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    Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device
    2.
    发明授权
    Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device 有权
    用于制造非易失性半导体存储器件的非易失性半导体存储器件和方法

    公开(公告)号：US08729517B2

    公开(公告)日：2014-05-20

    申请号：US13044951

    申请日：2011-03-10

    申请人： Takuya Konno ,  Kazuhiko Yamamoto

    发明人： Takuya Konno ,  Kazuhiko Yamamoto

    IPC分类号： H01L45/00

    CPC分类号： H01L45/141 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/148 ,  H01L45/1608

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一互连，第二互连和电阻变化层。 第一互连在衬底的主表面上沿第一方向延伸。 第二互连在不平行于第一方向的第二方向上延伸。 电阻变化层包括导电纳米材料，电阻变化层位于第一互连和第二互连之间，并且能够通过施加的电压或通过第一互连提供的电流在第一电阻状态和第二电阻状态之间可逆地改变 和第二互连。 电阻变化层的密度沿大致垂直于第一方向和第二方向的第三方向变化。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    3.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08860000B2

    公开(公告)日：2014-10-14

    申请号：US13019630

    申请日：2011-02-02

    申请人： Kazuhiko Yamamoto ,  Takuya Konno

    发明人： Kazuhiko Yamamoto ,  Takuya Konno

    IPC分类号： H01L47/00 ,  H01L27/24 ,  H01L45/00

    CPC分类号： H01L45/085 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/149 ,  H01L45/1658

    摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.

    摘要翻译： 根据实施例的非易失性半导体存储器件包括下电极层，可变电阻层和上电极层。 下电极层设置在基板上。 可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。 上电极层设置在可变电阻层上。 可变电阻层包括碳纳米结构和金属原子。 碳纳米结构被堆叠以具有多个间隙。 金属原子扩散到间隙中。

    NONVOLATILE STORAGE DEVICE
    4.
    发明申请
    NONVOLATILE STORAGE DEVICE 有权
    非易失存储器件

    公开(公告)号：US20120217464A1

    公开(公告)日：2012-08-30

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Nonvolatile storage device
    5.
    发明授权
    Nonvolatile storage device 有权
    非易失存储设备

    公开(公告)号：US08895952B2

    公开(公告)日：2014-11-25

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Semiconductor memory device with resistance change film and method of manufacturing the same
    6.
    发明授权
    Semiconductor memory device with resistance change film and method of manufacturing the same 有权
    具有电阻变化膜的半导体存储器件及其制造方法

    公开(公告)号：US09595567B2

    公开(公告)日：2017-03-14

    申请号：US13585141

    申请日：2012-08-14

    申请人： Kazuhiko Yamamoto

    发明人： Kazuhiko Yamamoto

    IPC分类号： H01L29/49 ,  H01L27/24 ,  H01L29/40 ,  H01L45/00

    CPC分类号： H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616

    摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of insulating layers, a plurality of first interconnection layers, a plurality of second interconnection layers, a plurality of memory cells, and a resistance change film. The insulating layers and first interconnection layers are arranged in parallel with the semiconductor substrate. The second interconnection layers are arranged so as to intersect the first interconnection layers. The second interconnection layers are arranged perpendicular to the semiconductor substrate. The memory cells are arranged at intersections of the first and second interconnection layers. Each of the memory cells includes the resistance change film arranged between the first and second interconnection layers. The side of the first interconnection layer in contact with the resistance change film is retreated more in a direction to separate from the second interconnection layer than the side of the insulating layer.

    摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，多个绝缘层，多个第一互连层，多个第二互连层，多个存储单元和电阻变化膜。 绝缘层和第一互连层与半导体衬底平行布置。 第二互连层被布置成与第一互连层相交。 第二互连层被布置成垂直于半导体衬底。 存储单元布置在第一和第二互连层的交点处。 每个存储单元包括布置在第一和第二互连层之间的电阻变化膜。 与电阻变化膜接触的第一互连层的一侧比与绝缘层的侧面沿着与第二互连层分离的方向更多地退避。

    Inkjet recording sheet
    9.
    发明授权
    Inkjet recording sheet 有权
    喷墨记录纸

    公开(公告)号：US08337011B2

    公开(公告)日：2012-12-25

    申请号：US12820278

    申请日：2010-06-22

    申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

    发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

    IPC分类号： B41J2/01

    CPC分类号： B41M5/52 ,  B41M5/5245 ,  B41M5/5254 ,  B41M5/5263 ,  B41M5/5281 ,  B41M5/529

    摘要： An inkjet recording sheet for forming an image using aqueous pigment ink that includes a substrate and an ink-receiving layer formed on the substrate. The ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition. In the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.

    摘要翻译： 一种用于使用水性颜料油墨形成图像的喷墨记录纸，其包括基板和形成在基板上的油墨接收层。 通过在基材上涂布含有水解性甲硅烷基作为交联成分的阳离子性丙烯酸类硅酮乳液类树脂的涂料组合物，得到油墨接受层; 阳离子聚醚基聚氨酯树脂; 和含碳二亚胺基团的树脂，然后固化所涂覆的涂料组合物。 在涂料组合物中，阳离子丙烯酸类硅酮乳液系树脂的含量为2〜7质量％，阳离子性聚醚系聚氨酯树脂的含量为88〜94质量％，碳二亚胺基 - 含有树脂的固体成分为2〜6质量％。

    INK JET RECORDING MEDIUM
    10.
    发明申请
    INK JET RECORDING MEDIUM 有权
    喷墨记录介质

    公开(公告)号：US20110318510A1

    公开(公告)日：2011-12-29

    申请号：US13168108

    申请日：2011-06-24

    申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto

    发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto

    IPC分类号： B41M5/40

    CPC分类号： B41M5/52 ,  B41M5/506 ,  B41M5/508 ,  B41M5/5218 ,  B41M5/5236 ,  B41M5/5254 ,  B41M5/5281 ,  B41M5/529

    摘要： Provided is an ink jet recording medium which is capable of reproducing a wide range of gloss including high luster like metallic luster and substantially no luster due to matting by varying only the amount of applied ink and in which the consumption of a white ink used to adjust the glossiness thereof is small.

    摘要翻译： 本发明提供一种喷墨记录介质，其能够再现宽范围的光泽，其包括如光泽度高的光泽，并且由于仅通过改变所施加的油墨的量而消光而基本上没有光泽，并且其中用于调节的白色油墨的消耗 其光泽度小。