Honeycomb structure and method of using the structure
    1.
    发明授权
    Honeycomb structure and method of using the structure 失效
    蜂窝结构和使用结构的方法

    公开(公告)号:US08385041B2

    公开(公告)日:2013-02-26

    申请号:US12524428

    申请日:2008-01-25

    CPC classification number: H01G4/00 B03C3/08 B03C3/38 B03C3/49 H01T23/00

    Abstract: A method of using honeycomb material having opposite surfaces and flow channels between the surfaces, includes directing fluid flow through the channels while applying a voltage between the surfaces and across fluid flowing in the channels. A method of using honeycomb material that includes at least one electrode, the honeycomb material and electrode be useful in an electrical or electronic device, includes using the honeycomb material to support or to suspend the electrical or electronic device. An apparatus includes a honeycomb structure of dielectric material having a number of flow channels therethrough, an electrode at a surface of the dielectric material responsive to electrical input to apply an electrical response alone or with regard to another electrode, the honeycomb structure having cohesive strength and rigidity to support itself and the electrode from in suspended relation.

    Abstract translation: 使用在表面之间具有相对表面和流动通道的蜂窝材料的方法包括引导流体流过通道,同时在表面之间施加电压并且跨过在通道中流动的流体。 使用包括至少一个电极,蜂窝材料和电极用于电气或电子设备的蜂窝材料的方法包括使用蜂窝体材料来支撑或悬挂电气或电子设备。 一种装置包括具有穿过其中的多个流动通道的电介质材料的蜂窝状结构,电介质材料的表面上的电极响应于电输入以单独地或相对于另一个电极施加电响应,所述蜂窝结构体具有内聚强度, 刚性支撑自身和电极悬浮关系。

    Apparatus for a crater-style capacitor for high-voltage
    3.
    发明授权
    Apparatus for a crater-style capacitor for high-voltage 失效
    用于高电压的火山口式电容器的装置

    公开(公告)号:US6081415A

    公开(公告)日:2000-06-27

    申请号:US181409

    申请日:1998-10-28

    Abstract: The invention relates to an apparatus for a crater-style sampling capacitor. The apparatus includes a dielectric having a smooth crater shaped input electrode on a first surface and output and guard electrodes on a second surface. A sampling capacitor is defined by the input and output electrodes, and a guard capacitor is defined by the input and guard electrodes. The edge of input electrode is positioned below the first surface to increase surface flash over voltage, further, the input electrode is curved to eliminate corona discharge at edges of the input electrode and to reduce self-heating to negligible levels. The apparatus is suitable for high-voltage radio-frequency applications, such as a mass spectrometer, or other high-voltage applications that require an accurate sampling capacitor for amplitude control and accurate sampling of radio-frequency waveforms.

    Abstract translation: 本发明涉及一种用于火山口式采样电容器的装置。 该装置包括在第一表面上具有平滑的凹坑形输入电极的电介质,并在第二表面上输出和保护电极。 采样电容器由输入和输出电极定义,保护电容由输入和保护电极限定。 输入电极的边缘位于第一表面下方以增加表面闪光过电压,此外,输入电极是弯曲的,以消除输入电极边缘处的电晕放电,并将自加热降低到可忽略的水平。 该装置适用于需要精确采样电容器进行幅度控制和射频波形精确采样的高压射频应用,如质谱仪或其他高压应用。

    Low passive inter-modulation capacitor
    6.
    发明授权
    Low passive inter-modulation capacitor 有权
    低无源互调电容器

    公开(公告)号:US08742869B2

    公开(公告)日:2014-06-03

    申请号:US13049343

    申请日:2011-03-16

    Applicant: Rafi Hershtig

    Inventor: Rafi Hershtig

    Abstract: A high power, low passive inter-modulation capacitor is presented, which is formed using metal clad substrates, which are broad-side coupled through a thin air gap. Each substrate may include metal layers affixed on both sides which are electrical coupled together to form a single capacitor plate, or each substrate may have only a single metal layer on the surface adjacent to the air gap. The capacitor has particular application in low cost RF and microwave filters, which may be used in communication equipment and communication test equipment such a diplexers, for low PIM applications.

    Abstract translation: 提出了一种高功率,低无源互调电容器,其使用金属覆层基板形成,其通过薄的气隙广泛耦合。 每个基板可以包括固定在两侧的金属层,其电耦合在一起以形成单个电容器板,或者每个基板可以在邻近气隙的表面上仅具有单个金属层。 该电容器在低成本RF和微波滤波器中具有特殊应用,可用于通信设备和通信测试设备(如双工器),用于低PIM应用。

    Free form capacitor
    7.
    发明授权
    Free form capacitor 失效
    自由形式电容器

    公开(公告)号:US06453527B1

    公开(公告)日:2002-09-24

    申请号:US09438347

    申请日:1999-11-11

    Applicant: Frank A. Duva

    Inventor: Frank A. Duva

    CPC classification number: H01G4/00 H05K3/303 Y10T29/435

    Abstract: A variable, free form shaped capacitor structure formed by casting tape on a belt casting machine, screen printing the tape with thick film metal ink, pressing and curing the printed tape stack, laminating the printed stack, and cutting a free form nonsymmetrical capacitor outline based on the shape of the item in which the capacitor will be stored. The free form capacitor can be cut using a variety of cutting devices, including, a routing machine, a razor blade, a water jet, or a laser. The outline can comprise any shape, including straight lines, angles, convex or concave geometry. Additionally, the various geometrical shapes can exist simultaneously within the same capacitor structure. Upon achievement of the desired shape, ceramic sintering is performed to form a single monolithic capacitor structure.

    Abstract translation: 一种可变的自由形状的电容器结构,通过在带式铸造机上铸造胶带形成,用厚膜金属油墨丝网印刷胶带,压制和固化印刷的胶带堆叠,层压印刷的叠层,以及切割自由形式的非对称电容器轮廓 关于电容器将被存储的项目的形状。 可以使用各种切割装置切割自由形式的电容器,包括路由机,剃刀刀片,水射流或激光。 轮廓可以包括任何形状,包括直线,角度,凸或凹几何形状。 此外,各种几何形状可以同时存在于相同的电容器结构内。 在实现所需形状时,进行陶瓷烧结以形成单个单片电容器结构。

    Method for the electrical bonding of thin film tantalum capacitor
networks to other networks
    8.
    发明授权
    Method for the electrical bonding of thin film tantalum capacitor networks to other networks 失效
    薄膜钽电容网络与其他网络电接合的方法

    公开(公告)号:US4227300A

    公开(公告)日:1980-10-14

    申请号:US943151

    申请日:1978-09-18

    Abstract: A method for electrically bonding tantalum thin film capacitor networks to other networks is described. A first non-conducting support member has a thin film tantalum capacitor mounted thereon. A second non-conducting support member has another component such as a resistor mounted thereon. The two non-conducting support members are placed in a back-to-back position so that the thin film tantalum capacitor and the other component are remote from each other. These two non-conducting support members are then bound together and dipped into a molten solder bath to form a solder coating on the metal elements of the completed network.

    Abstract translation: 描述了将钽薄膜电容器网络电连接到其他网络的方法。 第一非导电支撑构件具有安装在其上的薄膜钽电容器。 第二非导电支撑构件具有安装在其上的诸如电阻器的另一部件。 两个非导电支撑构件被放置在背对背位置,使得薄膜钽电容器和另一个部件彼此远离。 然后将这两个非导电支撑构件结合在一起并浸入熔融焊料浴中,以在完成的网络的金属元件上形成焊料涂层。

Patent Agency Ranking