公开(公告)号：US06410359B1

公开(公告)日：2002-06-25

申请号：US09817639

申请日：2001-03-26

申请人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

发明人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

IPC分类号： H01L2100

摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

公开(公告)号：US06215165B1

公开(公告)日：2001-04-10

申请号：US09310423

申请日：1999-05-12

申请人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

发明人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa ,  Joseph W. Parks, Jr. ,  Mark A. Beiley ,  Zong-Fu Li ,  Cory E. Weber ,  Shaofeng Yu

IPC分类号： H01L310232

CPC分类号： H01L31/103 ,  H01L27/1463

摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

公开(公告)号：US6130422A

公开(公告)日：2000-10-10

申请号：US106738

申请日：1998-06-29

申请人： Edward J. Bawolek ,  Robert C. Sundahl ,  Berni W. Landau ,  Stephen B. Gospe ,  Jack S. Uppal ,  Jung S. Kang

发明人： Edward J. Bawolek ,  Robert C. Sundahl ,  Berni W. Landau ,  Stephen B. Gospe ,  Jack S. Uppal ,  Jung S. Kang

IPC分类号： H01L27/146 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/1462 ,  H01L27/14687 ,  H01L27/14689

摘要： The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.

摘要翻译： 本发明是一种图像传感器及其制造方法。 图像传感器包括光电二极管和电介质结构。 光电二极管响应于来自光源的入射光量。 电介质结构位于光电二极管的顶部，放置在光电二极管和层间电介质（ILD）氧化物层之间。 电介质结构包含电介质材料。 ILD氧化物层由氧化物材料制成，具有ILD氧化物厚度。

公开(公告)号：US06403394B2

公开(公告)日：2002-06-11

申请号：US09821561

申请日：2001-03-29

申请人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa

发明人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa

IPC分类号： H01L21329

CPC分类号： H01L31/103 ,  H01L27/1463

摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

摘要翻译： 在沟槽隔离半导体器件中通过在沟槽隔离和有源区之间提供缓冲器可以减少泄漏电流例如，利用沟槽隔离光电二极管，可以在沟槽和形成pn的扩散之间提供相反导电类型的缓冲器 光电二极管的结。

公开(公告)号：US5719085A

公开(公告)日：1998-02-17

申请号：US536694

申请日：1995-09-29

申请人： Peter K. Moon ,  Berni W. Landau ,  David T. Krick

发明人： Peter K. Moon ,  Berni W. Landau ,  David T. Krick

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76235 ,  H01L21/76221 ,  H01L21/76232 ,  Y10S148/05

摘要： A method of forming a trench isolation region. The method of the present invention comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant comprising HF. The opening is then oxidized a second time.

摘要翻译： 一种形成沟槽隔离区域的方法。 本发明的方法包括以下步骤：在半导体衬底中形成开口，第一次氧化开口，然后用包含HF的湿蚀刻剂蚀刻氧化开口。 然后开口第二次被氧化。

公开(公告)号：US06372607B1

公开(公告)日：2002-04-16

申请号：US09343841

申请日：1999-06-30

申请人： Berni W. Landau

发明人： Berni W. Landau

IPC分类号： H01L2176

CPC分类号： H01L31/103

摘要： A circuit that includes an isolation boundary formed to a depth in a substrate defining an active area of the substrate, a primary junction formed in the active area to a primary junction depth in the substrate to collect electron/hole pairs, and a secondary junction formed in the active area adjacent to the isolation boundary to a secondary junction depth at least equal to the isolation boundary depth.

摘要翻译： 一种包括隔离边界的电路，其形成于限定衬底的有源区域的衬底中的深度;形成在有源区中的初级结，到衬底中的初级结深度以收集电子/空穴对，以及形成次级结 在与隔离边界相邻的有源区中至少等于隔离边界深度的次级结深度。

公开(公告)号：US06259145B1

公开(公告)日：2001-07-10

申请号：US09098881

申请日：1998-06-17

申请人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa

发明人： Kevin M. Connolly ,  Jung S. Kang ,  Berni W. Landau ,  James E. Breisch ,  Akira Kakizawa

IPC分类号： H01L27146

CPC分类号： H01L31/103 ,  H01L27/1463

摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

摘要翻译： 在沟槽隔离半导体器件中，通过在沟槽隔离和有源区域之间提供缓冲器可以减少泄漏电流。 例如，使用沟槽隔离光电二极管，可以在沟槽和形成光电二极管的p-n结的扩散之间提供相反导电类型的缓冲器。