Abstract:
An integrated voltage regulator may be provided on the bottom of a ball grid array processor package. This may be done despite the fact that conventionally integrated voltage regulator chips are too thick to fit in the area normally available between the motherboard and the ball grid array package because that area is defined by solder balls of a necessarily limited height which is conventionally believed to be too small to accommodate the integrated voltage regulator.
Abstract:
An image sensing device including an imaging sensor, a package having opposing side portions, and an infrared light selective element coupled to the opposing side portions and overlying a top side portion of the imaging sensor, the selective element including a plastic element and a dye.
Abstract:
The making and use of color microlenses in color image sensors and color display devices is described and claimed. The color microlenses combine the function of a colorless microlens and a color filter into a single structure simplifying the fabrication of, and increasing the reliability of display devices and image sensors using the described color microlenses.
Abstract:
An integrated circuit (IC) package includes a mold compound, a die, and a window. The mold compound has a frame embedded within it. The frame has a coefficient of thermal expansion that is less than the mold compound. The IC package is capable of being attached to a circuit board via a mass reflow process.
Abstract:
By forming a microlens of negative photoresist, economical microlens fabrication processes may be used which, in some embodiments, may achieve microlenses having good optical clarity and high thermal stability. In one embodiment, a positive photoresist may be used as a pattern mask to transfer a pattern to the negative photoresist. The microlenses may be formed by dry etching the positive photoresist which acts as a mask to transfer a pattern to the underlying negative photoresist. At the same time a scratch protection layer may be formed over regions not overlying optical sensors.
Abstract:
An image sensing device including an imaging sensor, a package having opposing side portions, and an infrared light selective element coupled to the opposing side portions and overlying a top side portion of the imaging sensor, the selective element including a plastic element and a dye.
Abstract:
An image sensing device including a package having opposing side portions, an imaging sensor having a top side portion, and a light selective element coupled to the opposing side portions and overlying the top side portion of the imaging sensor.
Abstract:
By forming a microlens of negative photoresist, economical microlens fabrication processes may be used which, in some embodiments, may achieve microlenses having good optical clarity and high thermal stability. In one embodiment, a positive photoresist may be used as a pattern mask to transfer a pattern to the negative photoresist. The microlenses may be formed by dry etching the positive photoresist which acts as a mask to transfer a pattern to the underlying negative photoresist. At the same time a scratch protection layer may be formed over regions not overlying optical sensors.
Abstract:
Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
Abstract:
Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.