公开(公告)号：US08546154B2

公开(公告)日：2013-10-01

申请号：US13226757

申请日：2011-09-07

申请人： Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

发明人： Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

IPC分类号： G01R31/36 ,  H01L21/66

CPC分类号： H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

摘要翻译： 检查基板缺陷的装置和方法。 由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到 改善用于检查下层缺陷的图案图像。 可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。 可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。 关于图像的扫描信息可以与基板上的位置信息一起存储。 可以计算关于图案图像的每个扫描信息以生成新的集成图像。

公开(公告)号：US20100219340A1

公开(公告)日：2010-09-02

申请号：US12713261

申请日：2010-02-26

申请人： Young-Seok KIM ,  Jong-Sun PEAK ,  Young-Nam KIM ,  Hyung-Suk CHO ,  Sun-Jin KANG ,  Bu-Dl YOO

发明人： Young-Seok KIM ,  Jong-Sun PEAK ,  Young-Nam KIM ,  Hyung-Suk CHO ,  Sun-Jin KANG ,  Bu-Dl YOO

IPC分类号： G01N23/20

CPC分类号： H01L22/20 ,  H01L22/12

摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.

摘要翻译： 提供了一种用于测量半导体器件的设备。 该装置包括：射束发射器，被配置为将电子束照射到具有通过蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器 电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围， 到电子束的波长。 还提供了使用测量装置测量半导体器件的方法。 因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。

公开(公告)号：US08034640B2

公开(公告)日：2011-10-11

申请号：US12627222

申请日：2009-11-30

申请人： Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

发明人： Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.

摘要翻译： 一种用于检查半导体器件的缺陷的装置和方法。 由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。 从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。 由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像 在下层。 为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。 因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。 关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。 当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

公开(公告)号：US20070025609A1

公开(公告)日：2007-02-01

申请号：US11460574

申请日：2006-07-27

申请人： Sung-Gon RYU ,  Kyu-Hong LIM ,  Hyung-Suk CHO ,  Sung-Kweon KIM

发明人： Sung-Gon RYU ,  Kyu-Hong LIM ,  Hyung-Suk CHO ,  Sung-Kweon KIM

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G01N21/8422 ,  G01N21/95607 ,  G01N21/95684 ,  G06T2207/30148

摘要： In a method of detecting a defect of the pattern in a semiconductor device, the pattern to be inspected is formed on a substrate, and then a thin film is continuously formed on the pattern, the defect of the pattern and the substrate to accurately detect the defect. The thin film has a reflectivity substantially greater than that of the pattern. The defect of the pattern is detected by inspecting the substrate having the thin film covering the pattern and the defect. A minute defect of the pattern such as residues or a micro bridge may be readily detected.

摘要翻译： 在检测半导体器件中的图案的缺陷的方法中，将要检查的图案形成在基板上，然后在图案上连续地形成薄膜，图案的缺陷和基板，以精确地检测 缺陷。 薄膜的反射率显着大于图案的反射率。 通过检查具有覆盖图案和缺陷的薄膜的基板来检测图案的缺陷。 可以容易地检测到诸如残留物或微桥的图案的微小缺陷。

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： H01L2166

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

公开(公告)号：US06462141B1

公开(公告)日：2002-10-08

申请号：US09460643

申请日：1999-12-15

申请人： Eun-Kyoung Kim ,  Hyung-Suk Cho ,  Young-Pil Kim

发明人： Eun-Kyoung Kim ,  Hyung-Suk Cho ,  Young-Pil Kim

IPC分类号： C08F800

CPC分类号： C08F8/42 ,  C08C19/25

摘要： The present invention relates to alkoxysilane-substituted diene copolymers, organic and inorganic hybrid complex compositions comprising the same and a process for the preparation of the same. The alkoxysilane-substituted diene copolymers are prepared by reacting a diene copolymer substituted by epoxy or hydroxy groups with a silane compound. Thus prepared alkoxysilane-substituted diene copolymer is characterized by the facts that it is in organic solvents and it is capable of being cured at low temperatures. The present invention also relates to a composition prepared by mixing the said copolymer with inorganic fillers and/or coupling agents. The copolymer of the formula (1) has high reactivity with coupling agents since it possesses reactive silane groups and thus provides the diene polymer composition as having improved compatibility with inorganic fillers. In addition, when the copolymer of the formula (1) is added to a sol-gel reactant, a substitution reaction proceeds smoothly even under mild reaction conditions and thus it is possible to introduce the third functional group to copolymer blocks.

摘要翻译： 本发明涉及烷氧基硅烷取代的二烯共聚物，包含它们的有机和无机杂化复合组合物及其制备方法。 烷氧基硅烷取代的二烯共聚物通过使被环氧基或羟基取代的二烯共聚物与硅烷化合物反应来制备。 由此制备的烷氧基硅烷取代的二烯共聚物的特征在于它在有机溶剂中并且能够在低温下固化。 本发明还涉及通过将所述共聚物与无机填料和/或偶联剂混合而制备的组合物。 式（1）的共聚物与偶联剂具有高反应性，因为它具有反应性硅烷基团，因此提供二烯聚合物组合物具有改善的与无机填料的相容性。 此外，当将式（1）的共聚物加入到溶胶 - 凝胶反应物中时，即使在温和的反应条件下，取代反应也能顺利进行，因此可以将第三官能团引入共聚物嵌段。

公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： G01N2100

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

摘要翻译： 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US06440760B1

公开(公告)日：2002-08-27

申请号：US09663644

申请日：2000-09-18

申请人： Hyung-suk Cho ,  Sang-mun Chon ,  Sang-bong Choi ,  Chung-sam Chun ,  Min-sub Kang

发明人： Hyung-suk Cho ,  Sang-mun Chon ,  Sang-bong Choi ,  Chung-sam Chun ,  Min-sub Kang

IPC分类号： G01R3126

CPC分类号： G01N21/55

摘要： Embodiments of the present invention include methods for measuring a semiconductor wafer which has been subjected to an etching process. Light is radiated at the semiconductor wafer. Light within a selected wavelength band reflected from the semiconductor wafer is measured to provide an output value. A ratio of the output value and a reference value is determined. The reference value may be based on light within the selected wavelength band reflected from a reference surface, such as a bare silicon reference surface. It is determined that the semiconductor wafer is under-etched if the determined ratio does not meet the reference value. A normalized optical impedance or a polarization ratio may be measured based on light within a selected wave length band reflected from the semiconductor wafer to provide the output value in various embodiments of the present invention. In further aspects of the present invention, a thickness of a remaining oxide layer is determined using an under-etch recipe when it is determined that a semiconductor wafer is under-etched and a thickness of a damaged/polymer layer may be determined using an over-etch recipe when it is determined that the semiconductor wafer is over-etched.

摘要翻译： 本发明的实施例包括用于测量经过蚀刻处理的半导体晶片的方法。 光在半导体晶片上被辐射。 测量从半导体晶片反射的选定波长带内的光以提供输出值。 确定输出值和参考值的比率。 参考值可以基于从诸如裸硅参考表面的参考表面反射的所选波长带内的光。 如果确定的比率不符合参考值，则确定半导体晶片被蚀刻。 可以基于从半导体晶片反射的所选波长带内的光来测量归一化的光阻抗或偏振比，以在本发明的各种实施例中提供输出值。 在本发明的另外的方面，当确定半导体晶片被低蚀刻并且可以使用过度蚀刻确定损坏/聚合物层的厚度时，使用蚀刻下配方确定剩余氧化物层的厚度 当确定半导体晶片被过蚀刻时，读取配方。

公开(公告)号：US08324571B2

公开(公告)日：2012-12-04

申请号：US12713261

申请日：2010-02-26

申请人： Young-Seok Kim ,  Jong-Sun Peak ,  Young-Nam Kim ,  Hyung-Suk Cho ,  Sun-Jin Kang ,  Bu-Dl Yoo

发明人： Young-Seok Kim ,  Jong-Sun Peak ,  Young-Nam Kim ,  Hyung-Suk Cho ,  Sun-Jin Kang ,  Bu-Dl Yoo

IPC分类号： G01N23/20

CPC分类号： H01L22/20 ,  H01L22/12

摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.

摘要翻译： 提供了一种用于测量半导体器件的设备。 该装置包括：射束发射器，被配置为将电子束照射到具有由蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器 电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围， 到电子束的波长。 还提供了使用测量装置测量半导体器件的方法。 因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。

公开(公告)号：US20120080597A1

公开(公告)日：2012-04-05

申请号：US13226757

申请日：2011-09-07

申请人： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

发明人： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

IPC分类号： G01N23/22

CPC分类号： H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

摘要： An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

摘要翻译： 检查基板缺陷的装置和方法。 由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到 改善用于检查下层缺陷的图案图像。 可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。 可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。 关于图像的扫描信息可以与基板上的位置信息一起存储。 可以计算关于图案图像的每个扫描信息以生成新的集成图像。