公开(公告)号：US20050201018A1

公开(公告)日：2005-09-15

申请号：US11067643

申请日：2005-02-28

申请人： Kentaro Nagai ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Satoshi Miura

发明人： Kentaro Nagai ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Satoshi Miura

IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

摘要： A magnetic head is provided for further improving a correlation between the dynamic characteristics and static characteristics. A lower magnetic shield layer, a magneto-resistive layer, and an upper magnetic shield layer are laminated on a base in this order. A lower lead layer and an upper lead layer apply a sense current to the magneto-resistive layer in a direction substantially perpendicular to the film plane thereof through the magnetic shield layers. The lower magnetic shield layer and upper magnetic shield layer have their shapes and sizes which substantially exactly overlap each other, when viewed in a laminating direction. The lower lead layer is electrically connected to the lower magnetic shield layer. At least a portion of the lower lead layer closer to the lower magnetic shield layer is made of a non-magnetic conductive material. The upper lead layer is electrically connected to the upper magnetic shield layer. At least a portion of the upper lead layer closer to the upper magnetic shield layer is made of a non-magnetic conductive material.

摘要翻译： 提供磁头用于进一步改善动态特性和静态特性之间的相关性。 下部磁屏蔽层，磁阻层和上部磁屏蔽层依次层压在基座上。 下引线层和上引线层通过磁屏蔽层在大致垂直于其膜平面的方向上向磁阻层施加感测电流。 当从层叠方向观察时，下磁屏蔽层和上磁屏蔽层具有基本精确地彼此重叠的形状和尺寸。 下引线层电连接到下磁屏蔽层。 下引线层的更靠近下磁屏蔽层的至少一部分由非磁性导电材料制成。 上引线层电连接到上磁屏蔽层。 上导电层的至少一部分靠近上磁屏蔽层由非磁性导电材料制成。

公开(公告)号：US07489481B2

公开(公告)日：2009-02-10

申请号：US11067643

申请日：2005-02-28

申请人： Kentaro Nagai ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Satoshi Miura

发明人： Kentaro Nagai ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Satoshi Miura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

摘要： A magnetic head is provided for further improving a correlation between the dynamic characteristics and static characteristics. A lower magnetic shield layer, a magneto-resistive layer, and an upper magnetic shield layer are laminated on a base in this order. A lower lead layer and an upper lead layer apply a sense current to the magneto-resistive layer in a direction substantially perpendicular to the film plane thereof through the magnetic shield layers. The lower magnetic shield layer and upper magnetic shield layer have their shapes and sizes which substantially exactly overlap each other, when viewed in a laminating direction. The lower lead layer is electrically connected to the lower magnetic shield layer. At least a portion of the lower lead layer closer to the lower magnetic shield layer is made of a non-magnetic conductive material. The upper lead layer is electrically connected to the upper magnetic shield layer. At least a portion of the upper lead layer closer to the upper magnetic shield layer is made of a non-magnetic conductive material.

摘要翻译： 提供磁头用于进一步改善动态特性和静态特性之间的相关性。 下部磁屏蔽层，磁阻层和上部磁屏蔽层依次层压在基座上。 下引线层和上引线层通过磁屏蔽层在大致垂直于其膜平面的方向上向磁阻层施加感测电流。 当从层叠方向观察时，下磁屏蔽层和上磁屏蔽层具有基本精确地彼此重叠的形状和尺寸。 下引线层电连接到下磁屏蔽层。 下引线层的更靠近下磁屏蔽层的至少一部分由非磁性导电材料制成。 上引线层电连接到上磁屏蔽层。 上导电层的至少一部分靠近上磁屏蔽层由非磁性导电材料制成。

公开(公告)号：US07436633B2

公开(公告)日：2008-10-14

申请号：US11205072

申请日：2005-08-17

申请人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

发明人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

IPC分类号： G11B5/245

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/4826 ,  G11B2005/3996

摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.

摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

公开(公告)号：US07573675B2

公开(公告)日：2009-08-11

申请号：US11374167

申请日：2006-03-14

申请人： Naoki Ohta ,  Kazuki Sato ,  Noriaki Kasahara ,  Takeo Kagami

发明人： Naoki Ohta ,  Kazuki Sato ,  Noriaki Kasahara ,  Takeo Kagami

IPC分类号： G11B5/31

CPC分类号： G11B5/3932 ,  G11B5/3967

摘要： A thin film magnetic head has an air bearing surface and comprises magnetic shield layers, an MR element, bias-applying layers, and a hard magnetic layer. Each of the magnetic shield layers has an end face forming the air bearing surface, and an end face located opposite to the end face. The MR element is located between the magnetic shield layers and on the end face side. The bias-applying layers are located between the magnetic shield layers and are arranged to apply a bias magnetic field to the MR element. The hard magnetic layer is located between the magnetic shield layers and on the end face side. A height of the hard magnetic layer is larger than ⅓ and smaller than ½ of a height of each magnetic shield layer.

摘要翻译： 薄膜磁头具有空气轴承表面并且包括磁屏蔽层，MR元件，偏置施加层和硬磁性层。 每个磁屏蔽层具有形成空气轴承表面的端面和与端面相对的端面。 MR元件位于磁屏蔽层之间和端面侧。 偏置施加层位于磁屏蔽层之间并被布置成向MR元件施加偏置磁场。 硬磁性层位于磁屏蔽层之间和端面侧。 硬磁性层的高度大于1/3且小于每个磁屏蔽层的高度的1/2。

公开(公告)号：US20060209470A1

公开(公告)日：2006-09-21

申请号：US11374167

申请日：2006-03-14

申请人： Naoki Ohta ,  Kazuki Sato ,  Noriaki Kasahara ,  Takeo Kagami

发明人： Naoki Ohta ,  Kazuki Sato ,  Noriaki Kasahara ,  Takeo Kagami

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/3967

摘要： A thin film magnetic head has an air bearing surface and comprises magnetic shield layers, an MR element, bias-applying layers, and a hard magnetic layer. Each of the magnetic shield layers has an end face forming the air bearing surface, and an end face located opposite to the end face. The MR element is located between the magnetic shield layers and on the end face side. The bias-applying layers are located between the magnetic shield layers and are arranged to apply a bias magnetic field to the MR element. The hard magnetic layer is located between the magnetic shield layers and on the end face side. A height of the hard magnetic layer is larger than ⅓ and smaller than ½ of a height of each magnetic shield layer.

公开(公告)号：US20060082929A1

公开(公告)日：2006-04-20

申请号：US11205072

申请日：2005-08-17

申请人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

发明人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/4826 ,  G11B2005/3996

摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.

摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

公开(公告)号：US20070035886A1

公开(公告)日：2007-02-15

申请号：US11500311

申请日：2006-08-08

申请人： Takeo Kagami ,  Naoki Ohta ,  Kazuki Sato ,  Satoshi Miura

发明人： Takeo Kagami ,  Naoki Ohta ,  Kazuki Sato ,  Satoshi Miura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/112 ,  G11B5/3912 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49044

摘要： A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.

摘要翻译： 隧道磁阻元件包括：包括反铁磁层，钉扎层，阻挡层和自由层的隧道磁阻膜; 以及相对于层叠方向设置在隧道磁阻膜下方的下磁屏蔽膜。 阻挡层由氧化镁构成。 下磁屏蔽膜具有多层结构，其包括结晶层和相对于层叠方向设置在结晶层上方的非晶层。 结晶层含有至少一种晶粒尺寸为500nm以上的晶粒。

公开(公告)号：US07652854B2

公开(公告)日：2010-01-26

申请号：US11500311

申请日：2006-08-08

申请人： Takeo Kagami ,  Naoki Ohta ,  Kazuki Sato ,  Satoshi Miura

发明人： Takeo Kagami ,  Naoki Ohta ,  Kazuki Sato ,  Satoshi Miura

IPC分类号： G11B5/33

CPC分类号： G11B5/3116 ,  G11B5/112 ,  G11B5/3912 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49044

摘要： A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.

摘要翻译： 隧道磁阻元件包括：包括反铁磁层，钉扎层，阻挡层和自由层的隧道磁阻膜; 以及相对于层叠方向设置在隧道磁阻膜下方的下磁屏蔽膜。 阻挡层由氧化镁构成。 下磁屏蔽膜具有多层结构，其包括结晶层和相对于层叠方向设置在结晶层上方的非晶层。 结晶层含有至少一种晶粒尺寸为500nm以上的晶粒。

公开(公告)号：US07398591B2

公开(公告)日：2008-07-15

申请号：US10971113

申请日：2004-10-25

申请人： Takeo Kagami ,  Takayasu Kanaya ,  Noriaki Kasahara ,  Kazuki Sato

发明人： Takeo Kagami ,  Takayasu Kanaya ,  Noriaki Kasahara ,  Kazuki Sato

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/332 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： The present invention relates to a manufacturing method of a thin-film magnetic head whereby re-deposition and an overlapped part in a region of a magnetoresistive effect multi-layered structure opposite to an air bearing surface can be removed and also a width of a free layer can be narrowed.

摘要翻译： 薄膜磁头的制造方法技术领域本发明涉及一种薄膜磁头的制造方法，其中可以除去与空气轴承表面相对的磁阻效应多层结构的区域中的再沉积和重叠部分， 层可以变窄。

公开(公告)号：US07190559B2

公开(公告)日：2007-03-13

申请号：US10652517

申请日：2003-09-02

申请人： Takeo Kagami ,  Noriaki Kasahara

发明人： Takeo Kagami ,  Noriaki Kasahara

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/4806 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/3996

摘要： In the thin-film magnetic head of the present invention, the length of each of a pinned layer and an antiferromagnetic layer in their contact area in the depth direction from a surface facing a medium is longer than the length of a free layer in the same direction. When the length of the pinned layer in the depth direction is set longer as such, the direction of magnetization of the pinned layer can be restrained from being tilted by disturbances. Also, the pinned layer and the antiferromagnetic layer have the same length in their contact area in the MR height direction, so that the pinned layer is in contact with the antiferromagnetic layer throughout its length in the MR height direction, thus raising the exchange coupling force, whereby the inclination in the direction of magnetization can be suppressed more effectively.

摘要翻译： 在本发明的薄膜磁头中，从面向介质的表面的深度方向的接触面积中的被钉扎层和反铁磁性层的长度比同一层的自由层的长度长 方向。 当钉扎层的深度方向的长度设定得更长时，可以抑制被钉扎层的磁化方向被扰动倾斜。 此外，钉扎层和反铁磁层在其MR高度方向上的接触面积上具有相同的长度，使得钉扎层在MR高度方向上的整个长度上与反铁磁层接触，从而提高交换耦合力 从而能够更有效地抑制磁化方向的倾斜。