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    Multi-step plasma treatment method to improve CU interconnect electrical performance
    1.
    发明授权
    Multi-step plasma treatment method to improve CU interconnect electrical performance 有权
    多级等离子处理方法提高CU互连电气性能

    公开(公告)号：US07094705B2

    公开(公告)日：2006-08-22

    申请号：US10762186

    申请日：2004-01-20

    申请人： Keng-Chu Lin ,  Hui-Lin Chang ,  I-I Chen ,  Yung-Chen Lu ,  Syun-Ming Jeng

    发明人： Keng-Chu Lin ,  Hui-Lin Chang ,  I-I Chen ,  Yung-Chen Lu ,  Syun-Ming Jeng

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76888 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/7684

    摘要： A method for plasma treating an exposed copper surface and dielectric insulating layer in a semiconductor device manufacturing process including providing a semiconductor wafer having a process surface including an exposed copper portion and an exposed dielectric insulating layer portion; plasma treating in a first plasma treatment process, the process surface with a first plasma including ammonia (NH3) and nitrogen (N2) plasma to form a copper nitride layer overlying the exposed copper portion; and, plasma treating in a second plasma treatment process the process surface with a second plasma including oxygen (O2).

    摘要翻译： 一种在半导体器件制造工艺中等离子体处理暴露的铜表面和介电绝缘层的方法，包括提供具有包括暴露的铜部分和暴露的介电绝缘层部分的工艺表面的半导体晶片; 在第一等离子体处理过程中进行等离子体处理，所述工艺表面具有包含氨（NH 3）3和氮（N 2 O 3）等离子体的第一等离子体，以形成覆盖的氮化铜层 暴露的铜部分; 以及在第二等离子体处理过程中进行等离子体处理，所述工艺表面具有包含氧（O 2 O 2）的第二等离子体。

    Method for recycling semiconductor wafers having carbon doped low-k dielectric layers
    2.
    发明授权
    Method for recycling semiconductor wafers having carbon doped low-k dielectric layers 失效
    回收具有碳掺杂低k电介质层的半导体晶片的方法

    公开(公告)号：US06693047B1

    公开(公告)日：2004-02-17

    申请号：US10324532

    申请日：2002-12-19

    申请人： Chih-Cheng Lu ,  Wen Chang ,  Syun-Ming Jeng

    发明人： Chih-Cheng Lu ,  Wen Chang ,  Syun-Ming Jeng

    IPC分类号： H01L2131

    CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633

    摘要： A method for removing at least one carbon doped oxide layer over a surface to recycle the semiconductor process wafer including providing a semiconductor wafer including a process surface including at least one carbon doped silicon oxide layer; oxidizing the carbon doped oxide layer according to an oxidizing treatment to convert at oxidize at least a portion of the carbon doped oxide layer to produce silicon oxide; and, wet etching the silicon oxide to substantially remove the silicon oxide.

    摘要翻译： 一种用于在表面上去除至少一个碳掺杂氧化物层以再循环半导体工艺晶片的方法，包括提供包括至少一个碳掺杂氧化硅层的工艺表面的半导体晶片; 根据氧化处理氧化碳掺杂的氧化物层以在氧化至少一部分碳掺杂的氧化物层以转化以产生氧化硅; 并湿法蚀刻氧化硅以基本上去除氧化硅。