公开(公告)号：US08618823B2

公开(公告)日：2013-12-31

申请号：US13006325

申请日：2011-01-13

申请人： Kenichi Tada ,  Koki Tsutsumida ,  Masatoshi Kawashima ,  Hideki Hayashi ,  Tsutomu Sato ,  Koichi Sugimoto

发明人： Kenichi Tada ,  Koki Tsutsumida ,  Masatoshi Kawashima ,  Hideki Hayashi ,  Tsutomu Sato ,  Koichi Sugimoto

IPC分类号： G01R31/28

CPC分类号： G01R31/318594 ,  G01R31/318552

摘要： A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.

摘要翻译： 半导体器件被设计为便于分析采用多相时钟的集成电路的故障的位置和原因。 为此，半导体器件设置有检测在集成电路中发生操作问题的错误检测单元，时钟状态保持单元，其保持预定项中的相位信息为两维或多次， 相位时钟和输出单元，当错误检测单元检测到集成电路中发生操作的问题时，输出两相或更多相位时钟的预定项中的相位的信息。

公开(公告)号：US20110204908A1

公开(公告)日：2011-08-25

申请号：US13006325

申请日：2011-01-13

申请人： Kenichi Tada ,  Koki Tsutsumida ,  Masatoshi Kawashima ,  Hideki Hayashi ,  Tsutomu Sato ,  Koichi Sugimoto

发明人： Kenichi Tada ,  Koki Tsutsumida ,  Masatoshi Kawashima ,  Hideki Hayashi ,  Tsutomu Sato ,  Koichi Sugimoto

IPC分类号： G01R31/3187

CPC分类号： G01R31/318594 ,  G01R31/318552

摘要： A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.

摘要翻译： 半导体器件被设计为便于分析采用多相时钟的集成电路的故障的位置和原因。 为此，半导体器件设置有检测在集成电路中发生操作问题的错误检测单元，时钟状态保持单元，其保持预定项中的相位信息为两维或多次， 相位时钟和输出单元，当错误检测单元检测到集成电路中发生操作的问题时，输出两相或更多相位时钟的预定项中的相位的信息。

公开(公告)号：USD516907S1

公开(公告)日：2006-03-14

申请号：US29186227

申请日：2003-07-14

申请人： Kenichi Tada

设计人： Kenichi Tada

公开(公告)号：US06723871B2

公开(公告)日：2004-04-20

申请号：US10142983

申请日：2002-05-13

申请人： Kenichi Tada ,  Takashi Miura

发明人： Kenichi Tada ,  Takashi Miura

IPC分类号： C07C6966

CPC分类号： C07C67/31 ,  C07C69/675

摘要： A novel production process capable of obtaining an optically active alcohol in a high optical purity by subjecting a &bgr;-keto ester such as a 3-perfluoroalkyl-3-oxopropionate ester or a 3-trichloroalkyl-3-oxopropionate ester to asymmetric reduction in simple and convenient operations.

摘要翻译： 一种能够通过使3-酮基酯如3-全氟烷基-3-氧代丙酸酯或3-三氯烷基-3-氧代丙酸酯通过使简单且不饱和的不对称还原得到高光学纯度的光学活性醇的新型制备方法 方便操作。

公开(公告)号：US5374849A

公开(公告)日：1994-12-20

申请号：US26672

申请日：1993-03-01

申请人： Kenichi Tada

发明人： Kenichi Tada

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L23/522 ,  H01L27/10 ,  H01L27/108 ,  H01L29/43 ,  H01L29/40 ,  H01L29/60 ,  H01L29/62

CPC分类号： H01L21/76849 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/485 ,  H01L2924/0002

摘要： A difference in level between a tungsten film and a barrier metal film is inevitably caused by the formation of barrier metal film and tungsten film in a through-hole. A tungsten film is formed to eliminate this difference in level. Tungsten film is embedded in an opening region surrounded by the sidewall of through-hole, an upper surface of barrier metal film and an upper surface of tungsten film. Therefore, the connection between an aluminum film and tungsten film cannot be broken by the expansion of the air in the space portion even through the step involving heat treatment.

摘要翻译： 通过在通孔中形成阻挡金属膜和钨膜，不可避免地导致钨膜与阻挡金属膜之间的水平差。 形成钨膜以消除该水平的差异。 钨膜嵌入由通孔的侧壁，阻挡金属膜的上表面和钨膜的上表面包围的开口区域中。 因此，即使通过热处理的步骤，铝膜和钨膜之间的连接也不会被空间部分中的空气膨胀所破坏。