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公开(公告)号：US09761347B2
公开(公告)日：2017-09-12
申请号：US15083381
申请日：2016-03-29
Applicant: KEMET Electronics Corporation
Inventor： Yaru Shi , Antony P. Chacko , Hong Zhang , Qingping Chen , Randolph S. Hahn , Lei Xu , Yang Jin , Zhen Wu
CPC classification number: H01B1/127 , H01G9/0032 , H01G9/0036 , H01G9/028 , H01G9/0425 , H01G9/15 , Y10T29/417
Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying an amine, a weak acid and a conductive polymer.
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2.发明申请Process to improve coverage and electrical performance of solid electrolytic capacitor 有权提高固体电解电容器覆盖和电性能的工艺公开(公告)号：US20160211082A1
公开(公告)日：2016-07-21
申请号：US15083381
申请日：2016-03-29
Applicant: KEMET Electronics Corporation
Inventor： Yaru Shi , Antony P. Chacko , Hong Zhang , Qingping Chen , Randolph S. Hahn , Lei Xu , Yang Jin , Zhen Wu
CPC classification number: H01B1/127 , H01G9/0032 , H01G9/0036 , H01G9/028 , H01G9/0425 , H01G9/15 , Y10T29/417
Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying an amine, a weak acid and a conductive polymer.
Abstract translation: 描述形成电容器的方法，由此形成的电容器和用于导电涂层的改进的组合物。 该方法包括提供阳极，在阳极上形成电介质并通过施加胺，弱酸和导电聚合物在电介质上形成阴极层。
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3.发明授权Materials and method for improving corner and edge coverage of solid electrolytic capacitors 有权改善固体电解电容器拐角和边缘覆盖的材料和方法公开(公告)号：US09236191B2
公开(公告)日：2016-01-12
申请号：US14490981
申请日：2014-09-19
Applicant: Kemet Electronics Corporation
Inventor： Antony P. Chacko , Yang Jin , Randolph S. Hahn , Yongjian Qiu , Philip M. Lessner , Keith R. Brenneman
CPC classification number: H01G9/0032 , B05D1/185 , B82Y99/00 , H01G9/0036 , H01G9/028 , H01G9/0425 , H01G9/052 , H01G9/15 , Y10S977/948 , Y10T29/417 , Y10T29/43
Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer. Coverage enhancing catalyst is removed after coating and curing.
Abstract translation: 一种制备固体电解电容器的方法，包括应用覆盖增强催化剂，然后施加导电聚合物层。 涂层和固化后除去覆盖增强催化剂。
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公开(公告)号：US10109428B2
公开(公告)日：2018-10-23
申请号：US15672000
申请日：2017-08-08
Applicant: KEMET Electronics Corporation
Inventor： Yaru Shi , Antony P. Chacko , Hong Zhang , Qingping Chen , Lei Xu , Yang Jin , Zhen Wu
IPC: H01G9/042 , H01G9/15 , C09D5/24 , H01G9/00 , H01G9/012 , H01G9/07 , H01G9/025 , H01G9/028 , H01G9/052
Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.
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Patent Agency Ranking
公开(公告)号：US20180211788A1
公开(公告)日：2018-07-26
申请号：US15897276
申请日：2018-02-15
Applicant: KEMET Electronics Corporation
Inventor： Yang Jin , Qingping Chen
CPC classification number: C23C28/00 , C07D409/14 , C08G75/06 , C25B3/00 , H01G9/0425 , H01G9/15
Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.
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6.发明申请Materials and Method for Improving Corner and Edge Coverage of Solid Electrolytic Capacitors 有权改善固体电解电容器角点和边缘覆盖的材料和方法公开(公告)号：US20150135496A1
公开(公告)日：2015-05-21
申请号：US14490981
申请日：2014-09-19
Applicant: Kemet Electronics Corporation
Inventor： Antony P. Chacko , Yang Jin , Randolph S. Hahn , Yongjian Qiu , Philip M. Lessner , Keith R. Brenneman
CPC classification number: H01G9/0032 , B05D1/185 , B82Y99/00 , H01G9/0036 , H01G9/028 , H01G9/0425 , H01G9/052 , H01G9/15 , Y10S977/948 , Y10T29/417 , Y10T29/43
Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer. Coverage enhancing catalyst is removed after coating and curing.
Abstract translation: 一种制备固体电解电容器的方法，包括应用覆盖增强催化剂，然后施加导电聚合物层。 涂层和固化后除去覆盖增强催化剂。
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公开(公告)号：US10570520B2
公开(公告)日：2020-02-25
申请号：US15897276
申请日：2018-02-15
Applicant: KEMET Electronics Corporation
Inventor： Yang Jin , Qingping Chen
Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.
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公开(公告)号：US09928964B1
公开(公告)日：2018-03-27
申请号：US14470319
申请日：2014-08-27
Applicant: Kemet Electronics Corporation
Inventor： Yang Jin , Qingping Chen
CPC classification number: H01G9/0032 , C07D409/14 , C08G75/06 , C23C28/00 , C25B3/00 , H01G4/00 , H01G11/00 , H01G2009/0014
Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.
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9.发明申请公开(公告)号：US20170338048A1
公开(公告)日：2017-11-23
申请号：US15672000
申请日：2017-08-08
Applicant: KEMET Electronics Corporation
Inventor： Yaru Shi , Antony P. Chacko , Hong Zhang , Qingping Chen , Lei Xu , Yang Jin , Zhen Wu
CPC classification number: H01G9/042 , C09D5/24 , H01G9/0032 , H01G9/0036 , H01G9/012 , H01G9/025 , H01G9/028 , H01G9/052 , H01G9/07 , H01G9/15
Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.
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