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    Semiconductor laser
    1.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US08625647B2

    公开(公告)日：2014-01-07

    申请号：US13677951

    申请日：2012-11-15

    申请人： Kazuya Ohira ,  Nobuo Suzuki

    发明人： Kazuya Ohira ,  Nobuo Suzuki

    IPC分类号： H01S5/00

    CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/2215 ,  H01S5/343 ,  H01S5/34313

    摘要： A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

    摘要翻译： 实施方式的半导体激光器包括：光谐振器，具有第一包层，第一包层上的环状有源层，有源层上的环状第二包层，第一包层上的环状第二包层， 第一包层，第二包层上的环状第二电极，由第一包层和有源层之间的第一绝缘层，由内壁朝向环形的外壁形成，其中外壁侧边缘 在内壁上形成有位于内侧的外侧壁和位于内壁侧的第二绝缘层，所述第二绝缘层由所述内壁朝向所述外壁形成， 外墙 以及光耦合到光谐振器的光波导。

    Optical transmission-reception system and light-receiving unit
    2.
    发明授权
    Optical transmission-reception system and light-receiving unit 有权
    光接收系统和光接收单元

    公开(公告)号：US09008473B2

    公开(公告)日：2015-04-14

    申请号：US13692241

    申请日：2012-12-03

    申请人： Haruhiko Yoshida ,  Kazuya Ohira ,  Mizunori Ezaki

    发明人： Haruhiko Yoshida ,  Kazuya Ohira ,  Mizunori Ezaki

    IPC分类号： G02B6/12 ,  G02B6/43 ,  G02B6/125 ,  G02B6/293

    CPC分类号： G02B6/12 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/125 ,  G02B6/29343 ,  G02B6/43 ,  G02B2006/12119

    摘要： An optical transmission-reception system includes: a light-emitting element having a first semiconductor multilayer structure with a ring- or disk-like shape and generating a first optical signal and a second optical signal rotating in a direction opposite to the first optical signal; a first optical waveguide optically coupled with the light-emitting element and propagating the first optical signal; a second optical waveguide optically coupled with the light-emitting element and propagating the second optical signal; and a light-receiving element having a second semiconductor multilayer structure with a ring- or disk-like shape, optically coupled with the first and second optical waveguides, and optically receiving the first and second optical signals. The first optical waveguide has a spiral shape at a coupling part with the light-receiving element, and the second optical waveguide has a spiral shape winding in the same direction as the first optical waveguide at a coupling part with the light-receiving element.

    摘要翻译： 光发送接收系统包括：发光元件，其具有环形或圆盘状的第一半导体多层结构，并产生沿与第一光信号相反的方向旋转的第一光信号和第二光信号; 第一光波导，与所述发光元件光耦合并传播所述第一光信号; 第二光波导，与所述发光元件光耦合并传播所述第二光信号; 以及光接收元件，具有具有环形或圆盘形形状的第二半导体多层结构，与第一和第二光学波导光学耦合，并且光学地接收第一和第二光学信号。 第一光波导在与光接收元件的耦合部分处具有螺旋形状，并且第二光波导在与光接收元件的耦合部分处具有与第一光波导相同的方向上的螺旋形状的绕组。

    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US08611392B2

    公开(公告)日：2013-12-17

    申请号：US13050416

    申请日：2011-03-17

    申请人： Kazuya Ohira ,  Haruhiko Yoshida ,  Mizunori Ezaki

    发明人： Kazuya Ohira ,  Haruhiko Yoshida ,  Mizunori Ezaki

    IPC分类号： H01S5/00 ,  H01S3/097 ,  H01S3/08 ,  H01S3/083

    CPC分类号： H01S5/1071 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2215 ,  H01S5/2275 ,  H01S5/3213 ,  H01S2301/176

    摘要： In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes.

    摘要翻译： 在一个实施例中，半导体激光器包括形成为环形的半导体叠层体和第一和第二电极。 半导体层叠体包括活性层，形成在有源层的两侧的第一和第二覆盖层，形成在第一和第二覆盖层上的第一和第二接触层以及第一和第二改性层。 第一和第二改性层通过选择性地改变第一和第二包覆层的内周侧壁和外周侧壁以使其折射率低于第一和第二包覆层的折射率而形成。 第一和第二接触层电连接到第一和第二电极。