公开(公告)号：US06410359B1

公开(公告)日：2002-06-25

申请号：US09817639

申请日：2001-03-26

申请人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

发明人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

IPC分类号： H01L2100

摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

公开(公告)号：US06215165B1

公开(公告)日：2001-04-10

申请号：US09310423

申请日：1999-05-12

申请人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

发明人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

IPC分类号： H01L310232

CPC分类号： H01L31/103 ,  H01L27/1463

摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.