公开(公告)号：US5463248A

公开(公告)日：1995-10-31

申请号：US243864

申请日：1994-05-17

申请人： Keiichi Yano ,  Takashi Takahashi ,  Kazuo Kimura ,  Yoshitoshi Sato ,  Kouji Yamakawa ,  Toshishige Yamamoto ,  Masafumi Fujii ,  Shizuki Hashimoto ,  Hiroshi Takamichi

发明人： Keiichi Yano ,  Takashi Takahashi ,  Kazuo Kimura ,  Yoshitoshi Sato ,  Kouji Yamakawa ,  Toshishige Yamamoto ,  Masafumi Fujii ,  Shizuki Hashimoto ,  Hiroshi Takamichi

IPC分类号： H01L23/08 ,  H01L23/10 ,  H01L23/495 ,  H01L23/50 ,  H01L23/02 ,  H01L23/48

CPC分类号： H01L23/49582 ,  H01L23/10 ,  H01L24/48 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/30107 ,  H01L2924/351

摘要： A semiconductor package comprises an aluminum nitride substrate having a semiconductor element mounted thereon, a lead frame junctioned to the side of the aluminum nitride substrate directly contacting the mounted semiconductor element, and a ceramic sealing member junctioned to the aluminum nitride substrate so as to seal the semiconductor element. The lead frame has a coating layer of a nonmagnetic metallic material formed in a thickness of not more than 20 .mu.m on only one of the opposite surfaces of a lead frame matrix made of a ferromagnetic metal to which a bonding wire is to be junctioned. The layer of the nonmagnetic metallic material is formed by any of such thin film forming technique as the vacuum deposition technique, the spattering technique, and the plating technique. The coating layer formed on only one of the opposite surfaces of the lead frame matrix is capable of amply curbing the resistance and the dependency of inductance on frequency. The aluminum nitride substrate is capable of imparting an ideal ability to radiate heat. The semiconductor package enables a high-speed quality semiconductor element having such a high system clock frequency as is not less than 50 MHz to be operated stably.

摘要翻译： 半导体封装包括其上安装有半导体元件的氮化铝衬底，与直接接触安装的半导体元件的氮化铝衬底侧连接的引线框架和与氮化铝衬底结合的陶瓷密封构件，以密封 半导体元件。 引线框架具有非磁性金属材料的涂层，所述涂层的厚度不大于20μm，仅由引线框架矩阵的相反表面形成，所述引线框架矩阵由铁磁金属制成，所述引线框矩阵由所述铁磁金属连接。 非磁性金属材料层由真空沉积技术，溅射技术和电镀技术中的任何一种薄膜形成技术形成。 仅形成在引线框架矩阵的相对表面之一上的涂层能够充分地抑制电阻和电感对频率的依赖性。 氮化铝衬底能够赋予理想的辐射热能力。 半导体封装使得能够稳定地操作具有不低于50MHz的系统时钟频率的高速质量的半导体元件。