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公开(公告)号：US06410359B1
公开(公告)日：2002-06-25
申请号：US09817639
申请日：2001-03-26
申请人： Kevin M. Connolly , Jung S. Kang , Berni W. Landau , James E. Breisch , Akira Kakizawa , Joseph W. Parks, Jr. , Mark A. Beiley , Zong-Fu Li , Cory E. Weber , Shaofeng Yu
发明人： Kevin M. Connolly , Jung S. Kang , Berni W. Landau , James E. Breisch , Akira Kakizawa , Joseph W. Parks, Jr. , Mark A. Beiley , Zong-Fu Li , Cory E. Weber , Shaofeng Yu
IPC分类号： H01L2100
摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
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公开(公告)号：US06215165B1
公开(公告)日：2001-04-10
申请号：US09310423
申请日：1999-05-12
申请人： Kevin M. Connolly , Jung S. Kang , Berni W. Landau , James E. Breisch , Akira Kakizawa , Joseph W. Parks, Jr. , Mark A. Beiley , Zong-Fu Li , Cory E. Weber , Shaofeng Yu
发明人： Kevin M. Connolly , Jung S. Kang , Berni W. Landau , James E. Breisch , Akira Kakizawa , Joseph W. Parks, Jr. , Mark A. Beiley , Zong-Fu Li , Cory E. Weber , Shaofeng Yu
IPC分类号： H01L310232
CPC分类号： H01L31/103 , H01L27/1463
摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
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公开(公告)号：US06259145B1
公开(公告)日：2001-07-10
申请号：US09098881
申请日：1998-06-17
IPC分类号： H01L27146
CPC分类号： H01L31/103 , H01L27/1463
摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
摘要翻译： 在沟槽隔离半导体器件中，通过在沟槽隔离和有源区域之间提供缓冲器可以减少泄漏电流。 例如，使用沟槽隔离光电二极管，可以在沟槽和形成光电二极管的p-n结的扩散之间提供相反导电类型的缓冲器。
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公开(公告)号：US06403394B2
公开(公告)日：2002-06-11
申请号：US09821561
申请日：2001-03-29
IPC分类号： H01L21329
CPC分类号： H01L31/103 , H01L27/1463
摘要： Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
摘要翻译： 在沟槽隔离半导体器件中通过在沟槽隔离和有源区之间提供缓冲器可以减少泄漏电流例如，利用沟槽隔离光电二极管，可以在沟槽和形成pn的扩散之间提供相反导电类型的缓冲器 光电二极管的结。
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公开(公告)号：US6133862A
公开(公告)日：2000-10-17
申请号：US127310
申请日：1998-07-31
申请人： Jon M. Dhuse , Kevin M. Connolly , Mark A. Beiley
发明人： Jon M. Dhuse , Kevin M. Connolly , Mark A. Beiley
摘要： What is disclosed is an apparatus for reducing row reset noise in photodiode based complementary metal oxide (CMOS) sensors. The apparatus uses at least one reference pixel for each row of pixels in a sensor array. Also, a reset noise elimination unit is provided to adjust the values received from the pixels in a particular row by an adjustment value determined from the reset values received from the reference pixels. Additionally, a method of using the apparatus is disclosed. The method has a step of providing a first reset signal to a row of pixels including the reference pixels. The method also reads out a first set of values from this row after integration. The method continues with providing a second reset signal to the row and a second set of values is read from the row. An adjustment value is calculated from the difference of the values which are read out from the reference pixels.
摘要翻译： 公开的是用于减少基于光电二极管的互补金属氧化物（CMOS）传感器中的行复位噪声的装置。 该装置对传感器阵列中的每行像素使用至少一个参考像素。 此外，提供复位噪声消除单元，用于根据从参考像素接收的复位值确定的调整值来调整从特定行中的像素接收的值。 另外，公开了一种使用该装置的方法。 该方法具有向包括参考像素的像素行提供第一复位信号的步骤。 该方法还从集成后的第一行中读出第一组值。 该方法继续向该行提供第二复位信号，并且从该行读取第二组值。 根据从参考像素读出的值的差来计算调整值。
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6.发明授权公开(公告)号：US06438276B1
公开(公告)日：2002-08-20
申请号：US09659159
申请日：2000-09-11
申请人： Jon M. Dhuse , Kevin M. Connolly , Mark A. Beiley
发明人： Jon M. Dhuse , Kevin M. Connolly , Mark A. Beiley
IPC分类号： G06K920
摘要： What is disclosed is an apparatus for reducing row reset noise in photodiode based complementary metal oxide (CMOS) sensors. The apparatus uses at least one reference pixel for each row of pixels in a sensor array. Also, a reset noise elimination unit is provided to adjust the values received from the pixels in a particular row by an adjustment value determined from the reset values received from the reference pixels. Additionally, a method of using the apparatus is disclosed. The method has a step of providing a first reset signal to a row of pixels including the reference pixels. The method also reads out a first set of values from this row after integration. The method continues with providing a second reset signal to the row and a second set of values is read from the row. An adjustment value is calculated from the difference of the values which are read out from the reference pixels.
摘要翻译： 公开的是用于减少基于光电二极管的互补金属氧化物（CMOS）传感器中的行复位噪声的装置。 该装置对传感器阵列中的每行像素使用至少一个参考像素。 此外，提供复位噪声消除单元，用于根据从参考像素接收的复位值确定的调整值来调整从特定行中的像素接收的值。 另外，公开了一种使用该装置的方法。 该方法具有向包括参考像素的像素行提供第一复位信号的步骤。 该方法还从集成后的第一行中读出第一组值。 该方法继续向该行提供第二复位信号，并且从该行读取第二组值。 根据从参考像素读出的值的差来计算调整值。
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公开(公告)号：US06697112B2
公开(公告)日：2004-02-24
申请号：US09193961
申请日：1998-11-18
IPC分类号： H04N314
CPC分类号： H04N5/35518 , H04N5/235 , H04N5/343 , H04N5/3745
摘要： An imaging system includes an array of pixel sensors and a mode control circuit. The array of pixel sensors is adapted to furnish logarithmically encoded indications of light intensities during a first mode and furnish linearly encoded indications of the light intensities during a second mode. The mode control circuit is adapted to selectively place the array in one of the first and second modes. The imaging system may include more than one array, and the mode control circuit may configure one of the arrays. The imaging system may include a camera, for example, that includes the array(s) and mode control circuit.
摘要翻译： 成像系统包括像素传感器阵列和模式控制电路。 像素传感器阵列适于在第一模式期间提供对数编码的光强度的指示，并且在第二模式期间提供光强度的线性编码指示。 模式控制电路适于选择性地将阵列置于第一和第二模式之一中。 成像系统可以包括不止一个阵列，并且模式控制电路可以配置阵列之一。 成像系统可以包括例如包括阵列和模式控制电路的照相机。
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公开(公告)号：US07098952B2
公开(公告)日：2006-08-29
申请号：US09106994
申请日：1998-06-29
CPC分类号： H01L27/14609 , H01L27/14643 , H04N5/374 , H04N5/37452 , H04N9/045
摘要： An imager includes an array of pixel sensors. Each pixel sensor indicates at least two different primary color components of an image. For each pixel sensor, at least two storage locations are located in the array and store the indications from the pixel sensor.
摘要翻译： 成像器包括一系列像素传感器。 每个像素传感器指示图像的至少两个不同的原色分量。 对于每个像素传感器，至少两个存储位置位于阵列中并存储来自像素传感器的指示。
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9.发明授权Method of fabricating image sensors using a thin film photodiode above active CMOS circuitry 有权使用有源CMOS电路上的薄膜光电二极管制造图像传感器的方法公开(公告)号：US06709885B2
公开(公告)日：2004-03-23
申请号：US10280253
申请日：2002-10-25
IPC分类号： H01L2100
CPC分类号： H01L27/14643 , H01L27/14665
摘要： A method of fabricating an image sensor having pin photodiodes residing vertically atop underlying CMOS control circuitry. In the preferred technique, pin photodiodes fabricated in amorphous silicon are utilized.
摘要翻译： 一种制造具有垂直位于底层CMOS控制电路上的引脚光电二极管的图像传感器的方法。 在优选的技术中，使用在非晶硅中制造的pin光电二极管。
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10.发明授权公开(公告)号：US06501065B1
公开(公告)日：2002-12-31
申请号：US09474177
申请日：1999-12-29
IPC分类号： H01L3100
CPC分类号： H01L27/14643 , H01L27/14665
摘要： An image sensor having pin photodiodes residing vertically atop underlying CMOS control circuitry. In the preferred technique, pin photodiodes fabricated in amorphous silicon are utilized.
摘要翻译： 具有垂直位于底层CMOS控制电路上的引脚光电二极管的图像传感器。 在优选的技术中，使用在非晶硅中制造的pin光电二极管。
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