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6 条记录 (耗时 0.049 秒)

    Transistor
    3.
    发明授权
    Transistor 失效
    晶体管

    公开(公告)号：US4151542A

    公开(公告)日：1979-04-24

    申请号：US875917

    申请日：1978-02-07

    申请人： Kazuo Yajima ,  Masaaki Kobayashi ,  Yoshiaki Nawata ,  Shigeo Iwasawa ,  Koji Takahashi

    发明人： Kazuo Yajima ,  Masaaki Kobayashi ,  Yoshiaki Nawata ,  Shigeo Iwasawa ,  Koji Takahashi

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/73 ,  H01L29/732 ,  H01L29/72

    CPC分类号： H01L29/732 ,  H01L29/0813 ,  H01L29/7304

    摘要： A transistor which has a plurality of ring emitter transistor units formed on a common semiconductor substrate having one conductivity type, each ring emitter transistor unit being provided with a base region of the opposite conductivity type from the semiconductor substrate and formed on its surface, an emitter region of the same conductivity type as the semiconductor substrate and formed in the base region to a depth smaller than the latter to have a ring-shaped plane configuration, a base electrode formed in the vicinity of the outer or inner periphery of the ring-shaped emitter region, an emitter electrode formed in the vicinity of the inner or outer periphery of the emitter region, and a ballasting resistor formed to interconnect the emitter region and the emitter electrode. The product of the area of the emitter region and the resistance value of the ballasting resistor is selected to be in the range of from 6.0 .times. 10.sup.-4 to 1.3 .times. 10.sup.-3 [.OMEGA..multidot.cm.sup.2 ], to provide for enhanced power handling capability of the transistor without a large reduction in its maximum current and to facilitate the design of this kind of transistor.

    摘要翻译： 一种晶体管，其具有形成在具有一种导电类型的公共半导体衬底上的多个环形发射极晶体管单元，每个环形发射极晶体管单元设置有与半导体衬底相反的导电类型的基极区域并在其表面上形成发射极 与半导体基板相同的导电类型的区域形成在基部区域中的深度小于后者的深度以具有环形平面构造，形成在环形的外周或内周附近的基极 发射极区域，形成在发射极区域的内周或外周附近的发射极电极，以及形成为使发射极区域和发射极电极互连的镇流电阻器。 发射极区域的面积和镇流电阻器的电阻值的乘积选择在6.0×10 -4至1.3×10 -3 [欧米伽×cm 2]的范围内，以提供增强的功率处理能力 晶体管的最大电流没有大的减小，并且有利于这种晶体管的设计。

    High power transistor
    6.
    发明授权
    High power transistor 失效
    大功率晶体管

    公开(公告)号：US4157561A

    公开(公告)日：1979-06-05

    申请号：US837303

    申请日：1977-09-27

    申请人： Yoshiaki Nawata ,  Masaaki Kobayashi ,  Kazuo Yajima ,  Shigeo Iwasawa ,  Koji Takahashi

    发明人： Yoshiaki Nawata ,  Masaaki Kobayashi ,  Kazuo Yajima ,  Shigeo Iwasawa ,  Koji Takahashi

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/73 ,  H01L29/72

    CPC分类号： H01L29/0804 ,  H01L29/41708 ,  H01L29/7304

    摘要： This invention relates to a high power bipolar transistor comprising a collector region, a base region formed in the collector region and emitter regions formed in the base region, with each of the emitter regions being a closed loop at the surface of the base region. The emitter electrode contact region is arranged at the surface of base region and surrounded by the emitter region, and the emitter electrode contact region and emitter region are connected by a conductive area, with the conductive area being shallower than the emitter region. In addition, the conductive area is connected to the internal surface of the emitter region at one or more points but is not connected to the entire part of the internal surface of the emitter region.By such a configuration, a current generated by the internal voltage due to remaining injection carriers, (particularly during the turn-off period), flows through the internal surface of the emitter region in an essentially uniform fashion, thereby preventing secondary breakdown of the transistor.

    摘要翻译： 本发明涉及一种高功率双极晶体管，包括集电极区域，形成在集电极区域中的基极区域和形成在基极区域中的发射极区域，其中每个发射极区域在基极区域的表面处是闭环的。 发射极电极接触区域布置在基极区域的表面并由发射极区域包围，发射极电极接触区域和发射极区域通过导电区域连接，导电区域比发射极区域浅。 此外，导电区域在一个或多个点处连接到发射极区域的内表面，但不连接到发射极区域的内表面的整个部分。