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公开(公告)号:US20120199970A1
公开(公告)日:2012-08-09
申请号:US13361088
申请日:2012-01-30
申请人: Ki-Young Yun , Yeong-Lyeol PARK , Ki-Soon BAE , Woon-Seob LEE , Sung-Dong CHO , Sin-Woo KANG , Sang-Wook JI , Eun-Ji KIM
发明人: Ki-Young Yun , Yeong-Lyeol PARK , Ki-Soon BAE , Woon-Seob LEE , Sung-Dong CHO , Sin-Woo KANG , Sang-Wook JI , Eun-Ji KIM
IPC分类号: H01L23/498 , H01L21/768
CPC分类号: H01L23/5226 , H01L21/76816 , H01L21/76898 , H01L23/481 , H01L2224/13025 , H01L2224/16146
摘要: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.
摘要翻译: 半导体器件包括具有通孔区域和电路区域的衬底,形成在衬底顶表面上的绝缘夹层,具有第一表面和第二表面的通孔,其中贯穿电极穿透衬底的通孔区域 并且所述第二表面与所述基板的底面基本共面;形成在所述贯通电极的第一表面的一部分上的第一上布线,形成在所述第一上布线的顶表面的一部分上的多个通孔接头 以及形成在所述多个通孔接触件上的第二上部布线。