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    METHOD OF CLASSIFYING DEFECTS
    1.
    发明申请
    METHOD OF CLASSIFYING DEFECTS 有权
    分类缺陷的方法

    公开(公告)号：US20070041609A1

    公开(公告)日：2007-02-22

    申请号：US11421019

    申请日：2006-05-30

    申请人： Ki-Suk CHUNG ,  Chung-Sam JUN ,  Yu-Sin YANG ,  Byung-Sug LEE ,  Ji-Young SHIN ,  Tae-Sung KIM

    发明人： Ki-Suk CHUNG ,  Chung-Sam JUN ,  Yu-Sin YANG ,  Byung-Sug LEE ,  Ji-Young SHIN ,  Tae-Sung KIM

    IPC分类号： G06K9/00

    CPC分类号： G06T7/0004

    摘要： A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.

    摘要翻译： 对物体的缺陷进行分类的方法包括将多波长光照射到物体上，将从物体反射的光分成光束，每个光束具有不同的波长，基于每个光束获得物体的图像信息 ，形成表示波长和图像信息的特征矩阵，并且分析特征矩阵以确定对象上的缺陷的类型。 因此，可以使用根据波长的变化和检查条件的每个缺陷的反应性之间的差异来精确地分类缺陷。

    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE
    3.
    发明申请
    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
    检测半导体器件缺陷的装置和方法

    公开(公告)号：US20120080597A1

    公开(公告)日：2012-04-05

    申请号：US13226757

    申请日：2011-09-07

    申请人： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

    发明人： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

    IPC分类号： G01N23/22

    CPC分类号： H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

    摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

    摘要翻译： 检查基板缺陷的装置和方法。 由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到 改善用于检查下层缺陷的图案图像。 可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。 可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。 关于图像的扫描信息可以与基板上的位置信息一起存储。 可以计算关于图案图像的每个扫描信息以生成新的集成图像。

    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE
    4.
    发明申请
    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
    检测半导体器件缺陷的装置和方法

    公开(公告)号：US20100136717A1

    公开(公告)日：2010-06-03

    申请号：US12627222

    申请日：2009-11-30

    申请人： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An KIM ,  Hyung-Suk CHO ,  Yu-Sin YANG

    发明人： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An KIM ,  Hyung-Suk CHO ,  Yu-Sin YANG

    IPC分类号： H01L21/66 ,  G01N23/00 ,  G06F19/00

    CPC分类号： H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

    摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.

    摘要翻译： 一种用于检查半导体器件的缺陷的装置和方法。 由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。 从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。 由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像 在下层。 为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。 因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。 关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。 当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。