Magnetoresistance element
    1.
    发明授权
    Magnetoresistance element 失效
    磁阻元件

    公开(公告)号:US5432494A

    公开(公告)日:1995-07-11

    申请号:US67232

    申请日:1993-05-26

    CPC分类号: G01R33/09 H01L43/08

    摘要: A magnetoresistance element includes an insulating substrate, a patterned magnetoresistance film of a ferromagnetic material deposited thereon and having a uniaxis magnetic anisotropy, and a patterned hard biasing layer of a ferromagnetic material deposited on the substrate. The biasing layer is divided into two parts on both sides of the magnetoresistance layer and magnetized in the direction parallel to a line which intersects the easy direction of magnetization of the patterned magnetoresistance layer at an acute angle (.theta.).

    摘要翻译: 磁阻元件包括绝缘衬底,沉积在其上并具有单轴磁各向异性的铁磁材料的图案化磁阻膜,以及沉积在衬底上的铁磁材料的图案化的硬偏置层。 偏置层在磁阻层的两侧被分成两部分,并且以与锐角(θ)的图案化磁阻层的容易磁化方向相交的线平行的方向被磁化。