公开(公告)号：US07960078B2

公开(公告)日：2011-06-14

申请号：US11718760

申请日：2005-11-08

申请人： Kazuo Sawai ,  Akihiro Sonoda

发明人： Kazuo Sawai ,  Akihiro Sonoda

IPC分类号： G03C5/00 ,  G03F1/00 ,  G06K9/00

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。

公开(公告)号：US20070298335A1

公开(公告)日：2007-12-27

申请号：US11718760

申请日：2005-11-08

申请人： Kazuo Sawai ,  Akihiro Sonoda

发明人： Kazuo Sawai ,  Akihiro Sonoda

IPC分类号： G03C5/00 ,  G21K5/10

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。

公开(公告)号：US08500950B2

公开(公告)日：2013-08-06

申请号：US13114329

申请日：2011-05-24

申请人： Kazuo Sawai ,  Akihiro Sonoda

发明人： Kazuo Sawai ,  Akihiro Sonoda

IPC分类号： H01L21/306 ,  H01L21/3063 ,  H01L21/3065 ,  H01L21/308

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。

公开(公告)号：US20110220287A1

公开(公告)日：2011-09-15

申请号：US13114329

申请日：2011-05-24

申请人： Kazuo SAWAI ,  Akihiro Sonoda

发明人： Kazuo SAWAI ,  Akihiro Sonoda

IPC分类号： C23F1/08

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。

公开(公告)号：US06432727B1

公开(公告)日：2002-08-13

申请号：US09635575

申请日：2000-08-09

申请人： Akihiro Sonoda

发明人： Akihiro Sonoda

IPC分类号： H01L2100

CPC分类号： H01L21/6715

摘要： An ion generator generates ions above a semiconductor wafer and the ions are directed towards a surface of a semiconductor wafer. The ions combine with static charges on the semiconductor wafer to thereby discharge the surface of the semiconductor wafer.

摘要翻译： 离子发生器在半导体晶片之上产生离子，离子指向半导体晶片的表面。 离子与半导体晶片上的静电荷组合，从而对半导体晶片的表面进行放电。

公开(公告)号：US06440614B1

公开(公告)日：2002-08-27

申请号：US09431033

申请日：1999-11-01

申请人： Akihiro Sonoda

发明人： Akihiro Sonoda

IPC分类号： G03F900

CPC分类号： G03F1/36

摘要： In order to provide a mask and a method for manufacturing a semiconductor device that achieve consistency in the resist pattern dimensions, a main pattern 110 provided for the purpose of semiconductor element production and an additional pattern 120 provided for the purpose of exposure quantity adjustment are drawn at a reticle 100. At the reticle 100, the additional pattern 120 achieves a regularity almost identical to that of the main pattern 110. At the same time, the additional pattern 120 has a specific shift relative to the main pattern 110. By achieving an optimal degree of shift between the additional pattern and main pattern at the reticle 100, consistency in the resist pattern dimensions can be achieved without adversely affecting the process of element pattern formation.

摘要翻译： 为了提供一种制造半导体器件的掩模和方法，其实现了抗蚀剂图案尺寸的一致性，绘制为了半导体元件制造而设置的主图案110和为曝光量调整目的而设置的附加图案120 在掩模版100处，附加图案120实现与主图案110的规则几乎相同的规则。同时，附加图案120具有相对于主图案110的特定位移。通过实现 在掩模版100处的附加图案和主图案之间的最佳偏移度可以在不影响元件图案形成的过程的情况下实现抗蚀剂图案尺寸的一致性。

公开(公告)号：US4738085A

公开(公告)日：1988-04-19

申请号：US867502

申请日：1986-05-28

申请人： Tadashi Nishio ,  Mitsuo Osakabe ,  Keizo Shimizu ,  Akihiro Sonoda

发明人： Tadashi Nishio ,  Mitsuo Osakabe ,  Keizo Shimizu ,  Akihiro Sonoda

IPC分类号： A01D34/416 ,  A01D34/67

CPC分类号： A01D34/4163

摘要： A rotary cutter head for use with a rotating filament trimmer in which a reel for winding cords or filaments is held between a housing covering a lower portion thereof and a retainer or hub fixed on the driven rotating shaft of the trimmer unit and is rotatably disposed within the housing. Within the bore of the reel, an axially movable slider is normally biased toward the retainer by the elastic force of a spring so that meshing engagement occurs between a peripheral array of axially projecting tongues formed on one end of the slider and a plurality of radial teeth-like ribs formed on the inner side of the retainer and establishes a driving connection to rotate the reels. By applying an axial impact against the housing, the slider is moved axially by inertial forces against the biasing force of the spring to release that engagement, and axially projecting detent fingers formed around the other end of the slider press against the opposed slopes of a circular rib formed on the inner side of the housing and bring about both positive relative rotation of the reel and fix a limit to such rotation to a predetermined amount thereby to play out a limited length of fresh cords. In order that the reel may rotate in an opposite direction to rewind the cords, moreover, the radial ribs formed on the retainer and the tongues of the slider are formed with opposed cooperating cam slopes which force the slider axially until the tongues are clear of the ribs during backward rotation.

摘要翻译： 一种与旋转细丝修剪器一起使用的旋转刀头，其中用于缠绕绳索或细丝的卷轴被保持在覆盖其下部的壳体和固定在修剪器单元的从动旋转轴上的保持器或轮毂之间，并且可旋转地设置在 住房。 在卷轴的孔内，通过弹簧的弹力将轴向移动的滑块通常朝向保持器偏置，使得啮合啮合发生在形成在滑块的一端上的轴向突出的舌片的周边阵列与多个径向齿 形成在保持器的内侧上并形成驱动连接以旋转卷轴。 通过对壳体施加轴向冲击，滑块通过抵抗弹簧的偏置力的惯性力轴向移动以释放该接合，并且将滑动件的另一端周围形成的止动指状轴向突出抵靠圆形的相对的斜面 肋形成在壳体的内侧上并带来卷轴的正向相对旋转，并将这种旋转的极限固定到预定量，从而播放有限长度的新鲜帘线。 为了使卷轴可以沿相反的方向旋转以重绕绳索，此外，形成在保持器上的径向肋和滑块的舌部形成有相对的配合凸轮斜面，其使轴向轴向地推动滑块，直到舌片远离 反向旋转时肋骨。

公开(公告)号：US06909587B2

公开(公告)日：2005-06-21

申请号：US10147823

申请日：2002-05-20

申请人： Akihiro Sonoda

发明人： Akihiro Sonoda

IPC分类号： H01L21/027 ,  G03F7/16 ,  G03F7/38 ,  H01L21/00 ,  H01L21/02 ,  H05F3/00

CPC分类号： H01L21/6715

摘要： An ion generator generates ions above a semiconductor wafer and the ions are directed towards a surface of a semiconductor wafer. The ions combine with static charges on the semiconductor wafer to thereby discharge the surface of the semiconductor wafer.

摘要翻译： 离子发生器在半导体晶片之上产生离子，离子指向半导体晶片的表面。 离子与半导体晶片上的静电荷组合，从而对半导体晶片的表面进行放电。