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    Ion implanter and method of controlling the same
    4.
    发明授权
    Ion implanter and method of controlling the same 有权
    离子注入机及其控制方法

    公开(公告)号：US09564289B2

    公开(公告)日：2017-02-07

    申请号：US14793265

    申请日：2015-07-07

    Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

    Inventor： Tadanobu Kagawa ,  Toshio Yumiyama ,  Takeshi Kurose

    IPC: H01J37/317 ,  H01J37/24

    CPC classification number: H01J37/241 ,  H01J37/3171

    Abstract: An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.

    Abstract translation: 离子注入机包括高压电源，产生控制高电压电源的输出电压的指令信号的控制单元，施加输出电压的电极单元和测量实际的测量单元 施加到电极单元的电压。 控制单元包括：第一生成部，其生成用于使高压电源输出目标电压的第一指令信号;第二生成部，生成用于补充第一指令信号的第二指令信号，使得测量的实际电压 通过测量单元变得或接近目标电压，以及命令部分，其通过合成第一命令信号和第二命令信号而产生合成命令信号给高压电源。

    ION ENERGY BIAS CONTROL APPARATUS
    5.
    发明申请
    ION ENERGY BIAS CONTROL APPARATUS 审中-公开
    离子能量偏差控制装置

    公开(公告)号：US20160020072A1

    公开(公告)日：2016-01-21

    申请号：US14803815

    申请日：2015-07-20

    Applicant: Advanced Energy Industries, Inc.

    Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter ,  Dmitri Kovalevskii

    IPC: H01J37/32 ,  H01J37/24

    CPC classification number: H01J37/32091 ,  H01J37/241 ,  H01J37/32146

    Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

    Abstract translation: 本公开描述了用于操作等离子体处理室的系统，方法和装置。 特别地，可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压，该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量，而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。

    RF impedance matching network
    6.
    发明授权
    RF impedance matching network 有权
    射频阻抗匹配网络

    公开(公告)号：US09196459B2

    公开(公告)日：2015-11-24

    申请号：US14669568

    申请日：2015-03-26

    Applicant: Reno Technologies, Inc.

    Inventor： Imran Ahmed Bhutta

    IPC: H05H1/46 ,  C23C16/00 ,  H01J37/32 ,  H01J37/248 ,  H01J37/24 ,  H01J37/244 ,  H01L21/67

    CPC classification number: H01J37/32183 ,  H01J37/241 ,  H01J37/244 ,  H01J37/248 ,  H01L21/67253 ,  H03H7/40 ,  H03H11/30

    Abstract: An RF impedance matching network includes an RF input; an RF output configured to operably couple to a plasma chamber; a series electronically variable capacitor (“series EVC”), the series EVC electrically coupled in series between the RF input and the RF output; and a shunt electronically variable capacitor (“shunt EVC”), the shunt EVC electrically coupled in parallel between a ground and one of the RF input and the RF output; a control circuit to control the series variable capacitance and the shunt variable capacitance, wherein the control circuit is configured to determine the variable plasma impedance of the plasma chamber, determine a series capacitance value and a shunt capacitance value, and generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance; wherein the alteration is caused by at least one of a plurality of switching circuits.

    Abstract translation: RF阻抗匹配网络包括RF输入; 被配置为可操作地耦合到等离子体室的RF输出; 串联电可变电容器（“EVC”系列），串联EVC串联在RF输入和RF输出之间; 和分流电可变电容器（“并联EVC”），并联电气并联在地与RF输入和RF输出中的一个之间的并联EVC; 用于控制串联可变电容和分流可变电容的控制电路，其中控制电路被配置为确定等离子体室的可变等离子体阻抗，确定串联电容值和并联电容值，并产生控制信号以改变 串联可变电容和分流可变电容中的至少一个; 其中所述改变由多个开关电路中的至少一个引起。

    HAND-HELD DEVICE AND METHOD OF PLASMA TREATMENT OF A WORKPIECE WITH THE HAND-HELD DEVICE
    7.
    发明申请
    HAND-HELD DEVICE AND METHOD OF PLASMA TREATMENT OF A WORKPIECE WITH THE HAND-HELD DEVICE 审中-公开
    手持式装置的手持式处理方法和手持式装置的工件的等离子体处理方法

    公开(公告)号：US20150069911A1

    公开(公告)日：2015-03-12

    申请号：US14480852

    申请日：2014-09-09

    Applicant: Reinhausen Plasma GmbH

    Inventor： Stefan Nettesheim ,  Klaus Forster ,  Arif Demirci

    IPC: H01J37/244 ,  H01J37/24 ,  H01J37/32 ,  H01J37/22 ,  G01J5/02 ,  G01F1/00

    CPC classification number: H01J37/244 ,  A61B18/042 ,  B23K10/00 ,  B23K10/006 ,  B23K37/006 ,  F16P3/14 ,  F16P3/18 ,  G01F1/00 ,  G01J5/02 ,  H01J37/226 ,  H01J37/241 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32908 ,  H05H1/36 ,  H05H2001/3494 ,  H05H2001/4645 ,  H05H2245/125

    Abstract: A hand-held device and a method for plasma treatment of workpieces. The hand-held device comprises a housing for receiving a plasma source supplied with a gas stream from a gas supply unit. Further, an electrode unit is arranged in the plasma source and connected via an electrical line with a voltage source so that a plasma stream can be produced. The plasma stream can be directed through a nozzle of the housing onto a workpiece. The hand-held device comprises a sensor system for the collection of operating parameters which includes at least one operator sensor device for collecting a position of an operator relative to the plasma source and at least one pressure sensor for the collection of a pressure in the gas supply unit. Means of the hand-held device is communicatively connected with the sensor system for detecting the collected operating parameter via control data lines.

    Abstract translation: 一种用于等离子体处理工件的手持装置和方法。 手持装置包括用于接收从气体供应单元供应气体流的等离子体源的壳体。 此外，电极单元布置在等离子体源中并且经由电线与电压源连接，使得可以产生等离子体流。 等离子体流可以通过壳体的喷嘴引导到工件上。 手持装置包括用于收集操作参数的传感器系统，其包括用于收集操作者相对于等离子体源的位置的至少一个操作者传感器装置和用于收集气体中的压力的​​至少一个压力传感器 供应单位。 手持装置的手段与传感器系统通信连接，用于经由控制数据线检测收集的操作参数。

    VARIABLE ENERGY CHARGED PARTICLE SYSTEMS
    8.
    发明申请
    VARIABLE ENERGY CHARGED PARTICLE SYSTEMS 有权
    可变能量充电粒子系统

    公开(公告)号：US20120138815A1

    公开(公告)日：2012-06-07

    申请号：US13328326

    申请日：2011-12-16

    Applicant: Raymond Hill ,  John Notte, IV

    Inventor： Raymond Hill ,  John Notte, IV

    IPC: H01J27/02

    CPC classification number: H01J37/26 ,  H01J37/06 ,  H01J37/08 ,  H01J37/241 ,  H01J37/243 ,  H01J2237/08 ,  H01J2237/24564

    Abstract: Charged particle system are disclosed and include a first voltage source, a second voltage source electrically isolated from the first voltage source, a charged particle source electrically connected to the first voltage source, and an extractor electrically connected to the second voltage source. Methods relating to the charged particle systems are also disclosed.

    Abstract translation: 公开了带电粒子系统，并且包括第一电压源，与第一电压源电隔离的第二电压源，电连接到第一电压源的带电粒子源，以及电连接到第二电压源的提取器。 还公开了与带电粒子系统有关的方法。

    Dual mode gas field ion source
    9.
    发明授权
    Dual mode gas field ion source 有权
    双模气体离子源

    公开(公告)号：US07968855B2

    公开(公告)日：2011-06-28

    申请号：US12366390

    申请日：2009-02-05

    Applicant: Juergen Frosien

    Inventor： Juergen Frosien

    IPC: H01J27/02

    CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/241 ,  H01J37/243 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/0827 ,  H01J2237/28 ,  H01J2237/317

    Abstract: A focused ion beam device is described. The focused ion beam device includes an ion beam column including an enclosure for housing a gas field ion source emitter with an emitter area for generating ions, an electrode for extracting ions from the gas field ion source emitter, one or more gas inlets adapted to introduce a first gas and a second gas to the emitter area, an objective lens for focusing the ion beam generated from the first gas or the second gas, a voltage supply for providing a voltage between the electrode and the gas field ion source emitter, and a controller for switching between a first voltage and a second voltage of the voltage supply for generating an ion beam of ions of the first gas or an ion beam of ions of the second gas.

    Abstract translation: 描述了聚焦离子束装置。 聚焦离子束装置包括离子束柱，其包括用于容纳具有用于产生离子的发射极区域的气体场离子源发射器的外壳，用于从气体离子源发射器提取离子的电极，适于引入离子源的一个或多个气体入口 将第一气体和第二气体输送到发射器区域，用于聚焦由第一气体或第二气体产生的离子束的物镜，用于在电极和气体离子源发射器之间提供电压的电压源，以及 控制器，用于在电压源的第一电压和第二电压之间切换，用于产生第一气体的离子离子束或第二气体的离子离子束。

    Power sag detection and control in ion implanting system
    10.
    发明授权
    Power sag detection and control in ion implanting system 失效
    离子注入系统中的功率下垂检测与控制

    公开(公告)号：US07067829B2

    公开(公告)日：2006-06-27

    申请号：US10995836

    申请日：2004-11-23

    Applicant: Steven Richards ,  Julian G. Blake ,  Steven Campbell

    Inventor： Steven Richards ,  Julian G. Blake ,  Steven Campbell

    IPC: H01J37/317

    CPC classification number: H01J37/241 ,  H01J37/304 ,  H01J2237/0203

    Abstract: In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

    Abstract translation: 一方面，本发明提供了一种管理提供给半导体处理装置的功率波动的方法，该方法包括监视提供给该装置的功率，以检测半导体处理会话期间发生功率波动事件。 在检测到功率波动事件时，可以中断半导体处理。 在功率波动事件结束之后，可以测量设备的至少一个操作参数，例如真空处理室中的真空度，并且当测量的操作参数在可接受的范围内时，可以恢复半导体处理。 测量的操作参数可以优选地包括当受到功率波动事件的不利影响时，比其他参数恢复得更慢的参数。

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