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    Magneto-resistive element and magnetic head for data writing/reading
    5.
    发明授权
    Magneto-resistive element and magnetic head for data writing/reading 有权
    用于数据写入/读取的磁阻元件和磁头

    公开(公告)号：US06490139B1

    公开(公告)日：2002-12-03

    申请号：US09492229

    申请日：2000-01-27

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967

    摘要： A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.

    摘要翻译： 磁阻元件包括第一电极，形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。 磁阻层具有形成在第一电极上的第一磁性层，形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。 第一电极的平均表面粗糙度等于或小于0.3nm。 由于第一电极具有如此小的平均表面粗糙度，所以形成在第一电极层上的非磁性层变扁平化，从而防止了电流泄漏。 第一电极由具有强粘合强度的Ta，Zr，Ti，Hf，W，Mo，Y，V，Nb，Au，Ag，Pd和Pt中的至少一种制成。 由于第一电极具有强的结合强度，所以不会发生第一电极与接触第一电极的层的剥离。

    MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT
    6.
    发明授权
    MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT 有权
    具有终端部分的电阻较小的中央部分，具有磁阻头的磁阻电阻检测系统和使用其的磁性存储系统的磁致伸缩膜

    公开(公告)号：US06538861B1

    公开(公告)日：2003-03-25

    申请号：US09597458

    申请日：2000-06-19

    申请人： Kazuhiko Hayashi ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Tamaki Toba ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Tamaki Toba ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  H01F10/3254

    摘要： A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion. Further, it is possible to attach re-adhesive substance, which is produced by milling for patterning of the ferromagnetic tunnel junction film, to a specific terminal surface of the ferromagnetic tunnel junction film which is opposite to an ABS plane. Those measures provide a bypass allowing overcurrent release between the free layer and fixing layer. Moreover, adjustment milling or plasma oxidation is employed to control an amount of the re-adhesive substance being attached to the terminal surface of the ferromagnetic tunnel junction film. Thus, by adequately optimizing the amount of the re-adhesive substance, it is possible to improve yield in manufacturing the magnetoresistive heads.

    摘要翻译： 使用布置在下电极和上电极之间的铁磁隧道结（MTJ）膜来构造其磁阻效应的操作的磁阻头。 铁磁隧道结膜基本上是使用一组自由层，阻挡层和固定层构成的，它们依次形成并层压在下电极上。 这里，铁磁隧道结膜被设计成通过规定的措施避免制造中的静电破坏。 例如，与中心部分相比，阻挡层在端子部分的厚度减小。 或者，阻挡层在端子部分具有缺陷。 此外，可以在其端子部分附近提供与阻挡层相关的导体。 此外，可以将通过研磨制造的用于图案化铁磁性隧道结膜的再粘合物质附着到与ABS平面相反的铁磁性隧道结膜的特定末端表面。 这些措施提供了允许在自由层和固定层之间过电流释放的旁路。 此外，调整研磨或等离子体氧化被用于控制附着到铁磁性隧道结膜的终端表面上的再粘合物质的量。 因此，通过充分优化再粘合物质的量，可以提高制造磁阻磁头的成品率。

    Magnetoresistance element, with lower electrode anti-erosion/flaking layer
    7.
    发明授权
    Magnetoresistance element, with lower electrode anti-erosion/flaking layer 有权
    磁阻元件，具有较低的电极抗侵蚀/剥落层

    公开(公告)号：US06493195B1

    公开(公告)日：2002-12-10

    申请号：US09651068

    申请日：2000-08-30

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Hiroaki Honjo ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Hiroaki Honjo ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/09 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  H01F10/3268 ,  H01F41/302

    摘要： A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.

    摘要翻译： 磁阻元件包括下电极层，磁阻效应层，上电极层和下电极抗侵蚀/剥落层。 在除去形成在图案化的下电极层上的光致抗蚀剂层之前形成的下电极抗腐蚀/剥离层围绕下电极层形成，使得其面向下电极层的边缘将与边缘 的下电极层。 通过使用下电极抗腐蚀/剥落层，在光致抗蚀剂层去除步骤中（当残留在图案化的下电极上的光致抗蚀剂层时，保护下电极层的边缘不暴露于含有溶解的光致抗蚀剂的脱模剂 层），由此可以避免由于光致抗蚀剂去除步骤中的边缘的侵蚀/剥落引起的下电极层的边缘的粗糙度的增加，从而可以使上电极层和下电极层之间的电短路 从而可以获得高灵敏度和高性能的磁阻元件，并且可以提高磁阻元件的制造成品率。