公开(公告)号：US20110027988A1

公开(公告)日：2011-02-03

申请号：US12646478

申请日：2009-12-23

Applicant: Sun-Hwan HWANG ,  Se-Aug Jang ,  Kee-Joon Oh ,  Soon-Young Park

Inventor： Sun-Hwan HWANG ,  Se-Aug Jang ,  Kee-Joon Oh ,  Soon-Young Park

IPC: H01L21/283

CPC classification number: H01L21/743 ,  H01L27/10876 ,  H01L27/10891

Abstract: Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.

Abstract translation: 提供了一种在半导体器件中形成掩埋字线的方法。 该方法包括通过蚀刻衬垫层和衬底形成沟槽，形成导电层以填充沟槽，使导电层平坦化直到焊盘层露出，在平坦化导电层上执行回蚀刻工艺，并执行 在形成导电层中的至少一个，导电层的平坦化和在平坦化的导电层上执行回蚀处理之后，在氮化物基气体的气氛中进行退火处理。

公开(公告)号：US08450211B2

公开(公告)日：2013-05-28

申请号：US13240340

申请日：2011-09-22

Applicant: Soo-Byung Ko ,  Kee-Joon Oh ,  Sung-Hyun Yoon ,  Soon-Young Park

Inventor： Soo-Byung Ko ,  Kee-Joon Oh ,  Sung-Hyun Yoon ,  Soon-Young Park

IPC: H01L21/44 ,  H01L21/311 ,  H01L21/4763

CPC classification number: H01L21/76826 ,  H01L21/02063 ,  H01L21/02129 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76831 ,  H01L27/10855 ,  H01L27/10888

Abstract: A method for fabricating a semiconductor device includes forming an insulation layer containing an impurity, forming a contact hole by etching the insulation layer, performing a treatment to decrease a concentration of the impurity on a surface of the insulation layer, and rinsing the contact hole.

Abstract translation: 一种制造半导体器件的方法包括：形成含有杂质的绝缘层，通过蚀刻绝缘层形成接触孔，进行处理以降低绝缘层表面上的杂质浓度，以及漂洗接触孔。

公开(公告)号：US08309448B2

公开(公告)日：2012-11-13

申请号：US12646478

申请日：2009-12-23

Applicant: Sun-Hwan Hwang ,  Se-Aug Jang ,  Kee-Joon Oh ,  Soon-Young Park

Inventor： Sun-Hwan Hwang ,  Se-Aug Jang ,  Kee-Joon Oh ,  Soon-Young Park

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/743 ,  H01L27/10876 ,  H01L27/10891

Abstract: Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.

Abstract translation: 提供了一种在半导体器件中形成掩埋字线的方法。 该方法包括通过蚀刻衬垫层和衬底形成沟槽，形成导电层以填充沟槽，使导电层平坦化直到焊盘层露出，在平坦化的导电层上执行回蚀刻工艺，并执行 在形成导电层中的至少一个，导电层的平坦化和在平坦化的导电层上执行回蚀处理之后，在氮化物基气体的气氛中进行退火处理。

公开(公告)号：US20120220124A1

公开(公告)日：2012-08-30

申请号：US13240340

申请日：2011-09-22

Applicant: Soo-Byung Ko ,  Kee-Joon Oh ,  Sung-Hyun Yoon ,  Soon-Young Park

Inventor： Soo-Byung Ko ,  Kee-Joon Oh ,  Sung-Hyun Yoon ,  Soon-Young Park

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76826 ,  H01L21/02063 ,  H01L21/02129 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76831 ,  H01L27/10855 ,  H01L27/10888

Abstract: A method for fabricating a semiconductor device includes forming an insulation layer containing an impurity, forming a contact hole by etching the insulation layer, performing a treatment to decrease a concentration of the impurity on a surface of the insulation layer, and rinsing the contact hole.

Abstract translation: 一种制造半导体器件的方法包括：形成含有杂质的绝缘层，通过蚀刻绝缘层形成接触孔，进行处理以降低绝缘层表面上的杂质浓度，以及漂洗接触孔。

公开(公告)号：US20060091110A1

公开(公告)日：2006-05-04

申请号：US11027831

申请日：2004-12-30

Applicant: Kee-Joon Oh

Inventor： Kee-Joon Oh

IPC: B44C1/22 ,  C23G1/00 ,  C23F1/00

CPC classification number: C11D7/3245 ,  C11D7/06 ,  C11D7/263 ,  C11D11/0047 ,  C23G1/205 ,  H01L21/02052 ,  H01L21/02071

Abstract: The present invention provides a cleaning solution and a method for cleaning a semiconductor device by the same capable of preventing damages on a tungsten layer from the cleaning solution and removing particles. The cleaning solution includes a deionized water-based ammonia solution; a surfactant added to the ammonia solution; and a chelating agent added to the ammonia solution. The method includes the steps of: depositing a photoresist layer on an upper portion of a substrate provided with a conductive layer including at least a tungsten layer; forming a photoresist pattern by patterning the photoresist layer; forming a conductive pattern by etching the conductive layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern; and performing a cleaning process to the substrate provided with the conductive pattern by using a cleaning solution of a deionized water-based ammonia solution added with a surfactant and a chelating agent.

Abstract translation: 本发明提供了一种清洗溶液及其清洗方法，该半导体装置能够防止钨层从清洗液中的损伤和去除颗粒。 清洁溶液包括去离子水基氨溶液; 加入到氨溶液中的表面活性剂; 和加入到氨溶液中的螯合剂。 该方法包括以下步骤：在设置有至少包含钨层的导电层的基板的上部上沉积光致抗蚀剂层; 通过图案化光致抗蚀剂层形成光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻导电层来形成导电图案; 去除光致抗蚀剂图案; 以及通过使用加入表面活性剂和螯合剂的去离子水基氨溶液的清洗溶液，对设置有导电图案的基板进行清洗处理。

公开(公告)号：US06696338B2

公开(公告)日：2004-02-24

申请号：US10291626

申请日：2002-11-12

Applicant: Kee-Joon Oh ,  Geun-Min Choi

Inventor： Kee-Joon Oh ,  Geun-Min Choi

IPC: H01L218242

CPC classification number: H01L28/91 ,  H01L21/31133 ,  H01L21/32136 ,  H01L28/65

Abstract: Provided is a method for fabricating a capacitor of a semiconductor; and, more particularly, to a method for forming a Ru storage node of a capacitor that can form a stable storage node. The method includes the steps of: a method for forming a ruthenium (Ru) storage node of a semiconductor device, comprising the steps of: etching an insulation layer on a substrate and forming openings; depositing a Ru layer along the profile of the insulation layer and the openings; filling a photoresist in the openings; performing an etching process until the insulation layer between neighboring openings is exposed and forming isolated Ru storage nodes with the Ru layer in the openings; and removing photoresist and polymers with a solution including H2SO4 and H2O2.

Abstract translation: 提供一种制造半导体电容器的方法; 更具体地说，涉及形成可形成稳定存储节点的电容器的Ru存储节点的方法。 该方法包括以下步骤：形成半导体器件的钌（Ru）存储节点的方法，包括以下步骤：蚀刻衬底上的绝缘层并形成开口; 沿着绝缘层和开口的轮廓沉积Ru层; 在开口中填充光致抗蚀剂; 进行蚀刻工艺，直到相邻开口之间的绝缘层被暴露并且在开口中形成具有Ru层的隔离的Ru存储节点; 并用包括H 2 SO 4和H 2 O 2的溶液除去光致抗蚀剂和聚合物。