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    Method of manufacturing a thin-film transistor with reinforced drain and source electrodes
    8.
    发明授权
    Method of manufacturing a thin-film transistor with reinforced drain and source electrodes 失效
    制造具有加强漏极和源极的薄膜晶体管的方法

    公开(公告)号：US6050827A

    公开(公告)日：2000-04-18

    申请号：US4661

    申请日：1993-01-14

    申请人： Sadatoshi Takechi ,  Tadanori Hishida ,  Fumiaki Funada

    发明人： Sadatoshi Takechi ,  Tadanori Hishida ,  Fumiaki Funada

    IPC分类号： H01L29/78 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L29/66765 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78681 ,  Y10S438/944

    摘要： A thin film transistor where source and drain electrodes are film laminates including at least two layers. A first layer film of the laminate, which is formed to a thickness of 10 to 700 .ANG. is in ohmic contact with underlying semiconductor film. A second layer film, formed on the first layer film has a thickness of more than about 2000 .ANG. and is a material having a sufficient adhesion strength even when formed at a temperature which is less than the temperature corresponding to the materials vapor pressure. Further, the materials used for the source and drain electrodes can be formed into thin films by ordinary sputtering or vacuum deposition techniques, low in cost, and readily available. A thin film transistor according to the present invention is formed on a substrate by the steps of: forming a gate electrode on the substrate; oxidizing the gate electrode to form a gate insulating film, the gate electrode and the gate insulating film forming a step; forming a thin film semiconductor on the gate insulating film; forming a first layer film portion of a source and drain electrode film laminate on the thin film semiconductor and in ohmic contact with the thin film semiconductor; and forming a second layer film portion of the source and drain electrode film laminate, the second layer film being an adhesion layer, convering the first layer film, and having a sufficient thickness to provide a continuous film across the step.

    摘要翻译： 一种薄膜晶体管，其中源极和漏极是包括至少两个层的薄膜叠层。 形成为10至700厚度的层压体的第一层膜与下面的半导体膜欧姆接触。 形成在第一层膜上的第二层膜具有大于约2000的厚度，并且即使在低于对应于材料蒸气压的温度的温度下形成时，也具有足够的粘合强度的材料。 此外，用于源电极和漏电极的材料可以通过普通溅射或真空沉积技术形成为薄膜，成本低且易于获得。 根据本发明的薄膜晶体管通过以下步骤形成在衬底上：在衬底上形成栅电极; 氧化栅电极以形成栅极绝缘膜，栅电极和栅绝缘膜形成步骤; 在栅极绝缘膜上形成薄膜半导体; 在所述薄膜半导体上形成源极和漏极电极膜层叠体的第一层膜部分，并与所述薄膜半导体欧姆接触; 以及形成所述源极和漏极电极膜层压体的第二层膜部分，所述第二层膜是粘合层，使所述第一层膜会聚，并且具有足够的厚度以在所述台阶上提供连续的膜。

    Lighting device
    9.
    发明授权
    Lighting device 失效
    照明设备

    公开(公告)号：US4914553A

    公开(公告)日：1990-04-03

    申请号：US249222

    申请日：1988-09-22

    申请人： Hiroshi Hamada ,  Naofumi Kimura ,  Fumiaki Funada

    发明人： Hiroshi Hamada ,  Naofumi Kimura ,  Fumiaki Funada

    IPC分类号： G02F1/1335 ,  F21V8/00 ,  G02F1/133 ,  G02F1/13357 ,  G09F9/00

    CPC分类号： G02B6/0048

    摘要： The lighting device is equipped with a light guide having a linear Fresnel reflection surface consisting of steps of continuously alternating reflecting surfaces having two different reflection angles. A light source is installed at one end of the light guide of the above construction so that the light from the light source is emitted from the irradiation surface of the light guide after being reflected by the linear Fresnel reflection surface.

    摘要翻译： 照明装置配备有具有线性菲涅尔反射面的导光体，该反射面由具有两个不同反射角度的连续交替反射面的步骤组成。 光源安装在上述结构的光导的一端，使得来自光源的光在被线性菲涅耳反射面反射之后从导光体的照射面发射。