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13 条记录 (耗时 0.018 秒)

    Method and apparatus for cryogenically cooling a deposition chamber
    1.
    发明授权
    Method and apparatus for cryogenically cooling a deposition chamber 失效
    用于低温冷却沉积室的方法和装置

    公开(公告)号：US5806319A

    公开(公告)日：1998-09-15

    申请号：US816295

    申请日：1997-03-13

    申请人： John Wary ,  Roger A. Olson ,  William F. Beach ,  Walter Swanson

    发明人： John Wary ,  Roger A. Olson ,  William F. Beach ,  Walter Swanson

    IPC分类号： B05D7/24 ,  C23C14/54 ,  B01D8/00

    CPC分类号： B05D1/60 ,  C23C14/541 ,  Y10S417/901

    摘要： A method and apparatus for depositing parylene monomer within the interior of a deposition chamber of a parylene deposition system. In certain embodiments, the method comprises the steps of: (a) introducing a cryogenic fluid into the interior of the deposition chamber to cool the surface of the substrate; and (b) introducing the parylene monomer into the interior of the chamber to deposit the parylene monomer onto the surface of the substrate. In some embodiments, the apparatus comprises: a deposition chamber; a pumping system, a source of cryogenic fluid, a gas source and at least one support mount disposed within the interior of the deposition chamber. The pumping system reduces the pressure of the interior of the deposition chamber, and the pumping system is in fluid communication with the interior of the deposition chamber. The source of cryogenic fluid is in fluid communication with the interior of the deposition chamber. The gas source is in fluid communication with the interior of the deposition chamber. Optionally, the method or apparatus may include the use of a load lock chamber.

    摘要翻译： 一种在聚对二甲苯沉积系统的沉积室的内部沉积聚对二甲苯单体的方法和设备。 在某些实施方案中，该方法包括以下步骤：（a）将低温流体引入沉积室的内部以冷却基底的表面; 和（b）将聚对二甲苯单体引入室的内部以将聚对二甲苯单体沉积在基材的表面上。 在一些实施例中，该装置包括：沉积室; 泵送系统，低温流体源，气体源和设置在沉积室内部的至少一个支撑安装座。 泵送系统降低沉积室内部的压力，并且泵送系统与沉积室的内部流体连通。 低温流体的源与沉积室的内部流体连通。 气源与沉积室的内部流体连通。 可选地，该方法或装置可以包括使用负载锁定室。

    Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
    2.
    发明授权
    Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers 失效
    将聚对二甲苯AF4沉积到半导体晶片上的方法和装置

    公开(公告)号：US5538758A

    公开(公告)日：1996-07-23

    申请号：US549087

    申请日：1995-10-27

    申请人： William F. Beach ,  Roger A. Olson ,  John Wary

    发明人： William F. Beach ,  Roger A. Olson ,  John Wary

    IPC分类号： B05D7/24 ,  C08G61/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/46 ,  C23C16/52 ,  C23C16/00

    CPC分类号： C23C16/463 ,  B05D1/60 ,  C08G61/025 ,  C23C16/4412 ,  C23C16/4485 ,  C23C16/46 ,  C23C16/52 ,  C08G2261/3424

    摘要： Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer to a temperature below 0.degree. C., creating an inert atmosphere around the apparatus, creating sub-atmospheric pressure conditions around the wafer while maintaining the inert external atmosphere, and depositing a predetermined thickness of the parylene AF4 polymer onto the wafer. The method further includes the steps of heating the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions, and may still further include the steps of further heating the wafer to a predetermined annealing temperature, and the cooling the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions.

    摘要翻译： 提供化学气相沉积装置，用于在生产半导体芯片时快速有效地将Parylene AF4沉积到硅晶片上。 将聚对二甲苯AF4沉积在半导体晶片的表面上的方法包括将半导体芯片晶片冷却至低于0℃的温度，在设备周围产生惰性气氛，在晶片周围产生次大气压力条件，同时保持惰性外部 气氛，并将预定厚度的聚对二甲苯AF4聚合物沉积在晶片上。 该方法还包括以下步骤：在从亚大气压条件移除晶片之前将晶片加热回到室温，并且还可以进一步包括将晶片进一步加热至预定退火温度的步骤，并将晶片冷却回 在从低于大气压的条件移除晶片之前，将温度升至室温。

    Parylene deposition apparatus including a quartz crystal thickness/rate controller
    4.
    发明授权
    Parylene deposition apparatus including a quartz crystal thickness/rate controller 失效
    Parylene沉积设备包括石英晶体厚度/速率控制器

    公开(公告)号：US5536317A

    公开(公告)日：1996-07-16

    申请号：US549133

    申请日：1995-10-27

    申请人： Kermit Crain ,  John Wary ,  Roger A. Olson ,  William F. Beach

    发明人： Kermit Crain ,  John Wary ,  Roger A. Olson ,  William F. Beach

    IPC分类号： C08G61/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/46 ,  C23C16/52 ,  C23C16/00

    CPC分类号： C23C16/463 ,  C08G61/025 ,  C23C16/4412 ,  C23C16/4485 ,  C23C16/452 ,  C23C16/46 ,  C23C16/52 ,  C08G2261/3424

    摘要： A parylene deposition apparatus includes a quartz crystal thickness/rate controller for controlling the deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The crystal is located within the deposition chamber to receive a coating of parylene consistent with that of the substrate being coated. The vaporization chamber of the apparatus includes a heat transfer receptacle for receiving parylene dimer to be vaporized. The heat transfer receptacle includes heating and cooling devices to control the temperature thereof. In operation, parylene monomer deposits onto the surface of the crystal during deposition thereby varying the vibration frequency of the crystal. The rate of change in frequency can be directly correlated with the rate of monomer deposition. The crystal is associated with a microcontroller and set-point comparator, and further with the heating and cooling elements of the vaporization chamber to effectively monitor the thickness of the parylene coating during deposition, and control the rate of vaporization of the dimer.

    摘要翻译： 聚对二甲苯沉积装置包括石英晶体厚度/速率控制器，用于在生产半导体芯片时控制聚对二甲苯AF4沉积在硅晶片上。 晶体位于沉积室内以接收与被涂覆的基底的涂层一致的聚对二甲苯涂层。 该装置的蒸发室包括用于接收要蒸发的聚对二甲苯二聚物的传热容器。 传热容器包括用于控制其温度的加热和冷却装置。 在操作中，聚对二甲苯单体在沉积期间沉积到晶体的表面上，从而改变晶体的振动频率。 频率变化率可以与单体沉积速率直接相关。 该晶体与微控制器和设定点比较器相关联，并且还与蒸发室的加热和冷却元件相关联以在沉积期间有效地监测聚对二甲苯涂层的厚度，并且控制二聚体的汽化速率。

    Parylene polymer layers
    6.
    发明授权
    Parylene polymer layers 失效
    聚对二甲苯聚合物层

    公开(公告)号：US5879808A

    公开(公告)日：1999-03-09

    申请号：US791609

    申请日：1997-01-31

    申请人： John Wary ,  William F. Beach ,  Roger A. Olson

    发明人： John Wary ,  William F. Beach ,  Roger A. Olson

    IPC分类号： B05D3/14 ,  B05D7/24 ,  C08G61/02 ,  H01L23/522 ,  H01L23/532 ,  H01L21/76

    CPC分类号： B05D1/60 ,  B05D1/62 ,  B05D3/145 ,  C08G61/025 ,  H01L23/5222 ,  H01L23/5329 ,  C08G2261/3424 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/31663 ,  Y10T428/31678

    摘要： Multi-level structures including a first layer with a parylene polymer layer deposited thereon. The parylene polymer layer has the structure: ##STR1## m is an integer having a value of 0, 1, 2, 3 or 4, and z is greater than 1. G is a halogen, an alkyl group, a cyclo hydrocarbon, an alkylene group or an alkylyne group having the general formula C.sub.n H.sub.y X.sub.w. X is a halogen, and n is an integer greater than zero. The sum of y and w is at most equal to a 2n+1. The parylene polymer layer can have a zinc impurity level of about 66 parts per billion or less. The parylene polymer layers are formed by a process in which monomers are formed outside of a deposition zone of a vacuum chamber. The monomers may be prepared by a process in which a parylene dimer is vaporized and subsequently pyrolized. The process may further include the step of passing the vapor through a post-pyrolysis zone prior to depositing the monomer on the substrate.

    摘要翻译： 多级结构包括沉积有聚对二甲苯聚合物层的第一层。 聚对二甲苯聚合物层具有如下结构：m是数值为0,1,2,3或4的整数，且z大于1. G是卤素，烷基，环烃， 亚烷基或具有通式C n H y X w的烷基。 X是卤素，n是大于零的整数。 y和w的和最多等于2n + 1。 聚对二甲苯聚合物层可以具有约十六分之一或十六分之一以下的锌杂质水平。 聚对二甲苯聚合物层通过在真空室的沉积区域的外部形成单体的方法形成。 单体可以通过将聚对二甲苯二聚体蒸发并随后热解的方法制备。 该方法还可以包括在将单体沉积在基材上之前使蒸气通过后热解区的步骤。

    Electrets
    9.
    发明授权
    Electrets 失效
    驻极体

    公开(公告)号：US4291244A

    公开(公告)日：1981-09-22

    申请号：US72302

    申请日：1979-09-04

    申请人： William F. Beach ,  Dennis M. Mahoney

    发明人： William F. Beach ,  Dennis M. Mahoney

    IPC分类号： H01G7/02 ,  G11C13/02 ,  H01H1/02

    CPC分类号： H01G7/023 ,  Y10S428/90 ,  Y10S428/913 ,  Y10S428/929 ,  Y10S428/934 ,  Y10S428/938 ,  Y10S55/39 ,  Y10T428/31504 ,  Y10T428/31678 ,  Y10T428/31692 ,  Y10T428/31855

    摘要： A process for preparing polymer electrets comprising the following steps:(a) providing two electrodes in a deposition zone, said electrodes being in a spaced relationship to one another, having opposing surfaces, and being connected to an external voltage source capable of impressing an intense electric field between the opposing surfaces;(b) providing a dipolar substituted p-xylylene monomer vapor in sufficient amount to coat the opposing surfaces of the electrodes;(c) activating the power source; and(d) introducing the vapor from step (b) into the deposition zone, said zone being under vacuum and at a temperature at which the vapor will condense,whereby the vapor condenses on the opposing surfaces of the electrodes, the monomer polymerizing to parylene, coating said surfaces, and forming electrets.

    摘要翻译： 一种制备聚合物驻极体的方法，包括以下步骤：（a）在沉积区域中提供两个电极，所述电极彼此间隔开，具有相对的表面，并且连接到能够强烈施加压力的外部电压源 相对表面之间的电场; （b）提供足够量的偶极取代的对二甲苯单体蒸气以涂覆电极的相对表面; （c）启动电源; 和（d）将来自步骤（b）的蒸汽引入沉积区，所述区域处于真空状态，并且在蒸气冷凝的温度下，蒸气在电极的相对表面上冷凝，单体聚合成聚对二甲苯 ，涂覆所述表面，并形成驻极体。

    Internally heated pyrolysis zone
    10.
    发明授权
    Internally heated pyrolysis zone 失效
    内部加热热解区

    公开(公告)号：US6051276A

    公开(公告)日：2000-04-18

    申请号：US818537

    申请日：1997-03-14

    申请人： John Wary ,  William F. Beach ,  Roger A. Olson

    发明人： John Wary ,  William F. Beach ,  Roger A. Olson

    IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/4557 ,  C23C16/4488 ,  C23C16/452

    摘要： A method and apparatus for more efficiently depositing a gas onto a surface. In one embodiment, a deposition apparatus is provided. The deposition apparatus comprises a deposition chamber, a tube and a heating element. The tube is in fluid communication with the deposition chamber, and the heating element is constructed and arranged so that the heating element preferentially heats the centerline of the tube relative to the inner surface of the tube. In another embodiment, a method of depositing a product gas onto a surface is provided. The method comprises placing a first gas into a tube; heating first and second portions of the first gas to first and second temperatures, respectively, to form the product gas, the first portion of the first gas being adjacent the centerline of the tube, the second portion of the first gas being adjacent the inner surface of the tube, the first temperature being greater than the second temperature; and depositing the product gas onto the surface.

    摘要翻译： 一种用于更有效地将气体沉积到表面上的方法和装置。 在一个实施例中，提供了沉积设备。 沉积设备包括沉积室，管和加热元件。 管与沉积室流体连通，并且加热元件被构造和布置成使得加热元件优先地相对于管的内表面加热管的中心线。 在另一个实施例中，提供了将产物气体沉积到表面上的方法。 该方法包括将第一气体放入管中; 将第一气体的第一和第二部分分别加热到第一和第二温度以形成产物气体，第一气体的第一部分邻近管的中心线，第一气体的第二部分邻近内表面 所述第一温度大于所述第二温度; 并将产物气体沉积到表面上。