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9 条记录 (耗时 0.047 秒)

    Magnetoresistive effect element
    8.
    发明授权
    Magnetoresistive effect element 失效
    磁阻效应元件

    公开(公告)号：US5880911A

    公开(公告)日：1999-03-09

    申请号：US882229

    申请日：1997-06-25

    申请人： Kunihiko Ishihara ,  Hidefumi Yamamoto ,  Kazuhiko Hayashi ,  Jun-Ichi Fujikata

    发明人： Kunihiko Ishihara ,  Hidefumi Yamamoto ,  Kazuhiko Hayashi ,  Jun-Ichi Fujikata

    IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3925 ,  H01L43/08 ,  G11B2005/0016 ,  G11B2005/3996 ,  G11B5/3932 ,  G11B5/399

    摘要： The magnetoresistive effect element in accordance with the invention has several aspects. For instance, the magnetoresistive effect element includes an artificial lattice multilayered structure composed of a thin magnetic layer and a non-magnetic layer at least once successively deposited, and a bias field applying device for applying a bias magnetic field to the artificial lattice multilayered structure so that an orientation of residual magnetization of one of the thin magnetic layers having a greater coercive force than that of an adjacent thin magnetic layer, is the same as an orientation of a bias magnetic field to be applied to the artificial lattice multilayered structure. The magnetoresistive effect element provides enhanced regenerated outputs and also improves the symmetry of regenerated waveforms.

    摘要翻译： 根据本发明的磁阻效应元件具有若干方面。 例如，磁阻效应元件包括由至少一次连续沉积的薄磁性层和非磁性层构成的人造晶格多层结构，以及用于向人造晶格多层结构施加偏置磁场的偏置场施加装置 与相邻的薄磁性层相比，具有更大的矫顽力的薄磁性层之一的剩余磁化的取向与施加到人造晶格多层结构的偏置磁场的取向相同。 磁阻效应元件提供增强的再生输出并且还提高再生波形的对称性。

    Magnetoresistance effects film
    9.
    发明授权
    Magnetoresistance effects film 失效
    磁阻效应胶片

    公开(公告)号：US06063491A

    公开(公告)日：2000-05-16

    申请号：US38093

    申请日：1998-03-11

    申请人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara

    发明人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/18 ,  H01F10/28 ,  H01F10/32 ,  H01L43/08 ,  G11B5/66

    CPC分类号： H01L43/08 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

    摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.

    摘要翻译： 本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜 的薄磁性膜，薄的非磁性膜被插入其间。 由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。 薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。 超晶格结构中的原子数相对于Co的比例设定为1.0以上。 即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。