极抗腐蚀/剥离层围绕下电极层形成，使得其面向下电极层的边缘将与边缘 的下电极层。 通过使用下电极抗腐蚀/剥落层，在光致抗蚀剂层去除步骤中（当残留在图案化的下电极上的光致抗蚀剂层时，保护下电极层的边缘不暴露于含有溶解的光致抗蚀剂的脱模剂 层），由此可以避免由于光致抗蚀剂去除步骤中的边缘的侵蚀/剥落引起的下电极层的边缘的粗糙度的增加，从而可以使上电极层和下电极层之间的电短路 从而可以获得高灵敏度和高性能的磁阻元件，并且可以提高磁阻元件的制造成品率。