公开(公告)号：US5536317A

公开(公告)日：1996-07-16

申请号：US549133

申请日：1995-10-27

申请人： Kermit Crain ,  John Wary ,  Roger A. Olson ,  William F. Beach

发明人： Kermit Crain ,  John Wary ,  Roger A. Olson ,  William F. Beach

IPC分类号： C08G61/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/46 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/463 ,  C08G61/025 ,  C23C16/4412 ,  C23C16/4485 ,  C23C16/452 ,  C23C16/46 ,  C23C16/52 ,  C08G2261/3424

摘要： A parylene deposition apparatus includes a quartz crystal thickness/rate controller for controlling the deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The crystal is located within the deposition chamber to receive a coating of parylene consistent with that of the substrate being coated. The vaporization chamber of the apparatus includes a heat transfer receptacle for receiving parylene dimer to be vaporized. The heat transfer receptacle includes heating and cooling devices to control the temperature thereof. In operation, parylene monomer deposits onto the surface of the crystal during deposition thereby varying the vibration frequency of the crystal. The rate of change in frequency can be directly correlated with the rate of monomer deposition. The crystal is associated with a microcontroller and set-point comparator, and further with the heating and cooling elements of the vaporization chamber to effectively monitor the thickness of the parylene coating during deposition, and control the rate of vaporization of the dimer.

摘要翻译： 聚对二甲苯沉积装置包括石英晶体厚度/速率控制器，用于在生产半导体芯片时控制聚对二甲苯AF4沉积在硅晶片上。 晶体位于沉积室内以接收与被涂覆的基底的涂层一致的聚对二甲苯涂层。 该装置的蒸发室包括用于接收要蒸发的聚对二甲苯二聚物的传热容器。 传热容器包括用于控制其温度的加热和冷却装置。 在操作中，聚对二甲苯单体在沉积期间沉积到晶体的表面上，从而改变晶体的振动频率。 频率变化率可以与单体沉积速率直接相关。 该晶体与微控制器和设定点比较器相关联，并且还与蒸发室的加热和冷却元件相关联以在沉积期间有效地监测聚对二甲苯涂层的厚度，并且控制二聚体的汽化速率。